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Method for fabricating a semiconductor structure including a metal oxide interface with silicon

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
  • H01L-021/20
  • H01L-021/44
  • H01L-021/31
  • C30B-023/00
출원번호 US-0885409 (2001-06-21)
발명자 / 주소
  • Ramdani, Jamal
  • Droopad, Ravindranath
  • Yu, Zhiyi
출원인 / 주소
  • Motorola, Inc.
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 171  인용 특허 : 500

초록

A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monoc

대표청구항

A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monoc

이 특허에 인용된 특허 (500)

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  177. Fischer Michael A. (San Antonio TX), Medium access control protocol for wireless network.
  178. Koganei Akio,JPX ; Nishimura Naoki,JPX, Memory device utilizing giant magnetoresistance effect.
  179. Gardner Mark I. ; Gilmer Mark C., Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constant.
  180. Hayashi Shigenori (Nara JPX) Komaki Kazuki (Osaka JPX) Kamada Takeshi (Osaka JPX) Kitagawa Masatoshi (Osaka JPX) Deguchi Takashi (Shiga JPX) Takayama Ryoichi (Osaka JPX) Hirao Takashi (Osaka JPX), Method and apparatus for fabrication of dielectric thin film.
  181. Nevill Leland R., Method and apparatus for identifying integrated circuits.
  182. Yamashita Youji (Shizuoka JPX), Method and apparatus for manufacturing semi-insulation GaAs monocrystal.
  183. Joshi Abhay M. (Plainsboro NJ), Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy.
  184. Falk Robert A. (Louisville CO) Phillis Gary L. (Boulder CO), Method and apparatus for optically measuring distance and velocity.
  185. Smith Doran D. (Brick NJ), Method and apparatus for performing internal device structure analysis of a dual channel transistor by multiple-frequenc.
  186. H. Sprague Ackley, Method and apparatus for utilizing specular light to image low contrast symbols.
  187. Haartsen Jacobus,SEX, Method and arrangement for radio communication.
  188. Cook Robert K. (Poughkeepsie) Knepper Ronald W. (Lagrangeville) Kulkarni Subodh K. (Fishkill) Lange Russell C. (Newburgh) Ronsheim Paul A. (Wappingers Falls) Subbanna Seshadri (Hopewell Junction) Tej, Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface.
  189. Jewell Jack L., Method for fabricating a semiconductor device.
  190. Yi Zhiyi ; Droopad Ravindranath ; Overgaard Corey Daniel ; Ramdani Jamal ; Curless Jay A. ; Hallmark Jerald A. ; Ooms William J. ; Wang Jun, Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.
  191. Yu Zhiyi ; Droopad Ravindranath ; Overgaard Corey Daniel ; Ramdani Jamal ; Curless Jay A. ; Hallmark Jerald A. ; Ooms William J. ; Wang Jun, Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.
  192. Yu Zhiyi ; Wang Jun ; Droopad Ravindranath ; Ramdani Jamal, Method for fabricating a semiconductor structure having a stable crystalline interface with silicon.
  193. Lebby Michael S. (Chandler AZ) Norman Michael P. (Chandler AZ), Method for fabricating an angled diffraction grating.
  194. Lee Ming-Tsan,TWX ; Liu Chuan H.,TWX ; Fu Kuan-Yu,TWX, Method for fabricating an oxide layer on silicon with carbon ions introduced at the silicon/oxide interface in order to reduce hot carrier effects.
  195. So Sang Mun,KRX, Method for fabricating silicon-on-insulator wafer.
  196. Ota Yorito,JPX ; Masato Hiroyuki,JPX ; Kumabuchi Yasuhito,JPX ; Kitabatake Makoto,JPX, Method for forming an ohmic electrode.
  197. Yano Yoshihiko,JPX ; Noguchi Takao,JPX ; Nagano Katsuto,JPX, Method for forming oxide thin film and the treatment of silicon substrate.
  198. Nakato Tatsuo, Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant.
  199. McGinn Joseph T. (Flemington NJ) Jastrzebski Lubomir L. (Plainsboro NJ) Corboy ; Jr. John F. (Ringoes NJ), Method for growing a low defect monocrystalline layer on a mask.
  200. Yanjun Ma ; Yoshi Ono, Method for improving electrical properties of high dielectric constant films.
  201. Guldi Richard L. (Dallas TX), Method for improving gate oxide integrity using low temperature oxidation during source/drain anneal.
  202. Ooms William J. ; Marshall Daniel S. ; Hallmark Jerald A., Method for making a ferroelectric semiconductor device and a layered structure.
  203. Suh Jeong-Dae,KRX ; Sung Gun-Yong,KRX, Method for making a superconducting field-effect device with grain boundary channel.
  204. Feit Zeev (Brookline MA) Kostyk Douglas (Billerica MA) Woods Robert J. (Burlington MA), Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays.
  205. Hbert Francois (Sunnyvale CA), Method for producing a fully walled emitter-base structure in a bipolar transistor.
  206. Ichikawa Takeshi (Zama JPX) Yonehara Takao (Atsugi JPX) Sakamoto Masaru (Atsugi JPX) Naruse Yasuhiro (Aiko JPX) Nakayama Jun (Atsugi JPX) Yamagata Kenji (Kawasaki JPX) Sakaguchi Kiyofumi (Atsugi JPX), Method for producing semiconductor articles.
