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특허 상세정보

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내보내기 페이스북 공유 카카오톡 공유

Methods of fabricating silicon carbide crystals

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C30B-028/12    C30B-028/14   
미국특허분류(USC) 117/084; 117/088; 117/094; 117/097; 117/911; 117/951
출원번호 US-0862108 (2001-05-21)
발명자 / 주소
  • Mueller, Stephan
출원인 / 주소
  • Cree, Inc.
대리인 / 주소
    Myers Bigel Sibley & Sajovec, P.A.
인용정보 피인용 횟수 : 27  인용 특허 : 48
초록
▼

Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystal...

대표
청구항
▼

1. A method of producing silicon carbide crystals, comprising: forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern by: providing regions of higher thermal conductivity in a seed crystal holder, the regions of higher thermal conductivity corresponding to the predefined pattern; mounting the seed crystal on the seed crystal holder; and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. 2. The meth...

인용문헌 (48)

  1. Balakrishna Vijay ; Augustine Godfrey ; Gaida Walter E. ; Thomas R. Noel ; Hopkins Richard H., Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide.
  2. Sawin Herbert H. (Arlington MA) Conner William T. (Somerville MA) Dalton Timothy J. (N. Reading MA) Sachs Emanuel M. (Somerville MA), Apparatus and method for real-time measurement of thin film layer thickness and changes thereof.
  3. Carter Calvin H. ; Tsvetkov Valeri F. ; Glass Robert C., Colorless silicon carbide crystals.
  4. Cline Harvey E. (Schenectady NY) Anthony Thomas R. (Schenectady NY), Deep buried layers for semiconductor devices.
  5. Volkl Johannes,DEX ; Lanig Peter,DEX, Device for producing SiC single crystals.
  6. Davis Robert F. ; Nam Ok-Hyun,KRX ; Zheleva Tsvetanka ; Bremser Michael D., Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer.
  7. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
  8. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
  9. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
  10. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride from a melt.
  11. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride from a melt.
  12. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride: silicon carbide alloys.
  13. Carter Calvin H. ; Tsvetkov Valeri F. ; Glass Robert C., Growth of colorless silicon carbide crystals.
  14. Morrison Andrew D. (Altadena CA) Daud Taher (LaCrescenta CA), Low defect, high purity crystalline layers grown by selective deposition.
  15. Palmour John W. (Raleigh NC), Metal-insulator-semiconductor capacitor formed on silicon carbide.
  16. Yonehara Takao,JPX ; Naruse Yasuhiro,JPX, Method for forming crystal and crystal article obtained by said method.
  17. Furukawa Katsuki (Sakai JPX) Tajima Yoshimitsu (Nara JPX) Suzuki Akira (Nara JPX), Method for growing a silicon carbide single crystal.
  18. Barrett Donovan L. ; Seidensticker ; deceased Raymond G. ; Hopkins Richard H., Method for growing large silicon carbide single crystals.
  19. Stein Ren (Rttenbach DEX), Method for manufacturing single-crystal silicon carbide.
  20. Stein Rene,DEX ; Rupp Roland,DEX ; Volkl Johannes,DEX, Method for producing silicon carbide monocrystals.
  21. Vichr Miroslav ; Hoover David Samuel, Method for the growth of industrial crystals.
  22. Shigeta Mitsuhiro (Kyoto JPX) Suzuki Akira (Nara JPX) Furukawa Katsuki (Sakai JPX) Fujii Yoshihisa (Nara JPX), Method for the growth of silicon carbide single crystals.
  23. Suzuki Akira (Nara JPX) Furukawa Katsuki (Sakai JPX) Shigeta Mitsuhiro (Tenri JPX), Method of fabricating single-crystal substrates of silicon carbide.
  24. Hopkins Richard H. ; Augustine Godfrey ; Hobgood H. McDonald, Method of growing 4H silicon carbide crystal.
  25. Shiomi Hiromu,JPX ; Nishino Shigehiro,JPX, Method of making SiC single crystal and apparatus for making SiC single crystal.
  26. Stein Rene,DEX ; Rupp Roland,DEX, Method of producing boron-doped monocrystalline silicon carbide.
  27. Barrett Donovan L. ; Thomas Richard N. ; Seidensticker ; deceased Raymond G. ; Hopkins Richard H., Method of producing large diameter silicon carbide crystals.
  28. Sugiyama Naohiro,JPX ; Okamoto Atsuto,JPX ; Tani Toshihiko,JPX ; Kamiya Nobuo,JPX, Method of producing silicon carbide single crystal.
  29. Furukawa Katsuki (Sakai JPX) Tajima Yoshimitsu (Nara JPX) Suzuki Akira (Nara JPX), Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal.
  30. Kitou Yasuo,JPX ; Sugiyama Naohiro,JPX ; Okamoto Atsuto,JPX ; Tani Toshihiko,JPX ; Kamiya Nobuo,JPX, Method of producing single crystals and a seed crystal used in the method.
  31. Linthicum Kevin J. ; Gehrke Thomas ; Thomson Darren B. ; Carlson Eric P. ; Rajagopal Pradeep ; Davis Robert F., Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates.
  32. Stephani Dietrich,DEX ; Volkl Johannes,DEX, Process and device for sublimation growing of silicon carbide monocrystals.
  33. Kitoh Yasuo,JPX ; Suzuki Masahiko,JPX ; Sugiyama Naohiro,JPX, Process for growing single crystal.
  34. Suzuki Akira (Nara JPX) Furukawa Katsuki (Osaka JPX), Process for producing a single-crystal substrate of silicon carbide.
  35. Hunter Charles Eric, Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy.
  36. Hunter Charles Eric, Production of bulk single crystals of silicon carbide.
  37. Volkl Johannes,DEX ; Stein Rene,DEX, Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers.
  38. Takahashi Jun,JPX ; Kanaya Masatoshi,JPX ; Fujiwara Yuichiro,JPX ; Ohtani Noboru,JPX, SiC single crystal and method for growth thereof.
  39. Hunter Charles Eric, Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys.
  40. Tanino Kichiya,JPX, Single crystal SIC and a method of producing the same.
  41. Tanino Kichiya,JPX ; Hiramoto Masanobu,JPX, Single crystal SIC and method of producing the same.
  42. Tanino Kichiya,JPX, Single crystal SiC and a method of producing the same.
  43. Tanino Kichiya,JPX ; Hiramoto Masanobu,JPX, Single crystal SiC and a method of producing the same.
  44. Tanino Kichiya,JPX ; Hiramoto Masanobu,JPX, Single crystal SiC and a method of producing the same.
  45. Tanino Kichiya,JPX, Single crystal and method of producing the same.
  46. Takahaski Jun (Sagamihara JPX) Kanaya Masatoshi (Sagamihara JPX), Sublimation growth of single crystal SiC.
  47. Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
  48. Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.

