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Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/00
  • C23C-016/00
출원번호 US-0953451 (2001-09-14)
발명자 / 주소
  • Lei, Lawrence C.
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Moser, Patterson & Sheridan, LLP
인용정보 피인용 횟수 : 118  인용 특허 : 69

초록

An apparatus and method for effectively and controllably vaporizing a solid precursor material is provided. In particular, the present invention provides an apparatus that includes a housing defining a sealed interior volume having an inlet for receiving a carrier gas, at least one surface within th

대표청구항

1. An apparatus for vaporizing a solid precursor, comprising: a housing defining an interior volume having an inlet for receiving a carrier gas; and at least two surfaces contained in the housing having the solid precursor applied thereto, wherein each of the at least two surfaces comprises a he

이 특허에 인용된 특허 (69)

  1. Ofer Sneh ; Carl J. Galewski, Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition.
  2. Sneh Ofer ; Galewski Carl J., Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition.
  3. Raaijmakers, Ivo, Apparatus and method for growth of a thin film.
  4. Yoder Max N. (Falls Church VA), Apparatus for and a method of growing thin films of elemental semiconductors.
  5. Scholz Christoph (Schliersee DEX), Apparatus for atomic layer epitaxial growth.
  6. Choi Won-sung,KRX ; Lee Sang-jin,KRX, Apparatus for depositing thin films on semiconductor wafer by continuous gas injection.
  7. Choi Won-sung,KRX ; Oh Kyu-un,KRX, Apparatus for depositing thin films on semiconductor wafers.
  8. Kim Yong II,KRX ; Shin Joong Ho,KRX ; Yun Yeo Heung,KRX, Apparatus for deposition of thin films on wafers through atomic layer epitaxial process.
  9. Kilpi, Vaino, Apparatus for growing thin films.
  10. Pekka T. Soininen FI; Vaino Kilpi FI, Apparatus for growing thin films.
  11. Soininen Pekka,FIX ; Patteri Janne,FIX, Apparatus for growing thin films.
  12. Suntola Tuomo S. (Espoo FIX) Pakkala Arto J. (Espoo FIX) Lindfors Sven G. (Espoo FIX), Apparatus for performing growth of compound thin films.
  13. Hyun Kwang-Soo,KRX ; Park Kyung-ho,KRX ; Yoon Neung-goo,KRX ; Choi Kang-jun,KRX ; Jeong Soo-hong,KRX, Atomic layer deposition apparatus for depositing atomic layer on multiple substrates.
  14. Gates Stephen McConnell ; Neumayer Deborah Ann, Atomic layer deposition with nitrate containing precursors.
  15. Yoder Max N. (Falls Church VA), Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors.
  16. Yokoyama Haruki (Kanagawa JPX) Shinohara Masanori (Kanagawa JPX), Atomic layer epitaxy method and apparatus.
  17. Sandhu Gurtej Singh, Barrier layer cladding around copper interconnect lines.
  18. Dae-sig Kim KR, Bubbler.
  19. Kai-Erik Elers FI; Suvi P. Haukka FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Deposition of transition metal carbides.
  20. Onoe Atsushi,JPX ; Yoshida Ayako,JPX ; Chikuma Kiyofumi,JPX, Device for feeding raw material for chemical vapor phase deposition and method therefor.
  21. Lee Woo-Hyeong ; Manchanda Lalita, Electronic components with doped metal oxide dielectric materials and a process for making electronic components with do.
  22. Imai Masayuki (Kofu JPX) Nishimura Toshiharu (Kofu JPX), Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily.
  23. Jrgensen Holger (Aachen DEX), Gas inlet for a plurality of reactant gases into reaction vessel.
  24. Park In-seon,KRX ; Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Kim Byung-hee,KRX ; Lee Sang-min,KRX ; Park Chang-soo,KRX, Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature.
  25. Li Ting Kai ; Gurary Alexander I. ; Scott Dane C., Liquid vaporizer system and method.
  26. Hiskes Ronald (3484 Waverley Palo Alto CA 94306) DiCarolis Stephen (2212 Cabrillo Ave. Santa Clara CA 95050), MOCVD system for forming superconducting thin films.
