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Process for producing semiconductor article using graded epitaxial growth

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0379355 (2003-03-04)
발명자 / 주소
  • Cheng, Zhi-Yuan
  • Fitzgerald, Eugene A.
  • Antoniadis, Dimitri A.
  • Hoyt, Judy L.
출원인 / 주소
  • Masachusetts Institute of Technology
대리인 / 주소
    Testa, Hurwitz & Thibeault, LLP
인용정보 피인용 횟수 : 70  인용 특허 : 118

초록

A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1-xGex(x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1-yGeylayer, a thin strained Si1-zGezlayer and another relaxed Si1-yGeylayer. Hydrogen

대표청구항

1. A method for forming a semiconductor layer, the method comprising: forming a first heterostructure by: forming a graded Si1-xGexbuffer layer on a first substrate, the graded Si1-xGexbuffer layer having a Ge concentration x increasing from zero to a value y; forming a relaxed Si1-yGeylayer o

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