초록

A method for dark current subtraction which enables a dark frame to be reused for dark current subtraction for multiple image frames. The dark frame is reused by scaling it according to changes in the dark current levels associated with the dark frame and the image frames.

대표청구항 ▼

A method for dark current subtraction which enables a dark frame to be reused for dark current subtraction for multiple image frames. The dark frame is reused by scaling it according to changes in the dark current levels associated with the dark frame and the image frames. ed Monostable FLCD, Exhibi

A method for dark current subtraction which enables a dark frame to be reused for dark current subtraction for multiple image frames. The dark frame is reused by scaling it according to changes in the dark current levels associated with the dark frame and the image frames. ed Monostable FLCD, Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability," SID 98 DIGEST, pp. 782-785. Yoshida et al., "A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle With Fast Response Time," SID 97 DIGEST pp. 841-844. Inui et al., "Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays," J. Mater. Chem., 1996, 6(4), pp. 671-673. Terada et al., "Half-V Switching Mode FLCD," Proceedings of the 46thApplied Physics Association Lectures, 28P-V-8, p. 1316, Mar. 1999. Yoshihara et al., "Time Division Full Color LCD by Ferroelectric Liquid Crystal," EKISHO, vol. 3, No. 3, pp. 190-194, 1999. Hermann Schenk et al., "Polymers for Light Emitting Diodes," EuroDisplay '99 Proceedings, pp. 33-37. International Search Report, Oct. 9, 2002. Igor De Rycke et al., 2-MHz Clocked LCD Drivers on Glass, IEEE Journal of Solid-State Circuits, vol. 25, No. 2, Apr. 1, 1990, pp. 531-538. Mutsuko Hatano et al., A Novel Self-Aligned Gate-Overlapped LDD Poly-Si TFT with High Reliability and Performance, IDEM 97, pp. 523-526, Jan. 1, 1997. Tiemin Zhao et al., A Novel Floating Gate Spacer Polysilicon TFT, IEDM, 1993, pp. 393-396, Dec. 5, 1993. R.A. Johnson, et al., Novel Polysilicon Sidewall Gate Silicon-on-Sapphire MOSFET for Power Amplifier Applications, Proceedings 1997 IEEE International SOI Conference, Oct. 1, 1997, pp. 136-137. Ken-ichi Oki et al., Mos-El Integrated Display Device, SID 82 Digest, May 11, 1982, pp. 266-267. Full Color Active Matrix Display Based on GaN Lateral Light Emitting Diode Structures, IBM Technical Disclosure Bulletin, vol. 39, No. 8, Aug. 1, 1996, pp. 75-79.