IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0640149
(2000-08-16)
|
발명자
/ 주소 |
- Eldridge, Jerome M.
- Farrar, Paul A.
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
12 인용 특허 :
58 |
초록
▼
A microelectronic device package and method for manufacture. In one embodiment, the device package can include a microelectronic substrate having first and second device features, a conductive link that includes a conductive material extending between the first and second device features, and an ext
A microelectronic device package and method for manufacture. In one embodiment, the device package can include a microelectronic substrate having first and second device features, a conductive link that includes a conductive material extending between the first and second device features, and an external cover attached to the substrate and at least partially enclosing the first and second device features and the conductive link. The external cover can have a composition substantially identical to the composition of the conductive links and the external cover can be formed simultaneously with formation of the conductive link to reduce the number of process steps required to form the microelectronic device package. A sacrificial material can temporarily support the conductive link during manufacture and can subsequently be removed to suspend at least a portion of the conductive link between two points.
대표청구항
▼
A microelectronic device package and method for manufacture. In one embodiment, the device package can include a microelectronic substrate having first and second device features, a conductive link that includes a conductive material extending between the first and second device features, and an ext
A microelectronic device package and method for manufacture. In one embodiment, the device package can include a microelectronic substrate having first and second device features, a conductive link that includes a conductive material extending between the first and second device features, and an external cover attached to the substrate and at least partially enclosing the first and second device features and the conductive link. The external cover can have a composition substantially identical to the composition of the conductive links and the external cover can be formed simultaneously with formation of the conductive link to reduce the number of process steps required to form the microelectronic device package. A sacrificial material can temporarily support the conductive link during manufacture and can subsequently be removed to suspend at least a portion of the conductive link between two points. ncois, G.; Fleury, G., Anomalous behaviour of amorphous selenium films, J. Non-Cryst. Solids 33 (1976) 267-272. Vodenicharov, C.; Parvanov,S.; Petkov,P., Electrode-limited currents in the thin-film M-GeSe-M system, Mat. Chem. And Phys. 21 (1989) 447-454. Wang, S.-J.; Misium, G.R.; Camp, J.C.; Chen, K.-L.; Tigelaar, H.L., High-performance Metal/silicide antifuse, IEEE electron dev. Lett. 13 (1992)471-472. Weirauch, D.F., Threshold switching and thermal filaments in amorphous semiconductors, App. Phys. Lett. 16 (1970) 72-73. West, W.C.; Sieradzki, K.; Kardynal, B.; Kozicki, M.N., Equivalent circuit modeling of the Ag|Ag0.24S0.36Ag0.40|Ag System prepared by photodissolution of Ag, J. Electrochem. Soc. 145 (1998) 2971-2974. West, W.C., Electrically erasable non-volatile memory via electrochemical depostion of multifractal agregates, Ph.D. Dissertation, ASU 1998. Zhang, M.; Mancini, S.; Bresser, W.; Boolchand, P., Variation of glass transition temperature, Tg, with average coordination No., , in network glasses: evidence of a threshold behavior in the slope |dTg/d| at the rigidity percolation threshold (=2.4), J. Non-Cryst. Solids 151 (1992) 149-154. "Modification of Vitreous As2Se3" Solar Energy Materials, Kolomiets, et al., vol. 8 No. 1-3, Nov. 1982; pp. 1-8. "Diffusion of Metal Ions and Stimulated Currents into As2Se3 Thin Films", Kim et al., Japanese Journal of Applied Physics, Part I, vol. 28, No. 6, Jun. 1989, pp. 965-971.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.