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A system, method and device for selecting and displaying navigational information is presented which displays navigational procedures and/or options, allows for selecting and deselecting the procedures and/or options, and allows for generating a predetermined set of navigational procedures and/or op

A system, method and device for selecting and displaying navigational information is presented which displays navigational procedures and/or options, allows for selecting and deselecting the procedures and/or options, and allows for generating a predetermined set of navigational procedures and/or options based upon the previous selection of navigational procedures and/or options. The system, method and device provide a more efficient and intuitive method for planning and programming a navigational path with special emphasis on facilitating the planning and programming of a phase of arrival for the flight path of an aircraft.

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A system, method and device for selecting and displaying navigational information is presented which displays navigational procedures and/or options, allows for selecting and deselecting the procedures and/or options, and allows for generating a predetermined set of navigational procedures and/or op

A system, method and device for selecting and displaying navigational information is presented which displays navigational procedures and/or options, allows for selecting and deselecting the procedures and/or options, and allows for generating a predetermined set of navigational procedures and/or options based upon the previous selection of navigational procedures and/or options. The system, method and device provide a more efficient and intuitive method for planning and programming a navigational path with special emphasis on facilitating the planning and programming of a phase of arrival for the flight path of an aircraft. ircuit of claim 12 wherein said rectifier comprises a Schottky diode mesa structure of less than about ten microns in length and width. 14. The integrated circuit of claim 1 wherein said rectifier comprises a Schottky diode mesa structure and said selected wavelength corresponds to a frequency at which said antenna structure has an impedance at least nearly matching an impedance of said Schottky diode at the same frequency. 15. The integrated circuit of claim 5 further comprising an insulating thin film layer between conductor thin film layer and said membrane and a pair of capacitors connected to respective ones of said pair of conductors formed in said conductive thin film layer and separated from said membrane by said insulating thin film layer. 16. The integrated circuit of claim 15 wherein said pair of capacitors comprise tuning capacitors. 17. The integrated circuit of claim 1 wherein the semiconductor material of a base layer and the semiconductor material of said membrane are each intrinsic semiconductor material. 18. The integrated circuit of claim 17 wherein said rectifier comprises doped semiconductor material comprising a lower n+ layer of GaAs and an upper n layer of GaAs and a pair of metal contacts on a top surface of said n layer constituting opposite terminals of said rectifier. 19. A submillimeter wave antenna and rectifier integrated circuit for mounting on and supplying D.C. electrical power to a microminiature device, said integrated circuit comprising: an underlying cavity of semiconductor material having a length and width lying in a plane and corresponding to a selected submillimeter wavelength and having a thickness normal to said plane, said cavity having side walls and a planar conductive floor parallel to said plane; a planar membrane of semiconductive material constituting a ceiling of said cavity and being parallel to said planar floor; an antenna structure on said planar membrane, said antenna structure comprising antenna elements each having a length corresponding to a predetermined fraction of said selected submillimeter wavelength, said thickness of said cavity being related to said selected submillimeter wavelength in such a manner that said cavity produces in said antenna structure a front-to-back antenna gain ratio in a direction normal to said plane of at least 6 dB; a semiconductor rectifier formed on said membrane and connected across said antenna structure. 20. The integrated circuit of claim 19 wherein said antenna structure comprises plural parallel spaced apart dipole antennas each of a length of half of said selected wavelength and each separated into two sections. 21. The integrated circuit of claim 20 wherein said dipole antennas comprise two elongate slot antennas and said rectifier is connected between said two elongate slot antennas comprising respective slots formed through said membrane. 22. The integrated circuit of claim 20 wherein said dipole antennas comprise two conductor antennas and said rectifier is connected between the two sections of each of said dipole antennas. 23. The integrated circuit of claim 21 further comprising a pair of conductors formed as a conductive thin film layer overlying said membrane and connected to opposite sides of said rectifier, each of said pair of conductors having a respective elongate portion extending transversely across a respective one of said elongate slots whereby to divide the one slot into two equal slot sections to define corresponding dipole elements. 24. The integrated circuit of claim 23 wherein said rectifier comprises a diode. 25. The integrated circuit of claim 24 wherein said rectifier comprises a full-wave rectifying diode bridge. 26. The integrated circuit of claim 24 wherein said diode comprises a GaAs layer on said membrane and a pair of contacts on a top surface of said GaAs layer to respective ones of said pair of conductors. 27. The integrated circuit of claim 19 wherein said conductive floor comprises a met