  27. Aucoin Thomas R. (Ocean NJ) Wittstruck Richard H. (Howell NJ) Zhao Jing (Ellicott MD) Zawadzki Peter A. (Plainfield NJ) Baarck William R. (Fair Haven NJ) Norris Peter E. (Cambridge MA), Method and apparatus for depositing a refractory thin film by chemical vapor deposition.
  28. Sandhu Gurtej S. (Boise ID) Meikle Scott G. (Boise ID) Westmoreland Donald L. (Boise ID), Method and appartus for subliming precursors.
  29. Albert Hasper NL; Frank Huussen NL; Cornelis Marinus Kooijman NL; Theodorus Gerardus Maria Oosterlaken NL; Jack Herman Van Putten NL; Christianus Gerardus Maria Ridder NL; Gert-Jan Snijders NL, Method and device for transferring wafers.
  30. Suntola Tuomo,FIX ; Lindfors Sven,FIX ; Soininen Pekka,FIX, Method and equipment for growing thin films.
  31. Alessandra Satta BE; Karen Maex BE; Kai-Erik Elers FI; Ville Antero Saanila FI; Pekka Juha Soininen FI; Suvi P. Haukka FI, Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
  32. Tuomo Suntoloa FI; Markku Leskela FI; Mikko Ritala FI, Method for coating inner surfaces of equipment.
  33. Matsumoto Tomotaka (Kawasaki JPX) Inoue Jun (Kawasaki JPX) Ichimura Teruhiko (Kawasaki JPX) Murata Yuji (Kawasaki JPX) Watanabe Junichi (Kawasaki JPX) Nagahiro Yoshio (Kawasaki JPX) Hodate Mari (Kawa, Method for forming a film and method for manufacturing a thin film transistor.
  34. Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Park Chang-soo,KRX ; Kim Young-sun,KRX, Method for forming dielectric film of capacitor having different thicknesses partly.
  35. Kang Sang-bom,KRX ; Chae Yun-sook,KRX ; Park Chang-soo,KRX ; Lee Sang-in,KRX, Method for forming metal layer using atomic layer deposition.
  36. Nishizawa Junichi (Sendai JPX) Aoki Kenji (Matsudo JPX), Method for growing single crystal thin films of element semiconductor.
  37. Suntola Tuomo,FIX ; Lindfors Sven,FIX, Method for growing thin films.
  38. Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Park Chang-soo,KRX ; Lee Sang-min,KRX, Method for manufacturing thin film using atomic layer deposition.
  39. Suntola Tuomo S. (Espoo FIX) Pakkala Arto J. (Espoo FIX) Lindfors Sven G. (Espoo FIX), Method for performing growth of compound thin films.
  40. Suntola Tuomo (Riihikallio 02610 Espoo 61 SF) Antson Jorma (Urheilutie 22 ; 01350 Vantaa 35 SF), Method for producing compound thin films.
  41. Kang Sang-Bom,KRX ; Lee Sang-In,KRX, Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device.
  42. Yun-sook Chae KR; In-sang Jeon KR; Sang-bom Kang KR; Sang-in Lee KR; Kyu-wan Ryu KR, Method of delivering gas into reaction chamber and shower head used to deliver gas.
  43. Kang Sang-bom,KRX ; Lim Hyun-seok,KRX ; Chae Yung-sook,KRX ; Jeon In-sang,KRX ; Choi Gil-heyun,KRX, Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor.
  44. Hyun-Seok Lim KR; Sang-Bom Kang KR; In-Sang Jeon KR; Gil-Heyun Choi KR, Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same.
  45. Kang Sang-bom,KRX ; Park Chang-soo,KRX ; Chae Yun-sook,KRX ; Lee Sang-in,KRX, Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same.
  46. Sang-bum Kang KR; Yun-sook Chae KR; Sang-in Lee KR; Hyun-seok Lim KR; Mee-young Yoon KR, Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same.
  47. Turner Norman L. (Mountain View CA) White John MacNeill (Los Gatos CA) Berkstresser David (Los Gatos CA), Method of heating and cooling large area glass substrates.
  48. In-sang Jeon KR; Sang-bom Kang KR; Hyun-seok Lim KR; Gil-heyun Choi KR, Method of manufacturing a barrier metal layer using atomic layer deposition.