  207. Sakaguchi Kiyofumi (c/o Canon Kabushiki Kaisha 30-2 ; 3-chome Shimomaruko ; Ohta-ku ; Tokyo JPX) Yonehara Takao (c/o Canon Kabushiki Kaisha 30-2 ; 3-chome Shimomaruko ; Ohta-ku ; Tokyo JPX) Nishida S, Method for producing semiconductor device substrate by bonding a porous layer and an amorphous layer.
  208. Bisaro Ren (Saint Maur des Fosses FRX) Friederich Alain (Paris FRX), Method for the manufacture, by epitaxy, of monocrystalline layers of materials with different lattice parameters.
  209. Goesele Ulrich M. ; Tong Qin-Yi, Method for the transfer of thin layers monocrystalline material onto a desirable substrate.
  210. Sugiyama Haruo,JPX ; Inoue Kazushi,JPX, Method of detecting solid cancer cells and tissue atypia and method of testing tissues for use in bone marrow transplantation and peripheral blood stem cell transplantation.
  211. Shastry Shambhu K. (Framingham MA), Method of epitaxially growing compound semiconductor materials.
  212. Kizuki Hirotaka,JPX, Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface.
  213. Ramdani Jamal ; Droopad Ravindranath ; Yu Zhiyi, Method of fabricating a semiconductor structure including a metal oxide interface.
  214. Summerfelt Scott R. (Dallas TX), Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer.
  215. Abrokwah Jonathan K. ; Droopad Ravi ; Overgaard Corey D. ; Bowers Brian ; LaMacchia Michael P. ; Bernhardt Bruce A., Method of fabricating submicron FETs with low temperature group III-V material.
  216. Kanber Hilda (Rolling Hills Estates CA), Method of fabricating three dimensional gallium arsenide microelectronic device.
  217. Bevan Malcolm J. ; Shih Hung-Dah, Method of forming a cadmium telluride/silicon structure.
  218. Itoh Kenji (Kanagawa JPX), Method of forming a carbon film on a substrate made of an oxide material.
  219. Eshita Takashi (Inagi JPX) Mieno Fumitake (Kawasaki JPX) Furumura Yuji (Kawasaki JPX) Watanabe Takuya (Sagamihara JPX), Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers.
  220. Mooney John B. (San Jose CA) Sher Arden (San Carlos CA), Method of forming a low dislocation density semiconductor device.
  221. Seon Jeong-Min,KRX ; Kim Hwan-Myeong,KRX, Method of forming a perovskite structure semiconductor capacitor.
  222. Seon Jeong-Min,KRX ; Kim Hwan-Myeong,KRX, Method of forming a perovskite structure semiconductor capacitor.
  223. Droopad Ravi ; Abrokwah Jonathan K. ; Passlack Matthias ; Yu Zhiyi Jimmy, Method of forming a silicon nitride layer.
  224. Kawahara Takaaki,JPX ; Yamamuka Mikio,JPX ; Horikawa Tsuyoshi,JPX ; Tarutani Masayoshi,JPX ; Sato Takehiko,JPX ; Matsuno Shigeru,JPX, Method of forming high dielectric constant thin film and method of manufacturing semiconductor device.
  225. Seabaugh Alan C. ; Kao Yung Chung ; Purdes Andrew J. ; Randall John N., Method of forming lateral resonant tunneling devices.
  226. Belt Roger F. (Morristown NJ) Ings John B. (Boonton NJ), Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystallin.
  227. Inoue Yasunori (Osaka JPX) Hanafusa Hiroshi (Hirakata JPX), Method of forming single crystalline magnesia spinel film.
  228. Ramdani Jamal ; Lebby Michael S. ; Holm Paige M., Method of growing gallium nitride on a spinel substrate.
  229. Wilk Glen D. ; Anthony John M., Method of growing high-quality crystalline silicon quantum wells for RTD structures.
  230. Kiyoku Hiroyuki,JPX ; Nakamura Shuji,JPX ; Kozaki Tokuya,JPX ; Iwasa Naruhito,JPX ; Chocho Kazuyuki,JPX, Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device.
  231. Alain E. Kaloyeros ; Ana Londergan ; Barry Arkles, Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt.
  232. Kaneko Yawara,JPX, Method of making P-type group III-nitride semiconductor device having improved P contact.
  233. Pitt Gillies D. (Saffron Walden GB2) Greene Peter D. (Harlow GB2) Thrush Edward J. (Stansted Mountfitchet GB2) Whysall David H. (Harlow GB2), Method of making a Hall effect device.
  234. Abrokwah Jonathan K. (Tempe AZ) Huang Jenn-Hwa (Gilbert AZ) Ooms William J. (Chandler AZ), Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts.
  235. Miyagaki Shinji,JPX ; Eshita Takashi,JPX ; Ohkubo Satoshi,JPX ; Takai Kazuaki,JPX, Method of making a device having a heteroepitaxial substrate.
  236. Calviello Joseph A. (Kings Park NY) Hickman Grayce A. (Hicksville NY), Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substr.
