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A RF communications system and method having improved RF interference characteristics for use with at least a pair of RF transceivers which communicate using a packet transfer protocol, in a frequency hopping scheme, wherein the packets may be of various lengths, wherein each frequency occupies a fr

A RF communications system and method having improved RF interference characteristics for use with at least a pair of RF transceivers which communicate using a packet transfer protocol, in a frequency hopping scheme, wherein the packets may be of various lengths, wherein each frequency occupies a frequency channel slot in a RF band, and wherein a subsequent frequency is known, including, in at least one of the transceivers: a detector for detecting distressed channel frequencies having an unacceptable level of interference thereon; a tracker for keeping track of the distressed channel frequencies and of channel frequencies which are not distressed; a look-ahead mechanism for maintaining a list of bad channel frequencies of future slots; a scheduling algorithm to avoid beginning packet transmission on bad channel frequency slots; and a frequency selector for selecting a next transmission frequency from the available non-distressed channel frequencies.

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A RF communications system and method having improved RF interference characteristics for use with at least a pair of RF transceivers which communicate using a packet transfer protocol, in a frequency hopping scheme, wherein the packets may be of various lengths, wherein each frequency occupies a fr

A RF communications system and method having improved RF interference characteristics for use with at least a pair of RF transceivers which communicate using a packet transfer protocol, in a frequency hopping scheme, wherein the packets may be of various lengths, wherein each frequency occupies a frequency channel slot in a RF band, and wherein a subsequent frequency is known, including, in at least one of the transceivers: a detector for detecting distressed channel frequencies having an unacceptable level of interference thereon; a tracker for keeping track of the distressed channel frequencies and of channel frequencies which are not distressed; a look-ahead mechanism for maintaining a list of bad channel frequencies of future slots; a scheduling algorithm to avoid beginning packet transmission on bad channel frequency slots; and a frequency selector for selecting a next transmission frequency from the available non-distressed channel frequencies. bstrate being controlled in accordance with the output signal of the second portion of said light detector to control the light intensity of said semiconductor laser diode. 4. The semiconductor laser diode module as set forth in claim 3, wherein the first and second portions of said light detector are arranged perpendicular to a surface of said temperature-controlled substrate. 5. The semiconductor laser diode module as set forth in claim 3, wherein the first and second portions of said light detector are arranged in parallel with a surface of said temperature-controlled substrate. 6. The semiconductor laser diode module as set forth in claim 1, further comprising: a first temperature-controlled substrate mounting said semiconductor laser diode and said collimating lens; and a second temperature-controlled substrate mounting said bandpass filter and said light detector, a temperature of said first temperature-controlled substrate being controlled in accordance with the output signal of the second portion of said light detector to control the light intensity of said semiconductor laser diode, a temperature of said second temperature-controlled substrate being controlled at a predetermined value. 7. The semiconductor laser diode module as set forth in claim 6, wherein the first and second portions of said light detector are arranged perpendicular to a surface of said second temperature-controlled substrate. 8. The semiconductor laser diode module as set forth in claim 6, wherein the first and second portions of said light detector are arranged in parallel with a surface of said second temperature-controlled substrate. 9. The semiconductor laser diode module as set forth in claim 1, further comprising: a temperature-controlled substrate mounting said semiconductor laser diode and said collimating lens; a non-temperature-controlled substrate mounting said bandpass filter and said light detector; and a temperature sensor for detecting a temperature of said non-temperature-controlled substrate; a temperature of said temperature-controlled substrate being controlled in accordance with the output signal of the second portion of said light detector to control the light intensity of said semiconductor laser diode, the output signal of the first portion of said light detector being corrected in accordance with the detected temperature of said non-temperature-controlled substrate. 10. The semiconductor laser diode module as set forth in claim 9, wherein the first and second portions of said light detector are arranged perpendicular to a surface of said non-temperature-controlled substrate. 11. The semiconductor laser diode module as set forth in claim 9, wherein the first and second portions of said light detector are arranged in parallel with a surface of said non-temperature-controlled substrate. 12. The semiconductor laser diode module as set forth in claim 1, wherein said semiconductor laser diode has no rear facet for emitting a light beam. 13. The semiconductor laser diode module as set forth in claim 12, wherein said semiconductor laser diode comprises a surface emitting semiconductor laser diode. 14. The semiconductor laser diode module as set forth in claim 12, wherein said semiconductor laser diode comprises a wavelength tunable semiconductor laser diode array. 15. The semiconductor laser diode module as set forth in claim 14, wherein said semiconductor laser diode further comprises: a light combiner for combining light beams of elements of said wavelength tunable semiconductor laser diode array; and an optical amplifier for amplifying an output of said light combiner. 16. The semiconductor laser diode module as set forth in claim 1, wherein said bandpass filter comprises an etalon. 17. The semiconductor laser diode module as set forth in claim 1, wherein said bandpass filter comprises a solid state bandpass filter. 18. The semiconductor laser diode module as set forth in claim 1, wherein said bandpass f