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A process for injection molding of molded parts made from thermoplastic plastic material having at least one cavity, which includes: a) injection of thermoplastic plastic melt from an injection unit along a melt flow path into the cavity of an injection-molding die; b) injection of a fluid into the

A process for injection molding of molded parts made from thermoplastic plastic material having at least one cavity, which includes: a) injection of thermoplastic plastic melt from an injection unit along a melt flow path into the cavity of an injection-molding die; b) injection of a fluid into the still molten plastic material, so that the latter is pressed against the walls of the cavity; c) allowing the plastic material to cool until the latter forms the molded part in self-supporting manner; and d) releasing the molded part from the cavity of the injection-molding die.

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A process for injection molding of molded parts made from thermoplastic plastic material having at least one cavity, which includes: a) injection of thermoplastic plastic melt from an injection unit along a melt flow path into the cavity of an injection-molding die; b) injection of a fluid into the

A process for injection molding of molded parts made from thermoplastic plastic material having at least one cavity, which includes: a) injection of thermoplastic plastic melt from an injection unit along a melt flow path into the cavity of an injection-molding die; b) injection of a fluid into the still molten plastic material, so that the latter is pressed against the walls of the cavity; c) allowing the plastic material to cool until the latter forms the molded part in self-supporting manner; and d) releasing the molded part from the cavity of the injection-molding die. d Reactions of these to Generate Unusual Acyl Complexes", J. Chem. Soc., Dalton Trans., 1993, ISS. 7, pp. 1031-1037. Blake, A.J., et al., "Novel Reaction of an Iridium Carbonyl Complex with Xenon Difluoride: The First Metal Fluoroacyl Complex", J. Chem. Soc., Chem. Commun.,1988, ISS.8, pp. 529-530. Sladkey, F.O., et al., "Xenon Difluoride as a Fluoride Ion Donor" J. Chem. Soc. A, 1969, vol. 14, pp. 2179-2188. g layer is ruthenium. 9. The method of claim 7 or claim 8, wherein said first plasma source gas is at least 50% by volume nitrogen. 10. The method of claim 9, wherein said first plasma source gas is nitrogen. 11. The method of claim 7 or claim 8, wherein said first plasma source gas is at least 50% or more oxygen by volume. 12. The method of claim 11, wherein said first plasma source gas is oxygen. 13. The method of claim 9, wherein a said second plasma source gas used during subsequent plasma etching of said ruthenium-containing layer is at about 70% or more oxygen by volume. 14. The method of claim 10, wherein said second plasma source gas used during subsequent plasma etching of said ruthenium-containing layer is about 70% or more oxygen by volume. 15. The method of claim 11, wherein said second plasma source gas used during subsequent plasma etching of said ruthenium-containing layer is at about 70% or more oxygen by volume. 16. The method of claim 12, wherein said second plasma source gas used during subsequent plasma etching of said ruthenium-containing layer is about 70% or more oxygen by volume. 17. The method of claim 1, wherein said metal-containing layer is an iridium-containing layer and said first plasma source gas used to produce said preheating plasma includes a gas selected from the group consisting of nitrogen, oxygen, and combinations thereof. 18. The method of claim 17, wherein said iridium-containing layer is iridium oxide. 19. The method of claim 17, wherein said iridium-containing layer is iridium. 20. The method of claim 18 or claim 19, wherein said first plasma source gas is at least 50% by volume nitrogen. 21. The method of claim 20, wherein said first plasma source gas is nitrogen. 22. The method of claim 18 or claim 19, wherein said first plasma source gas is about 50% or more oxygen by volume. 23. The method of claim 22, wherein said first plasma source gas is oxygen. 24. The method of claim 20, wherein a said second plasma source gas used during subsequent plasma etching of said iridium-containing layer is about 70% or more oxygen by volume. 25. The method of claim 21, wherein a said second plasma source gas used during subsequent plasma etching of said iridium-containing layer is about 70% or more oxygen by volume. 26. The method of claim 22, wherein a said second plasma source gas used during subsequent plasma etching of said iridium-containing layer is about 70% or more oxygen by volume. 27. The method of claim 23, wherein said second plasma source gas used during subsequent plasma etching of said iridium-containing layer is about 70% or more oxygen by volume. 28. The method of claim 4, wherein said first nitrogen-comprising plasma source gas is nitrogen. 29. The method of claim 17, wherein said second source gas includes oxygen. 30. The method of claim 1, wherein said second plasma source gas includes an inert, non-reactive gas selected from the group consisting of helium, neon, argon.