최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0885409 (2001-06-21) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 171 인용 특허 : 500 |
A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monoc
A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monocrystalline high dielectric constant oxide on the seed layer, where providing a substrate includes providing a substrate having formed thereon a silicon oxide, and wherein forming by atomic layer deposition a seed layer further includes depositing a layer of a metal oxide onto a surface of the silicon oxide, flushing the layer of metal oxide with an inert gas, and reacting the metal oxide and the silicon oxide to form a monocrystalline silicate.
A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monoc
A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monocrystalline high dielectric constant oxide on the seed layer, where providing a substrate includes providing a substrate having formed thereon a silicon oxide, and wherein forming by atomic layer deposition a seed layer further includes depositing a layer of a metal oxide onto a surface of the silicon oxide, flushing the layer of metal oxide with an inert gas, and reacting the metal oxide and the silicon oxide to form a monocrystalline silicate. s set forth in claim 11 wherein the final polishing operation removes significantly less water material from the back surface than the front surface. 16. A method as set forth in claim 11 further comprising the step of applying a rinsing fluid between the pads after polishing is substantially complete so that a resulting solution including the slurry and the rinsing fluid is alkaline. 17. A method as set forth in claim 11 further comprising the step of applying a rinsing fluid between the pads after polishing is substantially complete so that a resulting solution including the slurry and the rinsing fluid has a buffered pH between about 7.8 and about 11.8. 18. A method as set forth in claim 11 further comprising the operation of applying pressure to the first and second pads and thereby to the wafer, wherein the operation of providing a polishing apparatus includes providing the second pad having a significantly larger size than the wafer, the back surface of the water mounted to be translatable and rotatable relative to the second pad, wherein the rotating step includes rotating and moving the wafer such that substantially all of the back surface of the wafer is substantially continuously moving relative to the second pad so that deviations in the second pad do not substantially affect the flatness of the front surface and such that the front surface and back surface are maintained substantially parallel after final polishing. 19. A method as set forth in claim 18 wherein during the rotation step substantially all of the wafer remains between the first and second pads so that the wafer is evenly polished. 20. A method as set forth in claim 19 wherein the operation of providing a polishing apparatus includes providing a second pad which has grooves for receiving polishing slurry to inhibit unstable hydrodynamic lubrication between the second pad and the back surface. 21. A method as set forth in claim 20 wherein the operation of providing a polishing apparatus includes providing a first pad which is a finish-type polishing pad. 22. A method as set forth in claim 11 further comprising the step of selecting rotation speeds of the wafer carrier, the first pad and the second pad such that velocity of the back surface relative to the second pad is less than velocity of the front surface relative to the first pad to inhibit unstable hydrodynamic lubrication between the se
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