  237. Kondo Makoto (Kawasaki JPX) Anayama Chikashi (Kawasaki JPX) Shoji Hajime (Kawasaki JPX), Method of making a semiconductor device utilizing crystal orientation dependence of impurity concentration.
  238. Umeno Masayoshi (Nagoya JPX) Sakai Shiro (Nagoya JPX) Yahagi Shinichiro (Ohbu JPX), Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice.
  239. Tsu Robert ; Kulwicki Bernard M., Method of making barium strontium titanate (BST) thin film by erbium donor doping.
  240. Abrokwah Jonathan K. (1963 E. Ranch Rd. Tempe AZ 85284) Huang Jenn-Hwa (1426 W. Tara Dr. Gilbert AZ 85234) Cho Jaeshin (507 E. Page Ave. Gilbert AZ 85234), Method of making ohmic contacts to a complementary III-V semiconductor device.
  241. Shichijo Hisashi (Garland TX), Method of making planarized heterostructures using selective epitaxial growth.
  242. Cozzette Stephen N. (Hightstown NJ) Davis Graham (Plainsboro NJ) Itak Jeanne (Hamilton NJ) Lauks Imants R. (Yardley PA) Mier Randall M. (Ottawa NJ CAX) Piznik Sylvia (Jackson NJ) Smit Nicolaas (Hight, Method of manufacturing a plurality of uniform microfabricated sensing devices having an immobilized ligand receptor.
  243. Murakami Toshiaki (Mito JPX) Moriwaki Kazuyuki (Mito JPX), Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film.
  244. Barber Ivor G., Method of packaging integrated circuits.
  245. Takeda Toshikazu (Nagaokakyo JPX) Ogiso Yoshifumi (Nagaokakyo JPX) Nakagawa Takuji (Nagaokakyo JPX) Senda Atsuo (Nagaokakyo JPX), Method of preparing InSb thin film.
  246. Yu Zhiyi Jimmy ; Hallmark Jerald A. ; Abrokwah Jonathan K. ; Overgaard Corey D. ; Droopad Ravi, Method of preparing crystalline alkaline earth metal oxides on a Si substrate.
  247. Newman Nathan (Montara CA) Kapitulnik Aharon (Palo Alto CA) Cole Brady F. (Sunnyvale CA) Simon Randy W. (Belmont CA), Method of preparing high temperature superconductor films on opposite sides of a substrate.
  248. Mantl Siegfried,DEX ; Hollander Bernd,DEX ; Butz Rainer,DEX, Method of producing electronic, electrooptical and optical components.
  249. Ohno Hirotaka (Tenri JPX) Matsunaga Hironori (Tenri JPX) Okamoto Yasunari (Nara JPX) Nakajima Yoshiharu (Nara JPX), Method of producing ferroelectric LiNb1-31 xTaxO30 상세보기
  • Dautartas Mindaugas F. ; Manchanda Lalita, Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants.
  • Kroon Simon G. (Stadskanaal NLX), Method of treating a monocrystalline body utilizing a measuring member consisting of a monocrystalline layer and an adjo.
  • Mirkarimi Paul B. ; Montcalm Claude, Method to adjust multilayer film stress induced deformation of optics.
  • Travis Johnson ; John McGowen ; Allyson Beuhler ; Charles Kimball Brush ; Robert Emil Lajos, Methods and compositions for attachment of biomolecules to solid supports, hydrogels, and hydrogel arrays.
  • Lo Yu-Hwa, Methods for growing defect-free heteroepitaxial layers.
  • Linthicum Kevin J. ; Gehrke Thomas ; Davis Robert F. ; Thomson Darren B. ; Tracy Kieran M., Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby.
  • Manning H. Montgomery, Methods of forming SOI insulator layers and methods of forming transistor devices.
  • Ho Seng-Tiong ; Chu Daniel Yen ; Zhang Jian-Ping ; Wu Shengli, Microcavity semiconductor laser.
  • Ramoothy Ramesh ; Yu Wang ; Jeffrey M. Finder ; Kurt Eisenbeiser ; Zhiyi Yu ; Ravindranath Droopad, Microelectronic piezoelectric structure and method of forming the same.
  • Hazelrigg ; Jr. George A. (4623 N. 4th Rd. Arlington VA 22203), Micromechanical/microelectromechanical identification devices and methods of fabrication and encoding thereof.
  • Honjo Kazuhiko (Tokyo JPX), Microwave . millimeter wave transmitting and receiving module.
  • Krishnaswamy S. Visvanathan (Monroeville PA) Horwitz Stuart S. (Randallstown MD) Moore Robert A. (Arnold MD), Microwave film bulk acoustic resonator and manifolded filter bank.
  • Schaefer Stephen R. (Carlsbad CA) Bechtel James H. (San Diego CA), Modular micro-optical systems and method of making such systems.
  • Buchan Nicholas I. (Danbury CT) Heuberger Willi (Richterswil CHX) Roentgen Peter (Thalwil CHX), Modulated strain heterostructure light emitting device.
  • Tsuzuki Koji,JPX ; Murakami Tsutomu,JPX ; Yamada Satoru,JPX ; Takeyama Yoshifumi,JPX ; Shimizu Koichi,JPX, Moldless semiconductor device and photovoltaic device module making use of the same.