이 특허를 인용한 특허 (27)

  1. Saxler, Adam William, Aluminum free group III-nitride based high electron mobility transistors.
  2. Saxler, Adam William, Binary group III-nitride based high electron mobility transistors.
  3. Smith, Richard Peter; Saxler, Adam William; Sheppard, Scott T., Cap layers including aluminum nitride for nitride-based transistors.
  4. Saxler, Adam William, Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices.
  5. Saxler,Adam William, Current aperture transistors and methods of fabricating same.
  6. Saxler, Adam William; Wu, Yifeng; Parikh, Primit; Mishra, Umesh; Smith, Richard Peter; Sheppard, Scott T., Devices having thick semi-insulating epitaxial gallium nitride layer.
  7. Parikh,Primit; Wu,Yifeng; Saxler,Adam William, Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies.
  8. Smith, Richard Peter; Sheppard, Scott T.; Saxler, Adam William; Wu, Yifeng, Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions.
  9. Smith, Richard Peter; Sheppard, Scott T.; Saxler, Adam William; Wu, Yifeng, Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions.
  10. Smith,Richard Peter; Sheppard,Scott T.; Saxler,Adam William; Wu,Yifeng, Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions.
  11. Parikh,Primit; Wu,Yifeng; Saxler,Adam William, High power density and/or linearity transistors.
  12. Nishino, Shigehiro; Murata, Kazutoshi, Large-diameter SiC wafer and manufacturing method thereof.
  13. Powell,Adrian; Brady,Mark; Tsvetkov,Valeri F., Low basal plane dislocation bulk grown SiC wafers.
  14. Saxler, Adam William, Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same.
  15. Mueller,Stephan, Methods of fabricating silicon carbide crystals.
  16. Saxler, Adam William; Wu, Yifeng; Parikh, Primit; Mishra, Umesh; Smith, Richard Peter; Sheppard, Scott T., Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers.
  17. Smith, Richard Peter; Sheppard, Scott T., Methods of fabricating transistors including dielectrically-supported gate electrodes.
  18. Smith, Richard Peter; Sheppard, Scott T., Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices.
  19. Sheppard, Scott T.; Allen, Scott, Methods of fabricating transistors including supported gate electrodes.
  20. Saxler, Adam William; Sheppard, Scott; Smith, Richard Peter, Methods of passivating surfaces of wide bandgap semiconductor devices.
  21. Saxler, Adam William; Sheppard, Scott; Smith, Richard Peter, Nitride-based transistors having laterally grown active region and methods of fabricating same.
  22. Mueller,Stephan; Powell,Adrian; Tsvetkov,Valeri F., Seed and seedholder combinations for high quality growth of large silicon carbide single crystals.
  23. Mueller,Stephan; Powell,Adrian; Tsvetkov,Valeri F., Seed and seedholder combinations for high quality growth of large silicon carbide single crystals.
  24. Saxler,Adam William, Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same.
  25. Powell,Adrian; Brixius,William H.; Leonard,Robert Tyler; McClure,Davis Andrew; Laughner,Michael, Three inch silicon carbide wafer with low warp, bow, and TTV.
  26. Saxler,Adam William; Sheppard,Scott; Smith,Richard Peter, Transistors having buried n-type and p-type regions beneath the source region.
  27. Liu,Deming; Fu,Ran, Wire clamping plate.

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