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A method for disposing metal wiring on the surface of an insulating film formed on a semiconductor substrate. A recess is formed in the insulating film, and a metal wiring film composed of a metal wiring material is laminated on the insulating film having the recess formed therein. Further, the meta

A method for disposing metal wiring on the surface of an insulating film formed on a semiconductor substrate. A recess is formed in the insulating film, and a metal wiring film composed of a metal wiring material is laminated on the insulating film having the recess formed therein. Further, the metal wiring film laminated on a surface area outside the recess in the insulating film is selectively removed. Thereafter, the metal wiring film laminated above the recess is polished by chemical mechanical polishing.

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1. A method of fabricating a semiconductor device by disposing metal wiring on a surface of an insulating film formed on a semiconductor substrate, comprising the steps of: forming a recess in the insulating film; laminating a barrier metal film on the insulating film having the recess formed th

1. A method of fabricating a semiconductor device by disposing metal wiring on a surface of an insulating film formed on a semiconductor substrate, comprising the steps of: forming a recess in the insulating film; laminating a barrier metal film on the insulating film having the recess formed therein; selectively removing a portion, outside the recess, of the barrier metal film; depositing a metal wiring film composed of a metal wiring material on the barrier metal film remaining in the recess after removing the barrier metal film; and polishing the metal wiring film by chemical mechanical polishing. 2. The method according to claim 1, wherein the step of polishing the metal wiring film by the chemical mechanical polishing is terminated at the time point where the surface, outside the recess, of the insulating film is exposed. 3. The method according to claim 1, wherein the step of selectively removing the barrier metal film comprises the step of removing the portion, outside the recess, of the barrier metal film by the chemical mechanical polishing. 4. The method according to claim 1, wherein the step of selectively removing the barrier metal film comprises the steps of forming a patterning mask for selectively covering a surface, inside the recess, of the barrier metal film, and selectively removing by etching a portion, other than a portion masked by the patterning mask, of the barrier metal film. 5. A method of fabricating a semiconductor device by disposing metal wiring on a surface of an insulating film formed on a semiconductor substrate, comprising the steps of: forming a recess in the insulating film; depositing a metal wiring film composed of a metal wiring material on the insulating film having the recess formed therein; selectively forming a polishing adjusting film in a depression occurring, opposite to the recess, on the surface of the deposited metal wiring film; and polishing the metal wiring film by chemical mechanical polishing after forming the polishing adjusting film. 6. The method according to claim 5, wherein the step of selectively forming the polishing adjusting film comprises the steps of applying a material for the polishing adjusting film to the depression, and baking the applied material for the polishing adjusting film. 7. The method according to claim 5, wherein the step of laminating a barrier metal film on the insulating film having the recess formed therein is further included between the step of forming the recess and the step of depositing the metal wiring film, and the polishing adjusting film is a polishing rate adjusting film whose polishing rate by the chemical mechanical polishing is lower than that of the metal wiring film and is higher than that of the barrier metal film. 8. The method according to claim 5, wherein the polishing adjusting film is formed using a material whose polishing rate by the chemical mechanical polishing is approximately equal to that of the metal wiring film. 9. The method according to claim 8, wherein the metal wiring film is formed to such a thickness that a bottom surface of the depression is lower than the surface, outside the recess, of the insulating film. 10. The method according to claim 5, wherein the metal wiring film is formed to such a thickness that a bottom surface of the depression is higher than the surface, outside the recess, of the insulating film. 11. The method according to claim 5, wherein the polishing adjusting film is formed such that the surface thereof is almost flush with the surface of the metal wiring film. 12. The method according to claim 5, wherein the polishing adjusting film is composed by the same metal as the metal wiring.