  • Calviello Joseph A. (Kings Park NY) Hickman Grayce A. (Hicksville NY), Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate.
  • Choi Hong K. (Concord MA) Tsaur Bor-Yeu (Bedford MA) Turner George W. (Chelmsford MA), Monolithic integration of silicon and gallium arsenide devices.
  • Vasudev Prahalad (290 Autumnwood St. Thousand Oaks CA 91360) D\Haenens Irnee J. (131 Paradise Cove Malibu CA 90265), Monolithic integration of silicon on insulator and gallium arsenide semiconductor technologies.
  • Macdonald Perry A. (Culver City CA) Larson Lawrence E. (Bethesda MD) Case Michael G. (Thousand Oaks CA) Matloubian Mehran (Encino CA) Chen Mary Y. (Agoura CA) Rensch David B. (Thousand Oaks CA), Monolithic microwave integrated circuit and method.
  • Stockton Ronald J. (Nederland CO) Munson Robert E. (Boulder CO), Monolithic microwave integrated circuit with integral array antenna.
  • Bayraktaroglu Burhan (Plano TX), Monolithic microwave transmitter/receiver.
  • Krause Robert, Monolithic optical emitter-detector.
  • Thornton Robert L. (East Palo Alto CA) Paoli Thomas L. (Los Altos CA), Monolithic two dimensional waveguide coupled cavity laser/modulator.
  • Rostoker Michael D. (San Jose CA), Multi-chip semiconductor arrangements using flip chip dies.
  • Sevier Richard G. ; Andersen Eric L., Multi-direction optical data port.
  • Corman David Warren ; Torkington Richard Scott ; Ma Stephen Chih-Hung ; Cook Dean Lawrence ; Brice-Heames Kenneth, Multi-substrate radio-frequency circuit.
  • Richard R. King ; Nasser H. Karam ; Moran Haddad, Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications.
  • Curran Patrick A. (Plano TX) Wilson Susan R. (Richardson TX), Multilayer semi-insulating film for hermetic wafer passivation and method for making same.
  • Yano Yoshihiko,JPX ; Noguchi Takao,JPX, Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film.
  • Hovel Harold J. (Katonah NY), Multiple bandgap solar cell on transparent substrate.
  • Hawrylo Frank Z. (Trenton NJ), Multiple double heterojunction buried laser device.
  • Chaum ; Erik, Multiple path configuration for a laser interferometer.
  • Collins Douglas A. ; McGill Thomas C. ; Papa George O., Near real-time extraction of deposition and pre-deposition characteristics from rotating substrates and control of a de.
  • Yamamoto Mitsuru,JPX, Network system for performing bidirectional transmission, and node device and transmission control method used in the s.
  • Verkade John G. (Ames IA), New types of organometallic reagents and catalysts for asymmetric synthesis.
  • Imai Hideaki (Fuji JPX) Miyata Kunio (Kyoto JPX) Hirai Tadahiko (Koganei JPX), Nitride based semiconductor device and manufacture thereof.
  • Nakamura Shuji,JPX ; Nagahama Shinichi,JPX ; Iwasa Naruhito,JPX ; Kiyoku Hiroyuki,JPX, Nitride semiconductor light-emitting device.
  • Nunoue Shinya,JPX ; Yamamoto Masahiro,JPX, Nitride-compound semiconductor device.
  • Cambou Bertrand F. (Mesa AZ) Liaw H. Ming (Scottsdale AZ) Tomozane Mamoru (Scottsdale AZ), Non-silicon and silicon bonded structure and method of manufacture.
  • Endo Nobuhiro (Tokyo JPX), Non-volatile semiconductor memory device having a metal-insulator-semiconductor gate structure and method for fabricatin.
  • Kawakubo Takashi,JPX ; Abe Kazuhide,JPX, Nonvolatile semiconductor memory device and method for manufacturing same.
  • Stoner Brian R. (Raleigh NC) Glass Jeffrey T. (Apex NC) Hooke William M. (Chapel Hill NC) Williams Bradley E. (Worthington OH), Nucleation enhancement for chemical vapor deposition of diamond.
  • Grudkowski Thomas W. (Glastonbury CT) Cullen Donald E. (Manchester CT), Nyquist frequency bandwidth hact memory.
  • Mehrgardt Soenke (March-Meuershausen DEX) Blossfeld Lothar (Freiburg-Hochdorf DEX), Offset-compensated hall sensor having plural hall detectors having different geometrical orientations and having switcha.
  • Nashimoto Keiichi,JPX ; Watanabe Masao,JPX ; Moriyama Hiroaki,JPX ; Nakamura Shigetoshi,JPX ; Osakabe Eisuke,JPX ; Morikawa Takashi,JPX, Opical waveguide device.
  • Vasudev Prahalad K. (Santa Monica CA), Opposed dual-gate hybrid structure for three-dimensional integrated circuits.
  • Holder James D. (Huntsville AL), Optic-coupled integrated circuits.
  • Van De Voorde Ingrid Zulma Benoit,BEX ; Van Der Plas Gert,BEX, Optical amplifier combiner arrangement and method for upstream transmission realized thereby.