  49. Nasu Yasuhiro (Sagamihara JPX) Okamoto Kenji (Hiratsuka JPX) Watanabe Jun-ichi (Kawasaki JPX) Endo Tetsuro (Atsugi JPX) Soeda Shinichi (Hiratsuka JPX), Method of manufacturing active matrix display device using insulation layer formed by the ale method.
  50. Dautartas Mindaugas F. ; Manchanda Lalita, Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants.
  51. Leem Hyeun-Seog,KRX, Methods of forming smooth conductive layers for integrated circuit devices.
  52. Seung-hwan Lee KR; Yeong-kwan Kim KR; Dong-chan Kim KR; Young-wook Park KR, Methods of forming thin films by atomic layer deposition.
  53. Nishizawa Junichi (6-16 ; Komegafukuro 1-chome Sandai-shi ; Miyagi-ken JPX) Abe Hitoshi (1-3 ; Otamayashita Sendai JPX) Suzuki Soubei (1-3 ; Otamayashita Sendai-shi ; Miyagi-ken JPX), Process for forming a thin film of silicon.
  54. Doering Kenneth ; Galewski Carl J. ; Gadgil Prasad N. ; Seidel Thomas E., Processing chamber for atomic layer deposition processes.
  55. Kai-Erik Elers FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Production of elemental thin films using a boron-containing reducing agent.
  56. Ivo Raaijmakers NL; Pekka T. Soininen FI; Ernst H. A. Granneman NL; Suvi P. Haukka FI, Protective layers prior to alternating layer deposition.
  57. Ofer Sneh, Radical-assisted sequential CVD.
  58. Ofer Sneh, Radical-assisted sequential CVD.
  59. Sneh Ofer, Radical-assisted sequential CVD.
  60. Mee-Young Yoon KR; Sang-In Lee KR; Hyun-Seok Lim KR, Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer.
  61. Arthur Sherman, Sequential chemical vapor deposition.
  62. Sherman Arthur, Sequential chemical vapor deposition.
  63. Atwell David R., Solid precursor injector apparatus.
  64. Bhandari Gautam ; Baum Thomas H., Tantalum amide precursors for deposition of tantalum nitride on a substrate.
  65. Gautam Bhandari ; Thomas H. Baum, Tantalum amide precursors for deposition of tantalum nitride on a substrate.
  66. Nakata Yukihiko,JPX ; Fujihara Masaki,JPX ; Date Masahiro,JPX ; Matsuo Takuya,JPX ; Ayukawa Michiteru,JPX ; Itoga Takashi,JPX, Thin-film semiconductor device including a semiconductor film with high field-effect mobility.
  67. Ilg Matthias ; Kirchhoff Markus ; Werner Christoph,DEX, Uniform distribution of reactants in a device layer.
  68. Atwell David R. (Boise ID) Westmoreland Donald L. (Boise ID), Vapor delivery system for solid precursors and method regarding same.
  69. Gadgil Prasad N. ; Seidel Thomas E., Vertically-stacked process reactor and cluster tool system for atomic layer deposition.

이 특허를 인용한 특허 (118)

  1. Choi, Kenric T.; Narwankar, Pravin K.; Kher, Shreyas S.; Nguyen, Son T.; Deaton, Paul; Ngo, Khai; Chhabra, Paul; Ouye, Alan H.; Wu, Dien-Yeh (Daniel), Ampoule for liquid draw and vapor draw with a continuous level sensor.
  2. Lee, Wei Ti; Chiao, Steve H., Ampoule splash guard apparatus.
  3. Lee,Wei Ti; Chiao,Steve H., Ampoule splash guard apparatus.
  4. Chu, Schubert S.; Marcadal, Christophe; Ganguli, Seshadri; Nakashima, Norman M.; Wu, Dien-Yeh, Ampoule with a thermally conductive coating.
  5. Suzuki, Kenji, Ampule tray for and method of precursor surface area.
  6. Chen, Ling; Ku, Vincent W.; Chung, Hua; Marcadal, Christophe; Ganguli, Seshadri; Lin, Jenny; Wu, Dien Yeh; Ouye, Alan; Chang, Mei, Apparatus and method for generating a chemical precursor.
