초록 ▼

After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, with

After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

대표청구항 ▼

After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, with

After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method. indasius et al., 257/685; US-6130116, 20001000, Smith et al., 438/127; US-6143588, 20001100, Glenn, 438/116; US-6159770, 20001200, Tetaka et al., 438/112; US-6198171, 20010300, Huang et al., 257/787; US-6218728, 20010400, Kimura, 257/693; US-6231364, 20010500, Liu, 439/326; US-6232152, 20010500, DiStefano et al., 438/124; US-6233154, 20010500, Farnworth et al., 361/752; US-6238953, 20010500, Tanaka et al., 438/112; US-6265770, 20010700, Uchiyama, 257/698; US-6274927, 20010800, Glenn, 257/680; US-6281568, 20010800, Glenn et al., 257/684; US-6297543, 20011000, Hong et al., 257/666; US-6303997, 20011000, Lee, 257/778; US-6313522, 20011100, Akram et al., 257/686; US-6326700, 20011200, Bai et al., 257/790; US-6404043, 20020600, Isaak, 257/686; US-6441498, 20020800, Song, 257/778; US-6445077, 20020900, Choi et al., 257/786; US-6455356, 20020900, Glenn et al., 438/123; US-6468836, 20021000, Distefano et al., 438/128; US-6512219, 20030100, Webster et al., 250/208.1; US-6573592, 20030600, Bolken, 257/687; US-20020127771, 20020900, Akram et al., 438/107