  • May Paul (Cambridge GBX) Davis Gillian Margaret (Oxfordshire GBX), Optical apparatus.
  • Butler Michael A. ; Ricco Antonio J. ; Sinclair Michael B. ; Senturia Stephen D., Optical apparatus for forming correlation spectrometers and optical processors.
  • Wu Kuang-Yi ; Liu Jian-Yu ; Chen Yen-Chen,TWX, Optical attenuator using polarization modulation and a feedback controller.
  • Giles Clinton R. (Middletown NJ) Li Tingye (Rumson NJ) Wood Thomas H. (Highlands NJ), Optical communication by injection-locking to a signal which modulates an optical carrier.
  • Ho Steven H. (Urbana IL) Conforti Evandro (Campinas BRX) Kang Sung M. (Champaign IL), Optical communications and interconnection networks having opto-electronic switches and direct optical routers.
  • Murray Dale D. (Mount Joy PA) Reitz Paul R. (Palmyra PA), Optical delay switch and variable delay system.
  • Chandonnet Alain,CAX ; Fougeres Andre,CAX ; Larose Gilles,CAX ; Painchaud Yves,CAX, Optical device employing edge-coupled waveguide geometry.
  • Doi Masato (Kanagawa JPX) Narui Hironobu (Kanagawa JPX) Matsuda Osamu (Kanagawa JPX) Sahara Kenji (Kanagawa JPX), Optical device having a light emitter and a photosensor on the same optical axis.
  • Maruska H. Paul (Acton MA), Optical heterodyne receiver for fiber optic communications system.
  • Yoshida Yoshio (Nara JPX) Kurata Yukio (Tenri JPX) Tsuji Shigeki (Higashihiroshima JPX), Optical information reproducing apparatus.
  • Levi Anthony F. J. (Summit NJ) McCall Samuel L. (Chatham NJ) Slusher Richart E. (Lebanon NJ), Optical integrated circuit designed to operate by use of photons.
  • Okada Kuniaki (Tenri JPX) Minami Kouji (Gose JPX) Miki Renzaburo (Tenri JPX) Yamamoto Hiroyuki (Tenri JPX) Yoshida Yoshio (Nara JPX) Kurata Yukio (Tenri JPX), Optical integrated circuit having light detector.
  • Ota Takeshi (Kanagawa JPX), Optical link amplifier and a wavelength multiplex laser oscillator.
  • Wisseman Philip Henry ; Shih Chung-Ching, Optical loop signal processing using reflection mechanisms.
  • Henmi Naoya,JPX, Optical network, optical division and insertion node and recovery system from network failure.
  • Frigo Nicholas J., Optical node system for a ring architecture and method thereof.
  • Yano Yutaka,JPX, Optical regenerative repeater.
  • O'Brien Stephen ; Zhao Hanmin ; Major ; Jr. Jo S., Optical semiconductor device with diffraction grating structure.
  • Gorecki Christophe,FRX, Optical sensor on a silicon substrate and application for the in situ measurement of a fluorescent marker in the small bronchia.
  • Matsuda Manabu (Kawasaki JPX), Optical switching device.
  • Nashimoto Keiichi,JPX ; Haga Koichi,JPX ; Watanabe Masao,JPX ; Moriyama Hiroaki,JPX ; Morikawa Takashi,JPX ; Nakamura Shigetoshi,JPX, Optical waveguide device and manufacturing method thereof.
  • Hunsperger Robert G. (Newark DE) Maltenfort Andrew J. (New Castle DE), Optical wavelength division multiplexing/demultiplexing system.
  • Takehito Tsukamoto JP; Koichi Kumai JP; Takao Minato JP; Shigeru Hirayama JP; Masayuki Ode JP, Optical wiring layer, optoelectric wiring substrate, mounted substrate, and methods for manufacturing the same.
  • Tsubota Takashi (Tokyo JPX), Opto-semiconductor device and method of fabrication of the same.
  • Conley Jerry J. (Waseca MN), Optoelectronic active circuit element.
  • Mozer Albrecht (Bietigheim-Bissingen DEX), Optoelectronic arrangement.
  • Verdiell Jean-Marc, Optoelectronic assembly and method of making the same.
  • Hammer Jacob M. (Princeton NJ), Optoelectronic interconnections for integrated circuits.
  • Jean-Luc Goudard FR, Optoelectronic module and method for stabilizing its temperature.
  • Idaka Yukio (Nara JPX) Yamaguchi Shuichiroh (Hirakata JPX) Matsumoto Takeshi (Neyagawa JPX), Optoelectronic relay circuit having charging path formed by a switching transistor and a rectifying diode.
  • Koizumi Masumi,JPX ; Jiang Yichao,JPX ; Nomoto Tsutomu,JPX ; Abiko Ichimatsu,JPX, Organic electroluminescent light-emitting array and optical head assembly.
  • Shi Song Q. (4521 E. Gold Poppy Way Phoenix AZ 85283), Organometallic complexes with built-in fluorescent dyes for use in light emitting devices.
  • Shi Song Q. (Phoenix AZ) So Franky (Tempe AZ), Organometallic fluorescent complex polymers for light emitting applications.