  7. Chen,Ling; Ku,Vincent W.; Chang,Mei; Wu,Dien Yeh; Chung,Hua, Apparatus and method for hybrid chemical processing.
  8. Chen,Ling; Ku,Vincent W.; Chang,Mei; Wu,Dien Yeh; Chung,Hua, Apparatus and method for hybrid chemical processing.
  9. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  10. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  11. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  12. Thakur, Randhir P. S.; Mak, Alfred W.; Xi, Ming; Glenn, Walter Benjamin; Khan, Ahmad A.; Al-Shaikh, Ayad A.; Gelatos, Avgerinos V.; Umotoy, Salvador P., Apparatus for cyclical depositing of thin films.
  13. Thakur,Randhir P. S.; Mak,Alfred W.; Xi,Ming; Glenn,Walter Benjamin; Khan,Ahmad A.; Al Shaikh,Ayad A.; Gelatos,Avgerinos V.; Umotoy,Salvador P., Apparatus for cyclical deposition of thin films.
  14. Chen, Ling; Ku, Vincent W.; Chang, Mei; Wu, Dien Yeh; Chung, Hua, Apparatus for hybrid chemical processing.
  15. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Apparatus for integration of barrier layer and seed layer.
  16. Ganguli,Seshadri; Chen,Ling; Ku,Vincent W., Apparatus for providing gas to a processing chamber.
  17. Guenther,Rolf A., Apparatus for providing gas to a processing chamber.
  18. Myo, Nyi Oo; Choi, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Apparatuses for atomic layer deposition.
  19. Chin, Barry L.; Mak, Alfred W.; Lei, Lawrence C.; Xi, Ming; Chung, Hua; Lai, Ken Kaung; Byun, Jeong Soo, Atomic layer deposition apparatus.
  20. Chin, Barry L.; Mak, Alfred W.; Lei, Lawrence Chung-Lai; Xi, Ming; Chung, Hua; Lai, Ken Kaung; Byun, Jeong Soo, Atomic layer deposition apparatus.
  21. Chin, Barry L.; Mak, Alfred W.; Lei, Lawrence Chung-Lai; Xi, Ming; Chung, Hua; Lai, Ken Kaung; Byun, Jeong Soo, Atomic layer deposition apparatus.
  22. Chin, Barry L.; Mak, Alfred W.; Lei, Lawrence Chung-Lai; Xi, Ming; Chung, Hua; Lai, Ken Kaung; Byun, Jeong Soo, Atomic layer deposition apparatus.
  23. Chin, Barry L.; Mak, Alfred W.; Lei, Lawrence Chung-Lai; Xi, Ming; Chung, Hua; Lai, Ken Kaung; Byun, Jeong Soo, Atomic layer deposition apparatus.
  24. Chin,Barry L.; Mak,Alfred W.; Lei,Lawrence Chung Lai; Xi,Ming; Chung,Hua; Lai,Ken Kaung; Byun,Jeong Soo, Atomic layer deposition apparatus.
  25. Tabatabaie, Kamal; Hallock, Robert B., Atomic layer deposition in the formation of gate structures for III-V semiconductor.
  26. Chung, Hua; Wang, Rongjun; Maity, Nirmalya, Atomic layer deposition of barrier materials.
  27. Cunning, Hugh; Williams, Graham; Odedra, Rajesh; Kanjolia, Ravi, Bubbler for the transportation of substances by a carrier gas.
  28. Nakashima, Norman; Marcadal, Christophe; Ganguli, Seshadri; Ma, Paul; Chu, Schubert S., Chemical delivery apparatus for CVD or ALD.
  29. Nakashima, Norman; Marcadal, Christophe; Ganguli, Seshadri; Ma, Paul; Chu, Schubert S., Chemical delivery apparatus for CVD or ALD.
  30. Nakashima, Norman; Marcadal, Christophe; Ganguli, Seshadri; Ma, Paul; Chu, Schubert S., Chemical delivery apparatus for CVD or ALD.
  31. Chen, Ling; Ku, Vincent W.; Chung, Hua; Marcadal, Christophe; Ganguli, Seshadri; Lin, Jenny; Wu, Dien Yeh; Ouye, Alan; Chang, Mei, Chemical precursor ampoule for vapor deposition processes.
