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An energy conversion apparatus and method includes a central shaft rotatable around a first axis, at least one body rotating around a second axis, wherein the first axis and second axis intersect at a vertex, wherein the at least one body is connected to the central shaft and wherein the at least on

An energy conversion apparatus and method includes a central shaft rotatable around a first axis, at least one body rotating around a second axis, wherein the first axis and second axis intersect at a vertex, wherein the at least one body is connected to the central shaft and wherein the at least one body pivots about a point off the first axis and off the second axis, a drive means disposed adjacent to the at least one body, wherein the drive means is rotated by the at least one body, and a fixed core disposed around the central shaft, wherein the fixed core is connected to the drive means such that the at least one body is capable of orbiting around the fixed core.

대표청구항 ▼

An energy conversion apparatus and method includes a central shaft rotatable around a first axis, at least one body rotating around a second axis, wherein the first axis and second axis intersect at a vertex, wherein the at least one body is connected to the central shaft and wherein the at least on

An energy conversion apparatus and method includes a central shaft rotatable around a first axis, at least one body rotating around a second axis, wherein the first axis and second axis intersect at a vertex, wherein the at least one body is connected to the central shaft and wherein the at least one body pivots about a point off the first axis and off the second axis, a drive means disposed adjacent to the at least one body, wherein the drive means is rotated by the at least one body, and a fixed core disposed around the central shaft, wherein the fixed core is connected to the drive means such that the at least one body is capable of orbiting around the fixed core. 0. A semiconductor device, comprising: a semiconductor chip; and a substrate with front and rear surfaces, the substrate having a central portion with a through hole and having a peripheral portion that surrounds the central portion, the semiconductor chip being mounted on the central portion of the substrate and aligned with the through hole, the front surface of the substrate lying substantially in a plane in the peripheral portion and rising above the plane in the central portion to provide the substrate with a hollow region, wherein the substrate comprises a substantially rectangular metal member, part of which is disposed in the central portion of the substrate and part of which is disposed in the peripheral portion. 11. The semiconductor device of claim 10, wherein the semiconductor chip has a front surface that is oriented toward the plane but is disposed above the plane. 12. The semiconductor device of claim 10, wherein the plane is a first plane, wherein the central portion of the substrate of the substrate has an annular shoulder region in the central portion, wherein the annular shoulder region lies substantially in a second plane that is disposed above the first plane, and further comprising electrodes disposed at the shoulder region, and wires extending from the semiconductor chip to the electrodes. 13. The semiconductor device of claim 12, wherein the front surface of the substrate has a summit region in the central region, wherein the summit region lies substantially in a third plane that is disposed above the second plane, and wherein the through hole is disposed in the summit region. 14. The semiconductor device of claim 13, wherein the semiconductor chip has a rear surface that faces the through hole, and wherein the rear surface of the semiconductor chip is spaced apart from the first plane by a distance that is no larger than the distance between the first and third planes. 15. The semiconductor device of claim 10, wherein the semiconductor chip has a rear surface that faces the through hole, and further comprising resin that fills the through hole, and a heat sink plate at the rear surface of the substrate. 16. The semiconductor device of claim 10, wherein the semiconductor chip is mounted inside the through hole.