  • Nashimoto Keiichi (Minami Ashigara JPX), Oriented conductive film and process for preparing the same.
  • Jia Quanxi ; Arendt Paul N., Oriented conductive oxide electrodes on SiO2/Si and glass.
  • Nashimoto Keiichi (Kanagawa JPX), Oriented ferroelectric thin film.
  • Nashimoto Keiichi,JPX, Oriented ferroelectric thin film element.
  • Wessels Bruce W. ; Nystrom Michael J., Oriented niobate ferroelectric thin films for electrical and optical devices.
  • Wessels Bruce W. ; Nystrom Michael J., Oriented niobate ferroelectric thin films for electrical and optical devices and method of making such films.
  • Lewis Meirion F. (Worcs GB2) Wight David R. (Worcs GB2), Oscillator.
  • Yano Yoshihiko,JPX ; Noguchi Takao,JPX, Oxide thin film, electronic device substrate and electronic device.
  • Summerfelt Scott R. (Dallas TX), Pb/Bi-containing high-dielectric constant oxides using a non-P/Bi-containing perovskite as a buffer layer.
  • Summerfelt Scott R. (Dallas TX), Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer.
  • Nakashima Hisao (Tokorozawa JPX) Umeda Jun-ichi (Hachioji JPX) Kuroda Takao (Kokubunji JPX) Kajimura Takashi (Hachioji JPX) Matsuda Hiroshi (Hachioji JPX), Phase-locked semiconductor laser device.
  • Imbach Jean-Louis,FRX ; Gosselin Gilles,FRX ; Rayner Bernard,FRX, Phosphotriester oligonucleotides, amidites and method of preparation.
  • Shinohara Mahito,JPX ; Kikuchi Shin,JPX, Photoelectric conversion apparatus.
  • Tomich John L., Photonic home area network fiber/power insertion apparatus.
  • Ho Seng-Tiong, Photonic-well Microcavity light emitting devices.
  • Bronstein-Bonte Irena Y. (Newton MA) Fischer Alan B. (Cambridge MA), Photovoltaic cell.
  • Adler Alan D. (West Redding CT), Photovoltaic cell with enhanced power output.
  • Kubota Yuichi,JPX ; Nishi Kazuo,JPX, Photovoltaic device.
  • Kishimoto Katsushi,JPX ; Nakano Takanori,JPX ; Sannomiya Hitoshi,JPX ; Nomoto Katsuhiko,JPX, Photovoltaic device and process for producing the same.
  • Ella Juha,FIX, Piezoelectric resonator structures with a bending element performing a voltage controlled switching function.
  • Lakin Kenneth Meade, Piezoelectric resonators on a differentially offset reflector.
  • Yamada Akira,JPX ; Maeda Chisako,JPX ; Umemura Toshio,JPX ; Uchikawa Fusaoki,JPX ; Misu Koichiro,JPX ; Wadaka Shusou,JPX ; Ishikawa Takahide,JPX, Piezoelectric thin film device.
  • Pan Jing-Jong (Melbourne FL), Plural frequency oscillator employing multiple fiber-optic delay line.
  • Ramesh Ramamoorthy (Tinton Falls NJ), Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes.
  • Howe Roger T. ; Franke Andrea ; King Tsu-Jae, Polycrystalline silicon germanium films for forming micro-electromechanical systems.
  • Kramer Kane N. (Oaktree Lodge ; Arkley Barnet ; Hertfordshire GBX) Campbell James S. (7 ; Alwyne Place London ; N.1. GBX), Portable data processing and storage system.
  • Beranek Mark W. ; Charles George E. ; Foley Barbara M. ; Lilienthal ; II Peter F. ; Shahid Muhammed A., Precision alignment of optoelectronic devices.
  • Nause Jeffrey E. ; Hill D. Norman ; Pope Stephen G., Pressurized skull crucible for crystal growth using the Czochralski technique.
  • Matsuda Yoshinobu (Tsukuba JPX) Hata Masahiko (Tsuchiura JPX) Fukuhara Noboru (Tsukuba JPX) Ishihara Toshio (Tsukuba JPX), Process for crystal growth of III-V group compound semiconductor.
  • McKee Rodney A. (Kingston TN) Walker Frederick J. (Oak Ridge TN), Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process.
  • McKee Rodney A. (Kingston TN) Walker Frederick J. (Oak Ridge TN), Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process.
  • Schindler Gunther,DEX ; Hartner Walter,DEX ; Mazure Carlos,DEX ; Solayappan Narayan ; Joshi Vikram ; Derbenwick Gary F., Process for fabricating layered superlattice materials and AB0.sub.3 type metal oxides without exposure to oxygen at hig.
  • James F. Ziegler, Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing.
  • Feng-Yi Huang, Process for forming a silicon-germanium base of a heterojunction bipolar transistor.
  • Akasaki Isamu (Nagoya JPX) Sawaki Nobuhiko (Nagoya JPX), Process for growing III-V compound semiconductors on sapphire using a buffer layer.
  • McKee Rodney Allen (Kingston TN) Walker Frederick Joseph (Oak Ridge TN), Process for growing a film epitaxially upon a MgO surface.