  32. Cuvalci, Olkan; Wu, Dien-Yeh; Yuan, Xiaoxiong, Chemical precursor ampoule for vapor deposition processes.
  33. Dimeo, Frank; Dietz, James; Olander, W. Karl; Kaim, Robert; Bishop, Steven; Neuner, Jeffrey W.; Arno, Jose; Marganski, Paul J.; Sweeney, Joseph D.; Eldridge, David; Yedave, Sharad; Byl, Oleg; Stauf, Gregory T., Cleaning of semiconductor processing systems.
  34. Lu, Jiang; Ha, Hyoung-Chan; Ma, Paul F.; Ganguli, Seshadri; Aubuchon, Joseph F.; Yu, Sang-ho; Narasimhan, Murali K., Cobalt deposition on barrier surfaces.
  35. Lu, Jiang; Ha, Hyoung-Chan; Ma, Paul; Ganguli, Seshadri; Aubuchon, Joseph F.; Yu, Sang Ho; Narasimhan, Murali K., Cobalt deposition on barrier surfaces.
  36. Nguyen, Son T.; Sangam, Kedarnath; Schwartz, Miriam; Choi, Kenric; Bhat, Sanjay; Narwankar, Pravin K.; Kher, Shreyas; Sharangapani, Rahul; Muthukrishnan, Shankar; Deaton, Paul, Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system.
  37. Yearsley,Gyle D.; Nekl,Joshua J., Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character.
  38. Chung, Hua; Chen, Ling; Chin, Barry L., Cyclical deposition of refractory metal silicon nitride.
  39. Wang,Luping; Baum,Thomas H.; Xu,Chongying, Delivery systems for efficient vaporization of precursor source material.
  40. Yoon, Ki Hwan; Cha, Yonghwa Chris; Yu, Sang Ho; Ahmad, Hafiz Farooq; Wee, Ho Sun, Deposition methods for barrier and tungsten materials.
  41. Yoon,Ki Hwan; Cha,Yonghwa Chris; Yu,Sang Ho; Ahmad,Hafiz Farooq; Wee,Ho Sun, Deposition methods for barrier and tungsten materials.
  42. Lee, Wei Ti; Wang, Yen-Chih; Hassan, Mohd Fadzli Anwar; Kim, Ryeun Kwan; Park, Hyung Chul; Guo, Ted; Ritchie, Alan A., Deposition processes for titanium nitride barrier and aluminum.
  43. Suzuki, Kenji; Guidotti, Emmanuel P.; Leusink, Gerrit J.; Hara, Masamichi; Kuroiwa, Daisuke; Ishizaka, Tadahiro, Film precursor tray for use in a film precursor evaporation system and method of using.
  44. Narwankar, Pravin K.; Higashi, Gregg, Formation of a silicon oxynitride layer on a high-k dielectric material.
  45. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.
  46. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  47. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
  48. Lai, Ken K.; Byun, Jeong Soo; Wu, Frederick C.; Srinivas, Ramanujapuran A.; Gelatos, Avgerinos; Chang, Mei; Kori, Moris; Sinha, Ashok K.; Chung, Hua; Fang, Hongbin; Mak, Alfred W.; Yang, Michael X.; Xi, Ming, Formation of composite tungsten films.
  49. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.
  50. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus for atomic layer deposition.
  51. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman; Chang, Mei, Gas delivery apparatus for atomic layer deposition.
  52. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman; Chang, Mei, Gas delivery apparatus for atomic layer deposition.
  53. Owa, Michiaki, Heating control device and heating control method.
  54. Shero, Eric J.; Verghese, Mohith; Maes, Jan Willem, High concentration water pulses for atomic layer deposition.
  55. Ma, Paul F.; Aubuchon, Joseph F.; Chang, Mei; Kim, Steven H.; Wu, Dien-Yeh; Nakashima, Norman M.; Johnson, Mark; Palakodeti, Roja, In-situ chamber treatment and deposition process.
  56. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Integration of barrier layer and seed layer.
  57. Sweeney, Joseph D.; Yedave, Sharad N.; Byl, Oleg; Kaim, Robert; Eldridge, David; Feng, Lin; Bishop, Steven E.; Olander, W. Karl; Tang, Ying, Ion source cleaning in semiconductor processing systems.
  58. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.
  59. Chen, Ling; Ku, Vincent W.; Chung, Hua; Marcadal, Christophe; Ganguli, Seshadri; Lin, Jenny; Wu, Dien-Yeh; Ouye, Alan; Chang, Mei, Method and apparatus for generating a precursor for a semiconductor processing system.
