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A fibrin/fibrinogen binding conjugate for forming a depot for the sustained release of a pharmaceutically active substance from a fibrin clot. The conjugate comprises a fibrin/fibrinogen binding moiety bound to a pharmaceutically active substance either directly or via an intervening substance captu

A fibrin/fibrinogen binding conjugate for forming a depot for the sustained release of a pharmaceutically active substance from a fibrin clot. The conjugate comprises a fibrin/fibrinogen binding moiety bound to a pharmaceutically active substance either directly or via an intervening substance capturing moiety such as an antibody. The conjugate can also be a recombinant fusion protein comprising a fibrin/fibrinogen binding moiety such as VEGF165C-terminal domain fused to a wound-healing substance such as leptin.

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A fibrin/fibrinogen binding conjugate for forming a depot for the sustained release of a pharmaceutically active substance from a fibrin clot. The conjugate comprises a fibrin/fibrinogen binding moiety bound to a pharmaceutically active substance either directly or via an intervening substance captu

A fibrin/fibrinogen binding conjugate for forming a depot for the sustained release of a pharmaceutically active substance from a fibrin clot. The conjugate comprises a fibrin/fibrinogen binding moiety bound to a pharmaceutically active substance either directly or via an intervening substance capturing moiety such as an antibody. The conjugate can also be a recombinant fusion protein comprising a fibrin/fibrinogen binding moiety such as VEGF165C-terminal domain fused to a wound-healing substance such as leptin. to the semiconductor film through the tapered portion of the electrode; selectively forming a second impurity region containing the impurity element imparting one conductivity type and a rare gas element in the semiconductor film in the pixel portion by providing a mask, and simultaneously forming the second impurity region in the driver circuit by using the electrode as a mask in a self-alignment manner; and selectively removing or reducing the metal element in the semiconductor film having the crystalline structure by gettering the metal element into the second impurity region. 2. A method of manufacturing a semiconductor device according to claim 1, wherein the step of forming the second impurity region includes providing as a raw material gas a rare gas containing phosphine, and adding the phosphorus element and the rare gas element to the semiconductor film in a same step. 3. A method of manufacturing a semiconductor device according to claim 1, wherein the step of forming the second impurity region includes providing as a raw material gas a hydrogen gas containing phosphine, adding the phosphorus element to the semiconductor film, and then adding the rare gas element to the semiconductor film by using a rare gas as a raw material gas without exposure to an atmosphere. 4. A method of manufacturing a semiconductor device according to claim 1, wherein the removing or reducing step comprises a heat treatment. 5. A method of manufacturing a semiconductor device according to claim 1, wherein the removing or reducing step comprises a process of irradiating at least the electrode and the second impurity region with a light. 6. A method of manufacturing a semiconductor device according to claim 1, wherein the removing or reducing step comprises a heat treatment and a process of irradiating at least the electrode and the second impurity region with a light. 7. A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is a liquid crystal display device. 8. A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is an electroluminescence display device. 9. A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle-type display, a player using a recording medium, a digital camera, a projector, a mobile telephone, and a portable book. 10. A method of manufacturing a semiconductor device comprising the steps of: adding a metal element to a semiconductor film comprising amorphous silicon over a substrate; crystallizing the semiconductor film added with the metal element; forming an insulating film on the semiconductor film; forming an electrode on the insulating film; forming a first impurity region by selectively adding an impurity element imparting one conductivity type to the semiconductor film; forming a second impurity region containing the impurity element imparting one conductivity type and a rare gas element adjacent to the first impurity region; and selectively removing or reducing the metal element in the semiconductor film having the crystalline structure by gettering the metal element into the second impurity region. 11. A method of manufacturing a semiconductor device according to claim 10, wherein the step of forming the second impurity region includes providing as a raw material gas a rare gas containing phosphine, and adding the phosphorus element and the rare gas element to the semiconductor film in a same step. 12. A method of manufacturing a semiconductor device according to claim 10, wherein the step of forming the second impurity region includes providing as a raw material gas a hydrogen gas containing phosphine, adding the phosphorus element to the semiconductor film, and then adding the rare gas element to the semiconductor film by using a rare g as as a raw material gas without exposure to an atmosphere. 13. A method of manufacturing a semiconductor device according to claim 10, wherein the removing or reducing step comprises a heat treatment. 14. A method of manufacturing a semiconductor device according to claim 10, wherein the removing or reducing step comprises a process of irradiating at least the electrode and the second impurity region with a light. 15. A method of manufacturing a semiconductor device according to claim 10, wherein the removing or reducing step comprises a heat treatment and a process of irradiating at least the electrode and the second impurity region with a light. 16. A method of manufacturing a semiconductor device according to claim 10, wherein the semiconductor device is a liquid crystal display device. 17. A method of manufacturing a semiconductor device according to claim 10, wherein the semiconductor device is an electroluminescence display device. 