  • McKee Rodney A. (Kingston TN) Walker Frederick J. (Oak Ridge TN), Process for growing a film epitaxially upon an oxide surface and structures formed with the process.
  • Manasevit Harold M. (Anaheim CA), Process for improving the quality of epitaxial silicon films grown on insulating substrates utilizing oxygen ion conduct.
  • Swartz Scott L. (Dublin OH) Melling Peter J. (Worthington OH), Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates.
  • D'Asaro Lucian Arthur ; Goossen Keith Wayne ; Hui Sanghee Park ; Tseng Betty J. ; Walker James Albert, Process for manufacture of composite semiconductor devices.
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  • Onga Shinji (Fujisawa JPX) Okada Takako (Tokyo JPX) Inoue Kouichirou (Yokohama JPX) Matsushita Yoshiaki (Yokohama JPX) Yamabe Kikuo (Yokohama JPX) Hazama Hiroaki (Yokohama JPX) Okano Haruo (Tokyo JPX, Semiconductor device with monocrystalline gate insulating film.
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  • Sone Shuji,JPX ; Kato Yoshitake,JPX, Thin film capacitor including perovskite-type oxide layers having columnar structure and granular structure.
  • Sasaki Hajime (Itami JPX) Morikawa Hiroaki (Itami JPX) Satoh Kazuhiko (Itami JPX) Deguchi Mikio (Itami JPX), Thin film solar cell and production method therefor.
  • Satoh Toshifumi (Nara JPX) Adachi Hideaki (Osaka JPX) Ichikakwa Yo (Osaka JPX) Setsune Kentaro (Osaka JPX), Thin-film conductor and method of fabricating the same.
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  • Lehovec Kurt (Los Angeles CA), Tunnel diode load for ultra-fast low power switching circuits.
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  • Kinsman Larry D., Vertically mountable semiconductor device and methods.
  • Newns Dennis Merton, Very thin film capacitor for dynamic random access memory (DRAM).
  • Ikeda Kyoichi (Tokyo JPX) Watanabe Tetsuya (Tokyo JPX) Higashino Yasushi (Tokyo JPX), Vibratory transducer.
  • Cornett Kenneth D. (Albuquerque NM) Ramakrishnan E. S. (Albuquerque NM) Shapiro Gary H. (Albuquerque NM) Caldwell Raymond M. (Albuquerque NM) Howng Wei-Yean (Albuquerque NM), Voltage variable capacitor.
  • Koch Thomas L. (Holmdel NJ), Wavelength division multiplexed optical communication transmitters.
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  • Pan Jing-Jong, Wavelength stabilization of laser source using fiber Bragg grating feedback.
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    81. Winkler, Jereld Lee, Method for forming conformal carbon films, structures conformal carbon film, and system of forming same.
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    90. Kato, Richika; Nakano, Ryu, Method for protecting layer by forming hydrocarbon-based extremely thin film.
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    92. Haukka, Suvi; Shero, Eric James; Alokozai, Fred; Li, Dong; Winkler, Jereld Lee; Chen, Xichong, Method for treatment of deposition reactor.
    93. Ahn,Kie Y.; Forbes,Leonard, Method including forming gate dielectrics having multiple lanthanide oxide layers.
    94. Zaitsu, Masaru, Method of atomic layer etching using functional group-containing fluorocarbon.
    95. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.
    96. Ahn, Kie Y.; Forbes, Leonard, Method of fabricating an apparatus having a lanthanum-metal oxide dielectric layer.
    97. Ahn, Kie Y.; Forbes, Leonard, Method of forming a film containing dysprosium oxide and hafnium oxide using atomic layer deposition.
    98. Atanackovic,Petar, Method of forming a rare-earth dielectric layer.
    99. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.
    100. Ahn, Kie Y.; Forbes, Leonard, Method of forming apparatus having oxide films formed using atomic layer deposition.
    101. Takahashi,Tsuyoshi; Shinriki,Hiroshi; Kubo,Kazumi, Method of forming dielectric film.
    102. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.
    103. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.
    104. Haukka, Suvi; Huotari, Hannu, Method of producing thin films.
    105. Ahn, Kie Y.; Forbes, Leonard, Methods for atomic-layer deposition.
    106. Ahn,Kie Y.; Forbes,Leonard, Methods for atomic-layer deposition of aluminum oxides in integrated circuits.
    107. Kohen, David; Profijt, Harald Benjamin, Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures.
    108. Ahn,Kie Y.; Forbes,Leonard, Methods for forming a lanthanum-metal oxide dielectric layer.
    109. Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.
    110. Ahn, Kie Y.; Forbes, Leonard, Methods of forming a dielectric containing dysprosium doped hafnium oxide.
    111. Ahn, Kie Y.; Forbes, Leonard, Methods of forming an insulating metal oxide.
    112. Yoon,Kyoung Ryul; Choi,Han Mei; Lee,Seung Hwan; Choi,Dae Sik; Park,Ki Yeon; Kim,Young Sun; Kim,Sung Tae; You,Cha Young, Methods of forming dielectric structures and capacitors.
    113. Tolle, John, Methods of forming films including germanium tin and structures and devices including the films.
    114. Margetis, Joe; Tolle, John, Methods of forming highly p-type doped germanium tin films and structures and devices including the films.