  60. Ganguli, Seshadri; Chen, Ling; Ku, Vincent W., Method and apparatus for providing precursor gas to a processing chamber.
  61. Ganguli,Seshadri; Chen,Ling; Ku,Vincent W., Method and apparatus for providing precursor gas to a processing chamber.
  62. Chen,Ling; Ku,Vincent W.; Chung,Hua; Marcadal,Christophe; Ganguli,Seshadri; Lin,Jenny; Wu,Dien Yeh; Ouye,Alan; Chang,Mei, Method and apparatus of generating PDMAT precursor.
  63. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi, Method and apparatus to help promote contact of gas with vaporized material.
  64. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
  65. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
  66. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
  67. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
  68. Gregg, John N.; Battle, Scott L.; Banton, Jeffrey I.; Naito, Donn K.; Laxman, Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
  69. Gregg,John N.; Battle,Scott L.; Banton,Jeffrey I.; Naito,Donn K.; Laxman,Ravi, Method and apparatus to help promote contact of gas with vaporized material.
  70. Gregg,John N.; Battle,Scott L.; Banton,Jeffrey I.; Naito,Donn K.; Laxman,Ravi K., Method and apparatus to help promote contact of gas with vaporized material.
  71. Suzuki,Kenji, Method and integrated system for purifying and delivering a metal carbonyl precursor.
  72. Leusink, Gerrit J., Method and system for depositing a layer from light-induced vaporization of a solid precursor.
  73. Suzuki,Kenji; Leusink,Gerrit J.; McFeely,Fenton R., Method and system for refurbishing a metal carbonyl precursor.
  74. Xi, Ming; Sinha, Ashok; Kori, Moris; Mak, Alfred W.; Lu, Xinliang; Lai, Ken Kaung; Littau, Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
  75. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
  76. Chua, Thai Cheng; Muthukrisnan, Shankar; Swenberg, Johanes; Kher, Shreyas; Wang, Chikuang Charles; Conti, Giuseppina; Uritsky, Yuri, Method for fabricating an integrated gate dielectric layer for field effect transistors.
  77. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method for forming tungsten materials during vapor deposition processes.
  78. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Method for forming tungsten materials during vapor deposition processes.
  79. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
  80. Metzner, Craig; Kher, Shreyas; Kim, Yeong Kwan; Rocklein, M. Noel; George, Steven M., Method for hafnium nitride deposition.
  81. Faguet,Jacques, Method for precursor delivery.
  82. Ganguli, Seshadri; Chen, Ling; Ku, Vincent W., Method for providing gas to a processing chamber.
  83. Suzuki,Kenji, Method for purifying a metal carbonyl precursor.
  84. Ma, Paul; Aubuchon, Joseph F.; Lu, Jiang; Chang, Mei, Method for tuning a deposition rate during an atomic layer deposition process.
  85. Jan Snijders, Gert; Raaijmakers, Ivo, Method for vaporizing non-gaseous precursor in a fluidized bed.
  86. Myo, Nyi Oo; Cho, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Methods for atomic layer deposition of hafnium-containing high-K dielectric materials.
  87. Byun, Jeong Soo, Methods for depositing tungsten after surface treatment.
  88. Lai, Ken Kaung; Rajagopalan, Ravi; Khandelwal, Amit; Moorthy, Madhu; Gandikota, Srinivas; Castro, Joseph; Gelatos, Avgerinos V.; Knepfler, Cheryl; Jian, Ping; Fang, Hongbin; Huang, Chao-Ming; Xi, Ming; Yang, Michael X.; Chung, Hua; Byun, Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
  89. Suzuki, Kenji; Guidotti, Emmanuel P.; Leusink, Gerrit J.; Hara, Masamichi; Kuroiwa, Daisuke, Multi-tray film precursor evaporation system and thin film deposition system incorporating same.
  90. Mahajani, Maitreyee; Yudovsky, Joseph; McDougall, Brendan, Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool.
  91. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E.; White, Carl L., Precursor delivery system.
  92. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E; White, Carl L, Precursor delivery system.
