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A diffracting portion is composed of optical elements including an optical element, and diffracts light. A drive unit rotates the optical element. An angle detector detects a rotation angle of the optical element. A reference wavelength light source includes a light source and an absorption cell sea

A diffracting portion is composed of optical elements including an optical element, and diffracts light. A drive unit rotates the optical element. An angle detector detects a rotation angle of the optical element. A reference wavelength light source includes a light source and an absorption cell sealed with a plurality of gasses of different kinds having mutually different absorption line wavelengths, and emits the reference light of a specific wavelength depended on the absorption cell toward the diffracting portion. A reference photodetector converts a diffracted light from the diffracting portion into an electric signal. A signal processor receives a rotation angle issued by the angle detector when detecting a predetermined value of the electric signal, and determines the predetermined rotation angle corresponding to the specific wavelength determined depending on the plurality of gases.

대표청구항 ▼

A diffracting portion is composed of optical elements including an optical element, and diffracts light. A drive unit rotates the optical element. An angle detector detects a rotation angle of the optical element. A reference wavelength light source includes a light source and an absorption cell sea

A diffracting portion is composed of optical elements including an optical element, and diffracts light. A drive unit rotates the optical element. An angle detector detects a rotation angle of the optical element. A reference wavelength light source includes a light source and an absorption cell sealed with a plurality of gasses of different kinds having mutually different absorption line wavelengths, and emits the reference light of a specific wavelength depended on the absorption cell toward the diffracting portion. A reference photodetector converts a diffracted light from the diffracting portion into an electric signal. A signal processor receives a rotation angle issued by the angle detector when detecting a predetermined value of the electric signal, and determines the predetermined rotation angle corresponding to the specific wavelength determined depending on the plurality of gases. tance from said surface, and having a first and a second ends; first and second trenches extending from said surface respectively as far as said first and second ends of said buried channel, and being in fluid connection with said buried channel; a reservoir region formed on the surface of the semiconductor material body, extending above said surface and defining first and second reservoirs connected to said first and second trenches, respectively; and a heating element arranged between said surface and said reservoir region, above said buried channel. 5. The integrated microreactor according to claim 4, further comprising an insulating material region extending between said surface and said reservoir region and surrounding said heating element. 6. The integrated microreactor according to claim 5, further comprising a protective region arranged between said insulating material region and said reservoir region. 7. The integrated microreactor according to claim 6, wherein the reservoir region is of a first resist and the protective region is of a second resist, and in that one of said first and second resists is of a negative type, and the other of said first and second resists is of a positive type. 8. The integrated microreactor according to claim 1 wherein said first resist is SU8. 9. The integrated microreactor according to claim 1, wherein said first resist is a photosensitive dry resist. 10. A structure comprising: a semiconductor material body; a buried channel formed in the semiconductor material body and at a distance from a surface of the semiconductor material body; a first reservoir formed on the surface of the semiconductor material body; a first trench formed on the semiconductor material body, extending from the first reservoir to a first end of the buried channel; a second trench formed on the semiconductor material body, extending from the surface of the semiconductor material body to a second end of the buried channel; a heating element formed on the semiconductor material body adjacent to the buried channel; and a sensing electrode structure, formed on the semiconductor material body. 11. The structure of claim 10, further comprising a second reservoir, formed on the surface of the semiconductor material body, where the second trench extends from the second reservoir on the surface of the semiconductor material body to a second end of the buried channel. 12. The structure of claim 11, further comprising a sensing electrode structure, formed on the semiconductor material body and inside the second reservoir. 13. A process for the fabrication of an integrated microreactor, comprising: forming a semiconductor material body having a surface and a buried channel extending at a distance from said surface and having first and second ends; forming first and second trenches extending from said surface as far as, respectively, said first and said second ends of said buried channel and being in fluid connection with said buried channel; and above said surface, forming first and second reservoirs respectively connected to said first and second trenches in a reservoir layer of a first resist. 14. The process according to claim 13, wherein, before said step of forming first and second reservoirs, the step is carried out of forming a heating element surrounded by an insulating layer and extending above said surface, over said buried channel. 15. The process according to claim 14, wherein said step of forming first and second reservoirs is carried out before said step of forming first and second trenches. 16. The process according to claim 15, wherein, before said step of forming first and second reservoirs, the following step is carried out: forming a protective layer above said surface; and, after said step of forming first and second reservoirs, the following steps are carried out: selectively removing said protective layer as far as said surface, above said ends of said buried channel, to form first and second openings; and digging said first and said second trenches, in an aligned way to said first and second openings. 17. The process according to claim 16, wherein said protective layer comprises a second resist, and one of said first and second resists is of a negative type, and the other of said first and second resists is of a positive type. 18. The process according to claim 13, wherein said first resist is SU8. 