18. A method of manufacturing a semiconductor device according to claim 10, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle-type display, a player using a recording medium, a digital camera, a projector, a mobile telephone, and a portable book. 19. A method of manufacturing a semiconductor device comprising the steps of: adding a metal element to a semiconductor film comprising amorphous silicon over a substrate; crystallizing the semiconductor film added with the metal element; forming an insulating film on the semiconductor film; forming an electrode having a tapered portion on the insulating film; forming a first impurity region by selectively adding an impurity element imparting one conductivity type to the semiconductor film; forming a second impurity region containing the impurity element imparting one conductivity type and a rare gas element adjacent to the first impurity region; and selectively removing or reducing the metal element in the semiconductor film having the crystalline structure by gettering the metal element into the second impurity region. 20. A method of manufacturing a semiconductor device according to claim 19, Wherein the step of forming the second impurity region includes providing as a raw material gas a rare gas containing phosphine, and adding the phosphorus element and the rare gas element to the semiconductor film in a same step. 21. A method of manufacturing a semiconductor device according to claim 19, wherein the step of forming the second impurity region includes providing as a raw material gas a hydrogen gas containing phosphine, adding the phosphorus element to the semiconductor film, and then adding the rare gas element to the semiconductor film by using a rare gas as a raw material gas without exposure to an atmosphere. 22. A method of manufacturing a semiconductor device according to claim 19, wherein the removing or reducing step comprises a heat treatment. 23. A method of manufacturing a semiconductor device according to claim 19, wherein the removing or reducing step comprises a process of irradiating at least the electrode and the second impurity region with a light. 24. A method of manufacturing a semiconductor device according to claim 19, wherein the removing or reducing step comprises a heat treatment and a process of irradiating at least the electrode and the second impurity region with a light. 25. A method of manufacturing a semiconductor device according to claim 19, wherein the semiconductor device is a liquid crystal display device. 26. A method of manufacturing a semiconductor device according to claim 19, wherein the semiconductor device is an electroluminescence display device. 27. A method of manufacturing a semiconductor device according to claim 19, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle-type display, a playe r using a recording medium, a digital camera, a projector, a mobile telephone, and a portable book. 28. A method of manufacturing a semiconductor device comprising the steps of: adding a metal element to a semiconductor film comprising amorphous silicon over a substrate; crystallizing the semiconductor film added with the metal element; forming an insulating film on the semiconductor film; forming an electrode on the insulating film; forming a first impurity region by selectively adding an impurity element imparting one conductivity type and a rare gas element to the semiconductor film; forming a second impurity region containing the impurity element imparting one conductivity type between a channel region and the first impurity region; and selectively removing or reducing the metal element in the semiconductor film having the crystalline structure by gettering the metal element into the first impurity region. 29. A method of manufacturing a semiconductor device according to claim 28, wherein the step of forming the first impurity region includes providing as a raw material gas a rare gas containing phosphine, and adding the phosphorus element and the rare gas element to the semiconductor film in a same step. 30. A method of manufacturing a semiconductor device according to claim 28, wherein the step of forming the first impurity region includes providing as a raw material gas a hydrogen gas containing phosphine, adding the phosphorus element to the semiconductor film, and then adding the rare gas element to the semiconductor film by using a rare gas as a raw material gas without exposure to an atmosphere. 31. A method of manufacturing a semiconductor device according to claim 28, wherein the removing or reducing step comprises a heat treatment. 32. A method of manufacturing a semiconductor device according to claim 28, wherein the removing or reducing step comprises a process of irradiating at least the electrode and the second impurity region with a light. 33. A method of manufacturing a semiconductor device according to claim 28, wherein the removing or reducing step comprises a heat treatment and a process of irradiating at least the electrode and the second impurity region with a light. 34. A method of manufacturing a semiconductor device according to claim 28, wherein the semiconductor device is a liquid crystal display device. 35. A method of manufacturing a semiconductor device according to claim 28, wherein the semiconductor device is an electroluminescence display device. 36. A method of manufacturing a semiconductor device according to claim 28, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle-type display, a player using a recording medium, a digital camera, a projector, a mobile telephone, and a portable book. 37. A method of manufacturing a semiconductor device comprising the steps of: adding a metal element to a semiconductor film comprising amorphous silicon over a substrate; crystallizing the semiconductor film added with the metal element; forming an insulating film on the semiconductor film; forming an electrode having a tapered portion on the insulating film; forming a first impurity region by selectively adding an impurity element imparting one conductivity type and a rare gas element to the semiconductor film; forming a second impurity region containing the impurity element imparting one conductivity type between a channel region and the first impurity region; and selectively removing or reducing the metal element in the semiconductor film having the crystalline structure by gettering the metal element into the first impurity region. 38. A method of manufacturing a semiconductor device according to claim 37, wherein the step of forming the first impurity region includes providing as a raw material gas a rare gas containing phosphine, and adding the phosphorus element and the rare ga