  93. Aitchison,Bradley J.; Maula,Jarmo; Leskinen,Hannu; Lang,Teemu; Kuosmanen,Pekka; H?rk?nen,Kari; Sonninen,Martti, Precursor material delivery system for atomic layer deposition.
  94. Mahajani, Maitreyee, Pretreatment processes within a batch ALD reactor.
  95. Mahajani,Maitreyee, Pretreatment processes within a batch ALD reactor.
  96. Ganguli, Seshadri; Yu, Sang-Ho; Phan, See-Eng; Chang, Mei; Khandelwal, Amit; Ha, Hyoung-Chan, Process for forming cobalt and cobalt silicide materials in tungsten contact applications.
  97. Ganguli, Seshadri; Yu, Sang-Ho; Phan, See-Eng; Chang, Mei; Khandelwal, Amit; Ha, Hyoung-Chan, Process for forming cobalt and cobalt silicide materials in tungsten contact applications.
  98. Ganguli, Seshadri; Chu, Schubert S.; Chang, Mei; Yu, Sang-Ho; Moraes, Kevin; Phan, See-Eng, Process for forming cobalt-containing materials.
  99. Ku,Vincent; Chen,Ling; Grunes,Howard; Chung,Hua, Processing chamber configured for uniform gas flow.
  100. Lu, Xinliang; Jian, Ping; Yoo, Jong Hyun; Lai, Ken Kaung; Mak, Alfred W.; Jackson, Robert L.; Xi, Ming, Pulsed deposition process for tungsten nucleation.
  101. Cao, Wei; Chung, Hua; Ku, Vincent W.; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  102. Cao, Wei; Chung, Hua; Ku, Vincent; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  103. Cao, Wei; Chung, Hua; Ku, Vincent; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  104. Kanjolia, Ravi; Platts, Chris; Nguyen, Nam; Wilkinson, Mark, Solid precursor delivery assemblies and related methods.
  105. Chaubey, Trapti; Xu, Mindi, Solid precursor sublimator.
  106. Brcka, Jozef, Solid precursor vaporization system for use in chemical vapor deposition.
  107. Cleary, John M.; Arno, Jose I.; Hendrix, Bryan C.; Naito, Donn; Battle, Scott; Gregg, John N.; Wodjenski, Michael J.; Xu, Chongying, Solid precursor-based delivery of fluid utilizing controlled solids morphology.
  108. Birtcher, Charles Michael; Steidl, Thomas Andrew, Solid source container with inlet plenum.
  109. Olsen, Christopher; Narwankar, Pravin K.; Kher, Shreyas S.; Thakur, Randhir; Muthukrishnan, Shankar; Kraus, Philip A., Stabilization of high-k dielectric materials.
  110. Schieve, Eric W.; Koai, Keith K.; Or, David T.; Correa, Rene T., Substrate support lift mechanism.
  111. Xi, Ming; Yang, Michael; Zhang, Hui, System and method for forming an integrated barrier layer.
  112. Tuominen, Marko; Shero, Eric; Verghese, Mohith, System for controlling the sublimation of reactants.
  113. Shah, Kavita; Yang, Haichun; Chu, Schubert S., Tantalum carbide nitride materials by vapor deposition processes.
  114. Gelatos, Avgerinos V.; Lee, Sang-Hyeob; Yuan, Xiaoxiong; Umotoy, Salvador P.; Chang, Yu; Tzu, Gwo-Chuan; Renuart, Emily; Lin, Jing; Lai, Wing-Cheong; Le, Sang Q., Temperature controlled lid assembly for tungsten nitride deposition.
  115. Wang, Shulin; Kroemer, Ulrich; Luo, Lee; Chen, Aihua; Li, Ming, Tungsten nitride atomic layer deposition processes.
  116. Lee, Sang-Hyeob; Gelatos, Avgerinos V.; Wu, Kai; Khandelwal, Amit; Marshall, Ross; Renuart, Emily; Lai, Wing-Cheong Gilbert; Lin, Jing, Vapor deposition of tungsten materials.
  117. Shah, Kavita; Yang, Haichun; Chu, Schubert S., Vapor deposition processes for tantalum carbide nitride materials.
  118. Birtcher, Charles Michael; Steidl, Thomas Andrew; Lei, Xinjian; Ivanov, Sergei Vladimirovich, Vessel with filter.
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