IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0083051
(2002-02-26)
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발명자
/ 주소 |
- Ahn, Kie Y.
- Forbes, Leonard
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출원인 / 주소 |
|
대리인 / 주소 |
Schwegman, Lundberg, Woessner & Kluth, P.A.
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인용정보 |
피인용 횟수 :
0 인용 특허 :
29 |
초록
▼
An integrated circuit includes at least one porous silicon oxycarbide (SiOC) insulator, which provides good mechanical strength and a low dielectric constant (e.g., εR<2) for minimizing parasitic capacitance. The insulator provides IC isolation, such as between circuit elements, between interconnect
An integrated circuit includes at least one porous silicon oxycarbide (SiOC) insulator, which provides good mechanical strength and a low dielectric constant (e.g., εR<2) for minimizing parasitic capacitance. The insulator provides IC isolation, such as between circuit elements, between interconnection lines, between circuit elements and interconnection lines, or as a passivation layer overlying both circuit elements and interconnection lines. The low dielectric constant silicon oxycarbide isolation insulator of the present invention reduces the parasitic capacitance between circuit nodes. As a result, the silicon oxycarbide isolation insulator advantageously provides reduced noise and signal crosstalk between circuit nodes, reduced power consumption, faster circuit operation, and minimizes the risk of potential timing faults.
대표청구항
▼
An integrated circuit includes at least one porous silicon oxycarbide (SiOC) insulator, which provides good mechanical strength and a low dielectric constant (e.g., εR<2) for minimizing parasitic capacitance. The insulator provides IC isolation, such as between circuit elements, between interconnect
An integrated circuit includes at least one porous silicon oxycarbide (SiOC) insulator, which provides good mechanical strength and a low dielectric constant (e.g., εR<2) for minimizing parasitic capacitance. The insulator provides IC isolation, such as between circuit elements, between interconnection lines, between circuit elements and interconnection lines, or as a passivation layer overlying both circuit elements and interconnection lines. The low dielectric constant silicon oxycarbide isolation insulator of the present invention reduces the parasitic capacitance between circuit nodes. As a result, the silicon oxycarbide isolation insulator advantageously provides reduced noise and signal crosstalk between circuit nodes, reduced power consumption, faster circuit operation, and minimizes the risk of potential timing faults. ilver movements in Ag2Te thin films: switching and memory effects, Thin Solid Films 57 (1979) 49-54. Uemura, O.; Kameda, Y.; Kokai, S.; Satow, T., Thermally induced crystallization of amorphous Ge0.4Se0.6, J. Non-Cryst. Solids 117-118 (1990) 219-221. Uttecht, R.; Stevenson, H.; Sie, C.H.; Griener, J.D.; Raghavan, K.S., Electric field induced filament formation in As-Te-Ge glass, J. Non-Cryst. Solids 2 (1970) 358-370. Viger, C.; Lefrancois, G.; Fleury, G., Anomalous behaviour of amorphous selenium films, J. Non-Cryst. Solids 33 (1976) 267-272. Vodenicharov, C.; Parvanov,S.; Petkov,P., Electrode-limited currents in the thin-film M-GeSe-M system, Mat. Chem. And Phys. 21 (1989) 447-454. Wang, S.-J.; Misium, G.R.; Camp, J.C.; Chen, K.-L.; Tigelaar, H.L., High-performance Metal/silicide antifuse, IEEE electron dev. Lett. 13 (1992)471-472. Weirauch, D.F., Threshold switching and thermal filaments in amorphou
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