초록 ▼

Flow-through capacitors are provided with one or more charge barrier layers. Ions trapped in the pore volume of flow-through capacitors cause inefficiencies as these ions are expelled during the charge cycle into the purification path. A charge barrier layer holds these pore volume ions to one side

Flow-through capacitors are provided with one or more charge barrier layers. Ions trapped in the pore volume of flow-through capacitors cause inefficiencies as these ions are expelled during the charge cycle into the purification path. A charge barrier layer holds these pore volume ions to one side of a desired flow stream, thereby increasing the efficiency with which the flow-through capacitor purifies or concentrates ions.

대표청구항 ▼

Flow-through capacitors are provided with one or more charge barrier layers. Ions trapped in the pore volume of flow-through capacitors cause inefficiencies as these ions are expelled during the charge cycle into the purification path. A charge barrier layer holds these pore volume ions to one side

Flow-through capacitors are provided with one or more charge barrier layers. Ions trapped in the pore volume of flow-through capacitors cause inefficiencies as these ions are expelled during the charge cycle into the purification path. A charge barrier layer holds these pore volume ions to one side of a desired flow stream, thereby increasing the efficiency with which the flow-through capacitor purifies or concentrates ions. polishing platens arranged aside of the wafer holders, each strip polishing platen, comprising a polishing pad arranged on the polishing platen; a robotic arm coupled to the strip polishing platen, wherein the robotic arm controls a rotation of the strip polishing platen and ensures the polishing pad on the strip polishing platen touching the wafer during polishing; and a slurry feeding system incorporated in the strip polishing platen to provide a polishing slurry between the polishing pad and the wafer for polishing, wherein one end of the strip polishing platen is fixed and the strip polishing platen can be rotated about a rotation axis at the fixed end with a rotating angle less than 360 degrees, wherein the strip polishing platen is located above one wafer holder during polishing and the polishing pad on the strip polishing platen faces the wafer holder, while the wafer holder rotates the wafer independent of the rotation of the strip polishing platen, and wherein the strip polishing platen is seated in a resting position beside the wafer holder during resting. 12. The CMP equipment of claim 11, wherein each strip polishing platen is strip-shaped. 13. The CMP equipment of claim 11, wherein each strip polishing platen is baguette-shaped. 14. The CMP equipment of claim 11, wherein the robotic arm further controls an applied pressure of the polishing pad on the wafer. 15. The CMP equipment of claim 11, wherein each strip polishing platen rotates with the rotating angle from 0 to 90 degrees. 16. The CMP equipment of claim 11, wherein the polishing pad is arranged on the polishing platen at an end opposite to the fixed end of the strip polishing platen. 17. The CMP equipment of claim 11, wherein a carrier film is further included between the wafer and each wafer holder for elasticity. 18. The CMP equipment of claim 11, wherein a conditioner is further included and arranged under the polishing platen and at the resting position of the polishing platen. 19. The CMP equipment of claim 11, wherein the polishing pad is a flat pad arranged on the strip polishing platen. 20. The CMP equipment of claim 11, wherein the polishing pad is a cylindrical polishing roller mounted on the strip polishing platen. 50400, Kershaw et al.; US-5656134, 19970800, Marinack et al.; US-5685954, 19971100, Marinack et al.; US-5690788, 19971100, Marinack et al.; US-5885415, 19990300, Marinack et al.; US-5885416, 19990300, Marinack et al.; US-5885417, 19990300, Marinack et al.; US-5908533, 19990600, Marinack et al.; US-6027614, 20000200, Parker et al.; US-6066234, 20000500, Parker et al.; US-6074526, 20000600, Marinack; US-6096168, 20000800, Marinack et al. (exclusive of 0%), and/or B: 0.01% or less (exclusive of 0%). 8. A superhigh-strength dual-phase steel as defined in claim 6 having a tensile strength of about 780 to 1180 MPa. 9. A superhigh-strength dual-phase steel as defined in claim 8 the Ti, Nb or V content of which is less than 0.02% (inclusive of 0%).