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A method for forming a group of structures in a semiconductor device includes forming a conductive layer on a substrate, where the conductive layer includes a conductive material, and forming an oxide layer over the conductive layer. The method further includes etching at least one opening in the ox

A method for forming a group of structures in a semiconductor device includes forming a conductive layer on a substrate, where the conductive layer includes a conductive material, and forming an oxide layer over the conductive layer. The method further includes etching at least one opening in the oxide layer, filling the at least one opening with the conductive material, etching the conductive material to form spacers along sidewalls of the at least one opening, and removing the oxide layer and a portion of the conductive layer to form the group of structures.

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1. A method for forming fins in a FinFET, comprising: forming an oxide layer on a silicon on insulator (SOI) wafer, the SOI wafer including a silicon layer, an insulator layer, and a substrate; creating at least one opening in the oxide layer; growing silicon in the at least one opening; etchi

1. A method for forming fins in a FinFET, comprising: forming an oxide layer on a silicon on insulator (SOI) wafer, the SOI wafer including a silicon layer, an insulator layer, and a substrate; creating at least one opening in the oxide layer; growing silicon in the at least one opening; etching the silicon to form spacers, the spacers being adjacent sidewalls of the opening; and removing the oxide layer and the silicon in the SOI wafer located below the oxide layer to form the fins. 2. The method of claim 1 wherein the forming an oxide layer includes: forming the oxide layer to a thickness ranging from about 500 .ANG. to about 1000 .ANG.. 3. The method of claim 1 wherein the creating includes: forming a mask over the oxide layer, and creating the at least one opening based on the mask. 4. The method of claim 1 wherein a width of each of the spacers ranges from about 200 .ANG. to 500 .ANG.. 5. The method of claim 1 wherein the removing includes: etching the oxide layer, and performing an anisotropic dry etch to remove the silicon below the oxide layer. 6. A method of manufacturing a semiconductor device, comprising: depositing an oxide layer over a conductive layer, the conductive layer including a conductive material; etching at least one opening in the oxide layer, the at least one opening having two sidewalls; filling the at least one opening with the conductive material, the filling including growing the conductive material via a selective epitaxial growth to fill the at least one opening; forming spacers adjacent the two sidewalls of the at least one opening; removing the oxide layer and a portion of the conductive layer to form fin structures; forming a source region and a drain region; depositing a gate material over the fin structures; and patterning and etching the gate material to form at least one gate electrode. 7. The method of claim 6 wherein the conductive material comprises silicon. 8. The method of claim 6 wherein the depositing an oxide layer includes: depositing the oxide layer to a thickness of roughly about 500 .ANG. to 1000 .ANG.. 9. The method of claim 6 further comprising: removing, prior to forming spacers, conductive material disposed above the oxide layer. 10. The method of claim 6 wherein the spacers are formed via a dry etch. 11. The method of claim 6 wherein a width of each spacer ranges from about 200 .ANG. to 500 .ANG.. 12. The method of claim 6 wherein the portion of the conductive layer includes a portion of the conductive layer below the oxide layer that remains after the oxide layer is etched. 13. A method for forming a plurality of structures on a wafer including a conductive layer that includes conductive material, comprising: forming an oxide layer over the conductive layer; etching at least one opening in the oxide layer; growing the conductive material in the at least one opening; etching the conductive material to form spacers along sidewalls of the at least one opening; and removing the oxide layer and a portion of the conductive layer to form the plurality of structures. 14. The method of claim 13 wherein a width of each of the plurality of structures ranges from about 200 .ANG. to 500 .ANG.. 15. The method of claim 13 wherein a height of each of the plurality of structures ranges from about 700 .ANG. to 1500 .ANG.. 16. The method of claim 13 the portion of the conductive layer includes that portion below the oxide layer. 17. The method of claim 13 wherein the conductive material includes silicon.