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In a method for manufacturing a semiconductor device in which wiring layers are formed by a damascene method, certain embodiments relate to a manufacturing method and a semiconductor device, in which a bonding pad section having a multiple-layered structure can be formed by a simple method without i

In a method for manufacturing a semiconductor device in which wiring layers are formed by a damascene method, certain embodiments relate to a manufacturing method and a semiconductor device, in which a bonding pad section having a multiple-layered structure can be formed by a simple method without increasing the number of process steps. One embodiment includes a method for manufacturing a semiconductor device in which at least an uppermost wiring layer is formed by a damascene method. The method includes the following steps of: (a) forming an uppermost dielectric layer 22 in which an uppermost wiring layer is formed; (b) forming a wiring groove for the wiring layer having a specified pattern and an opening section for bonding pad section in the uppermost dielectric layer 22; (c) forming a first conduction layer for the wiring layer; (d) forming a second conduction layer over the first conduction layer, the second conduction layer composed of a different material from a material of the first conduction layer; and (e) planarizing the second conduction layer, the first conduction layer and the dielectric layer, to thereby form a wiring layer 62 composed of the first conduction layer in the wiring groove and a base conduction layer 82 composed of the first conduction layer and an exposed conduction layer 84 composed of the second conduction layer in the opening section for bonding pad section.

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1. A semiconductor device comprising: a plurality of wiring layers and dielectric layers interposed between the wiring layers, wherein an uppermost wiring layer and a bonding pad section are located at an identical level, the uppermost wiring layer comprising a first wiring material, the bonding

1. A semiconductor device comprising: a plurality of wiring layers and dielectric layers interposed between the wiring layers, wherein an uppermost wiring layer and a bonding pad section are located at an identical level, the uppermost wiring layer comprising a first wiring material, the bonding pad section including at least a base conduction layer of the first wiring material and a second conduction layer comprising a conductive material having a different composition than the first wiring material, wherein the bonding pad section includes an upper surface section in which the base conduction layer and the second conduction layer are exposed. 2. A semiconductor device according to claim 1, wherein the upper surface section includes an exposed surface of the base conduction layer that surrounds a periphery of the exposed conduction layer. 3. A semiconductor device according to claim 1, further comprising an uppermost dielectric protection layer, the protection layer defining an opening section including the exposed regions of the base conduction layer and the second conduction layer. 4. A semiconductor device according to claim 1, wherein: the base conduction layer is formed from a metal layer comprising at least one material selected from aluminum, copper, silver and alloys thereof, and the second conduction layer is formed from a metal layer comprising at least one material selected from aluminum, gold and alloys thereof. 5. A semiconductor device according to claim 1, further comprising a barrier layer under the wiring layer and under the base conduction layer of bonding pad. 6. A semiconductor device as in claim 1, wherein: the uppermost wiring layer has a width of 0.15 nm to 10 μm; the bonding pad section has a diameter of 30 nm to 150 μm; the base conduction layer has a thickness of 300 nm to 1000 nm in the bonding pad section beneath the second conduction layer; and the second conduction layer has a thickness of 100 nm to 500 nm in the bonding pad section.