초록 ▼

A device and method are disclosed for capturing an electronic image signal from the interaction of light with features of, on, or near a media surface. In addition to signature marks, these features can include characters, character strings, symbols, icons, dot pitches, line types, line and characte

A device and method are disclosed for capturing an electronic image signal from the interaction of light with features of, on, or near a media surface. In addition to signature marks, these features can include characters, character strings, symbols, icons, dot pitches, line types, line and character formats, optical densities, color, indentations, texture, and patterns. More specifically, the claimed invention is useful primarily for optically capturing, processing, parameterizing, and identifying hand written signatures, but may also be applied to identification of other surface features such as print, line art, graphics embossments, textures or colors. The signals are captured, processed, sometimes parameterized, and used to make associations with an identifying name. These associations can be given a statistical probability of correctness.

대표청구항 ▼

A device and method are disclosed for capturing an electronic image signal from the interaction of light with features of, on, or near a media surface. In addition to signature marks, these features can include characters, character strings, symbols, icons, dot pitches, line types, line and characte

A device and method are disclosed for capturing an electronic image signal from the interaction of light with features of, on, or near a media surface. In addition to signature marks, these features can include characters, character strings, symbols, icons, dot pitches, line types, line and character formats, optical densities, color, indentations, texture, and patterns. More specifically, the claimed invention is useful primarily for optically capturing, processing, parameterizing, and identifying hand written signatures, but may also be applied to identification of other surface features such as print, line art, graphics embossments, textures or colors. The signals are captured, processed, sometimes parameterized, and used to make associations with an identifying name. These associations can be given a statistical probability of correctness. antation system of claim 4, wherein the microwave electric fields and the multi-cusped magnetic fields provide containment of the ion beam at least in the portion of the beamguide passageway passing through the mass analyzer. 6. The ion implantation system of claim 5, wherein the microwave electric fields and the multi-cusped magnetic fields provide an electron cyclotron resonance condition along at least a portion of the passageway. 7. The ion implantation system of claim 6, wherein the beamguide operates as a waveguide to support the microwave electric fields in the beamguide passageway. 8. The ion implantation system of claim 7, wherein the beamguide comprises a top wall, a bottom wall, and first and second opposite side walls, wherein the top, bottom, and side walls extend from an entrance end proximate the ion source to an exit end proximate the end station to define the beamguide passageway along the path, and wherein the beamguide supports a traveling wave propagating along the beamguide in a direction toward the end station. 9. The ion implantation system of claim 8, wherein the beamguide comprises: a feed port located along one of the top, bottom, and side walls between the entrance and exit ends of the beamguide; and a microwave coupler connected to the feed port to couple microwave power from the power source to the beamguide for exciting a single microwave mode or multiple microwave modes as a traveling wave along the beamguide. 10. The ion implantation system of claim 9, wherein the beamguide comprises an entrance wall near the entrance end of the beamguide, the entrance wall comprising an entrance aperture along the path through which the ion beam passes, and wherein the entrance wall operates as a cutoff for the microwave mode or modes to create a reflected wave propagating along the beamguide in the direction toward the end station. 11. The ion implantation system of claim 10, wherein the feed port is located between the entrance and exit ends of the beamguide and spaced from the entrance wall by a distance such that the reflected wave and an incoming wave from the feed port are generally in phase to provide the traveling wave propagating along the beamguide in the direction toward the end station. 12. The ion implantation system of claim 1, wherein the beamline assembly comprises a mass analyzer through which at least a portion of the beamguide passes, the mass analyzer being adapted to receive the ion beam from the ion source and to direct ions of a desired charge-to-mass ratio along the path toward the end station. 13. The ion implantation system of claim 1, wherein the microwave electric fields and the multi-cusped magnetic fields provide an electron cyclotron resonance condition along at least a portion of the passageway. 14. The ion implantation system of claim 1, wherein the beamguide operates as a waveguide to support the microwave electric fields in the beamguide passageway. 15. The ion implantation system of claim 14, wherein the beamguide comprises a top wall, a bottom wall, and first and second opposite side walls, wherein the top, bottom, and side walls extend from an entrance end proximate the ion source to an exit end proximate the end station to define the beamguide passageway along the path, and wherein the beamguide supports a traveling wave propagating along the beamguide in a direction toward the end station. 16. The ion implantation system of claim 15, wherein the beamguide comprises: a feed port located along one of the top, bottom, and side walls between the entrance and exit ends of the beamguide; and a microwave coupler connected to the feed port to couple microwave power from the power source to the beamguide for exciting a single microwave mode or multiple microwave modes as a traveling wave along the beamguide. 17. The ion implantation system of claim 16, wherein the beamguide comprises an entrance wall near the entrance end of the beamguide, the entrance wall comprising