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A system is provided for positioning separate portions of a sample in elongate, parallel channels of a sample chamber and to irradiate a sample in the chamber to create a diffraction pattern where the sample and chamber differ in refractive index. The system also can measure absorption of electromag

A system is provided for positioning separate portions of a sample in elongate, parallel channels of a sample chamber and to irradiate a sample in the chamber to create a diffraction pattern where the sample and chamber differ in refractive index. The system also can measure absorption of electromagnetic radiation by a sample in the chamber, and can measure the absorption simultaneously with measurement of diffraction by the sample.

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A system is provided for positioning separate portions of a sample in elongate, parallel channels of a sample chamber and to irradiate a sample in the chamber to create a diffraction pattern where the sample and chamber differ in refractive index. The system also can measure absorption of electromag

A system is provided for positioning separate portions of a sample in elongate, parallel channels of a sample chamber and to irradiate a sample in the chamber to create a diffraction pattern where the sample and chamber differ in refractive index. The system also can measure absorption of electromagnetic radiation by a sample in the chamber, and can measure the absorption simultaneously with measurement of diffraction by the sample. m 0.8/1 to 1.3/1; the trivalent chromium concentration ranges from 1 to 5 g/L, the oxalic acid concentration ranges from 2 to 13 g/L, the cobalt ion concentration ranges from 0.5 to 8 g/L and the silicon concentration ranges from 2 to 10 g/L; it further comprises 1 to 50 g/L of an inorganic salt selected from the group consisting of inorganic salts of nitric acid, sulfuric acid and hydrochloric acid; and pH ranges from 0.5 to 4. 9. A hexavalent chromium free, corrosion resistant, trivalent chromate conversion film containing zinc, trivalent chromium, cobalt, oxalic acid and SiO2and formed on zinc or zinc alloy plating layers, wherein the SiO2content thereof ranges from 1 to 10 mg/dm2,the mass ratio of trivalent chromium to (trivalent chromium+zinc) [Cr/(Cr+Zn)] is not less than 15/100, the mass ratio of cobalt to (trivalent chromium+cobalt) [Co/(Cr+Co)] ranges from 1/100 to 40/100 and the mass ratio of the oxalic acid to (trivalent chromium+oxalic acid) [oxalic acid/(Cr+oxalic acid)] ranges from 5/100 to 50/100. 10. A hexavalent chromium free, corrosion resistant, trivalent chromate conversion film containing zinc, trivalent chromium, cobalt, oxalic acid and SiO2and formed on zinc or zinc alloy plating layers, wherein the SiO2content thereof ranges from 1 to 5 mg/dm2,the mass ratio of trivalent chromium to (trivalent chromium+zinc) [Cr/(Cr+Zn)] is not less than 20/100 to 60/100, the mass ratio of cobalt to (trivalent chromium+cobalt) [Co/(Cr+Co)] ranges from 4/100 to 40/100 and the mass ratio of the oxalic acid to (trivalent chromium+oxalic acid) [oxalic acid/(Cr+oxalic acid)] ranges from 15/100 to 50/100. 11. The film according to claim 10 wherein the trivalent chromate conversion film comprises two layers. 12. The film according to claim 10 wherein the thickness of the film ranges from 0.05 to 2 μm. 13. A method for forming a hexavalent chromium free, corrosion resistant, trivalent chromate conversion film comprising: the step of bringing zinc or zinc alloy plating layers into contact with a processing solution comprising a silicon compound, trivalent chromium and oxalic acid in a molar ratio ranging from 0.5/1 to 1.5/1, wherein the trivalent chromium is present in the form of a water-soluble complex with oxalic acid, and cobalt ions, which are stably present in the processing solution without causing any precipitation due to formation a hardly soluble metal salt with oxalic acid; wherein the solution reacts with zinc to form a hexavalent chromium free, corrosion resistant, trivalent chromate conversion film containing zinc, trivalent chromium, cobalt, oxalic acid and SiO2on the plating. 14. The method according to claim 13 wherein, in the processing solution, the silicon compound is acidic colloidal silica. 15. The method according to claim 13 wherein, in the processing solution, molar ratio of trivalent chromium to oxalic acid ranges from 0.8/1 to 1.3/1. 16. The method according to claim 13 wherein, in the processing solution, the trivalent chromium concentration ranges from 0.2 to 5 g/L, the oxalic acid concentration ranges from 0.2 to 13 g/L, the cobalt ion concentration ranges from 0.2 to 10 g/L and the silicon concentration ranges from 1 to 20 g/L. 17. The method according to claim 13 wherein the processing solution further comprises 1 to 50 g/L of an inorganic salt selected from the group consisting of inorganic salts of nitric acid, sulfuric acid and hydrochloric acid. 18. The method according to claim 13 wherein the processing solution has pH of 0.5 to 4. 19. The method according to claim 13 wherein, in the processing solution, the silicon compound is acidic colloidal silica; molar ratio of trivalent chromium to oxalic acid ranges from 0.8/1 to 1.3/1; the trivalent chromium concentration ranges from 0.2 to 5 g/L, the oxalic acid concentration ranges from 0.2 to 13 g/L, the cobalt ion concentration ranges from 0.2 to 10 g/L and the