19. The process according to claim 13, wherein said step of forming first and second reservoirs is carried out after said step of forming first and second trenches. 20. The process according to claim 19, wherein, before said step of forming first and second reservoirs, the following steps are carried out: forming a protective layer above said surface; selectively removing said protective layer as far as said surface, above said ends of said buried channel, to form first and second openings; and digging said first and second trenches in an aligned way to said first and second openings. 21. The process according to claim 13, wherein said first resist is a photosensitive dry resist. 22. The process according to claim 17, wherein said step of forming first and second reservoirs comprises the following steps: applying a reservoir layer by lamination and thermocompression; and selectively removing said reservoir layer. 23. A method, comprising: introducing a fluid from a first reservoir into a first trench, the first reservoir and first trench being integrated in a semiconductor body, the first trench being formed in, and defined by a resist layer formed on the surface of the semiconductor material body; introducing the fluid from the first trench into a buried channel, the buried channel extending in the semiconductor material body at a distance from a surface of the semiconductor material body, the first trench extending from the reservoir on the surface of the semiconductor material body to a first end of the buried channel; heating the fluid within the buried channel; and cooling the fluid within the buried channel. 24. A method, comprising: introducing a fluid from a first reservoir into a first trench, the first reservoir and first trench being integrated in a semiconductor body; introducing the fluid from the first trench into a buried channel, the buried channel extending in the semiconductor material body at a distance from a surface of the semiconductor material body, the first trench extending from the reservoir on the surface of the semiconductor material body to a first end of the buried channel; heating the fluid within the buried channel, by; passing an electric current through a heating element arranged in the semiconductor material body on top of the buried channel; and cooling the fluid within the buried channel. 25. The method of claim 23, further including the step of extracting the fluid from the buried channel into a second reservoir via a second trench, the second reservoir and second trench being integrated in the semiconductor body, the second trench extending from the second reservoir on the surface of the semiconductor material body as far as a second end of the buried channel. 26. A method, comprising: introducing a fluid from a first reservoir into a first trench, the first reservoir and first trench being integrated in a semiconductor body; introducing the fluid from the first trench into a buried channel, the buried channel extending in the semiconductor material body at a distance from a surface of the semiconductor material body, the first trench extending from the reservoir on the surface of the semiconductor material body to a first end of the buried channel; heating the fluid within the buried channel; and cooling the fluid within the buried channel; and detecting a desired product within the fluid, where the detection step is performed by the use of a sensing electrode structure, the sensing electrode structure being integrated in the semiconductor material body and in contact with the fluid. 27. The method according to claim 23 further including: repeating the heating and cooling steps a plurality of times to achieve a desired reaction in biological matter within the fluid. 28. The method according to claim 23, wherein the cooling step is carried out by: terminating the heating of the fluid; and permitting the fluid to cool towards the ambient. 29. The method according to claim 23, wherein the cooling step is carried out by: terminating the heating of the fluid; and drawing heat from the fluid using a heat transfer mechanism. 30. An integrated microreactor comprising: a semiconductor material body having a surface; a buried channel extending in said semiconductor material body at a distance from said surface, and having a first and a second ends; first and second trenches extending from said surface respectively as far as said first and second ends of said buried channel, and being in fluid connection with said buried channel; a reservoir region, extending above said surface and defining first and second reservoirs connected to said first and second trenches, respectively; and a sensing electrode structure extending above said surface and inside said second reservoir. said curved mounting surface is located at a central axis of said optics mounting housing. 11. The apparatus of claim 7 further comprising a washer having a curved surface and a flat surface and a fastener, said fastener engaging said flat surface of said washer to bring said curved surface of said washer into engagement with a curved outer surface of said bracket to connect said bracket to said housing. 12. The apparatus of claim 7 further comprising an internally threaded fastener constrained in said channel and an externally threaded fastener that engages said bracket, extends through said slot and engages said internally threaded fastener to connect said bracket to said housing. 13. An apparatus for mounting optics of a light curtain, comprising: a) a light curtain optics housing including a pair of opposed flanges that define a curved mounting surface and a channel; b) a mounting bracket connected to said curved mounting surface of said pair of opposing flanges, said mounting bracket including a curved inner surface, a curved outer surface and an adjustment slot; c) an internally threaded fastener constrained within said channel; d) a washer having a curved surface and a flat surface, said curved surface of said washer engaging said curved outer surface of said mounting bracket; and e) an externally threaded fastener that engages said flat surface of said washer, extends through said washer and said slot and engages said internally threaded fastener to connect said bracket to said housing. 14. The apparatus of claim 13 wherein a center of a radius of curvature of said curved mounting surface is located at a central axis of said optics mounting housing. 15. A method of mounting and aligning optics of a light curtain, comprising: a) loosely connecting a curved mounting surface of a light curtain housing to a curved mounting surface of a mounting bracket; and b) rotating said curved mounting surface of said light curtain housing with respect to said curved mounting surface of a mounting bracket; and c) tightening a connection between said curved mounting surface of said light curtain housing to said curved mounting surface of said mounting bracket.