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A power tap device for use in a fuel cell stack having a plurality of stackable items including separator plates, and membrane electrode assemblies each having an anode and cathode and configured to be respectively stacked between pairs of separator plates, comprises first and second major outer sur

A power tap device for use in a fuel cell stack having a plurality of stackable items including separator plates, and membrane electrode assemblies each having an anode and cathode and configured to be respectively stacked between pairs of separator plates, comprises first and second major outer surfaces, the first major outer surface being electrically conductive, the second major outer surface being electrically conductive; and a dielectric separating the first major outer surface from the second major outer surface, wherein the power tap device is sized and arranged to be interposed between stackable items in the stack.

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A power tap device for use in a fuel cell stack having a plurality of stackable items including separator plates, and membrane electrode assemblies each having an anode and cathode and configured to be respectively stacked between pairs of separator plates, comprises first and second major outer sur

A power tap device for use in a fuel cell stack having a plurality of stackable items including separator plates, and membrane electrode assemblies each having an anode and cathode and configured to be respectively stacked between pairs of separator plates, comprises first and second major outer surfaces, the first major outer surface being electrically conductive, the second major outer surface being electrically conductive; and a dielectric separating the first major outer surface from the second major outer surface, wherein the power tap device is sized and arranged to be interposed between stackable items in the stack. ray and Meyer, "Analysis and Design of Analog Integrated Circuits", John Wiley & Sons, 1984, pp. 605-632. Grutzmacher et al., "Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere," Applied Physics Letters, vol. 63, No. 18 (Nov. 1, 1993) pp. 2531-2533. Hackbrath et al., "Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors," Journal of Crystal Growth, vol. 201/202 (1999) pp. 734-738. Herzog et al., "SiGe-based FETs: buffer issues and device results," Thin Solid Films, vol. 380 (2000) pp. 36-41. Hock et al., "Carrier mobilities in modulation doped Sil-xGex heterostructures with respect to FET applications," Thin Solid Films, vol. 336 (1998)