    115. Margetis, Joe; Tolle, John, Methods of forming silicon germanium tin films and structures and devices including the films.
    116. Ahn, Kie Y.; Forbes, Leonard, Methods of forming titanium silicon oxide.
    117. Ahn, Kie Y.; Forbes, Leonard, Methods of forming zirconium aluminum oxide.
    118. Yoo, Dong-chul; Lee, Myoung-bum; Park, Young-geun; Choi, Han-mei; Oh, Se-hoon; Kim, Byong-ju; An, Kyong-won; Jo, Seon-ho, Methods of manufacturing semiconductor devices including metal oxide layers.
    119. Lee, Jae Suk, Methods to reduce stress on a metal interconnect.
    120. Ahn,Kie Y., Methods, systems, and apparatus for uniform chemical-vapor depositions.
    121. Ahn, Kie Y.; Forbes, Leonard, Nanolaminates of hafnium oxide and zirconium oxide.
    122. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan, NbMC layers.
    123. Milligan, Robert Brennan; Alokozai, Fred, Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same.
    124. Richter, Hans Jürgen; Harkness, IV, Samuel Dacke, Photovoltaic device with an up-converting quantum dot layer and absorber.
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    129. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
    130. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
    131. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
    132. Winkler, Jereld Lee, Pulsed remote plasma method and system.
    133. Shero, Eric; Halpin, Michael; Winkler, Jerry, Radiation shielding for a substrate holder.
    134. Ahn, Kie Y.; Forbes, Leonard, Ruthenium for a dielectric containing a lanthanide.
    135. Ahn, Kie Y.; Forbes, Leonard, Ruthenium for a dielectric containing a lanthanide.
    136. Ahn, Kie Y.; Forbes, Leonard, Ruthenium layer for a dielectric layer containing a lanthanide oxide.
    137. Zhu, Chiyu, Selective film deposition method to form air gaps.
    138. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min, Semiconductor device and manufacturing method thereof.
    139. Raisanen, Petri; Givens, Michael; Verghese, Mohith, Semiconductor device dielectric interface layer.
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    143. Lee,Jae Suk, Semiconductor devices to reduce stress on a metal interconnect.
    144. Shero, Eric; Verghese, Mohith E.; White, Carl L.; Terhorst, Herbert; Maurice, Dan, Semiconductor processing reactor and components thereof.
    145. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.
    146. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.
    147. Xie, Qi; Machkaoutsan, Vladimir; Maes, Jan Willem, Semiconductor structure and device and methods of forming same using selective epitaxial process.
    148. Demkov,Alexander A.; Taylor, Jr.,William J., Semiconductor structure having a metallic buffer layer and method for forming.
    149. Khalid, Radouane, Semiconductor substrate surface preparation method.
    150. Arai, Izumi, Single-and dual-chamber module-attachable wafer-handling chamber.
    151. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.
    152. Weeks, Keith Doran, Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same.
    153. Tolle, John, Structures and devices including germanium-tin films and methods of forming same.
    154. Ahn, Kie Y.; Forbes, Leonard, Structures containing titanium silicon oxide.
    155. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk, Susceptor for semiconductor substrate processing apparatus.
    156. Dunn, Todd; Alokozai, Fred; Winkler, Jerry; Halpin, Michael, Susceptor heater and method of heating a substrate.
    157. Dunn, Todd; White, Carl; Halpin, Michael; Shero, Eric; Winkler, Jerry, Susceptor heater shim.
    158. Tang, Fu; Givens, Michael Eugene; Xie, Qi; Raisanen, Petri, System and method for gas-phase sulfur passivation of a semiconductor surface.
    159. Lawson, Keith R.; Givens, Michael E., Systems and methods for dynamic semiconductor process scheduling.
    160. Sarin, Michael Christopher; Mendez, Rafael; Bartlett, Gregory M.; Hill, Eric; Lawson, Keith R.; Rosser, Andy, Systems and methods for mass flow controller verification.
    161. Ahn, Kie Y.; Forbes, Leonard, Systems with a gate dielectric having multiple lanthanide oxide layers.
    162. Harkness, IV, Samuel Dacke; Richter, Hans Jürgen, Thin film template for fabrication of two-dimensional quantum dot structures.
    163. Ahn, Kie Y.; Forbes, Leonard, Titanium aluminum oxide films.
    164. Forbes, Leonard; Cloud, Eugene H.; Ahn, Kie Y., Transmission lines for CMOS integrated circuits.
    165. Coomer, Stephen Dale, Variable adjustment for precise matching of multiple chamber cavity housings.
    166. Shugrue, John Kevin, Variable conductance gas distribution apparatus and method.
    167. Schmotzer, Michael; Whaley, Shawn, Variable gap hard stop design.
    168. Ahn, Kie Y.; Forbes, Leonard, Zirconium titanium oxide films.
    169. Ahn,Kie Y.; Forbes,Leonard, Zr--Sn--Ti--O films.
    170. Ahn, Kie Y.; Forbes, Leonard, Zr-Sn-Ti-O films.
    171. Ahn, Kie Y.; Forbes, Leonard, Zr-Sn-Ti-O films.
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