Exposure method and exposure apparatus using near-field light and exposure mask
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G03F-009/00
G03B-027/42
출원번호
US-0795497
(2001-03-01)
우선권정보
JP-0058278 (2000-03-03); JP-0050898 (2001-02-26)
발명자
/ 주소
Inao, Yasuhisa
Kuroda, Ryo
Yamaguchi, Takako
출원인 / 주소
Canon Kabushiki Kaisha
대리인 / 주소
Fitzpatrick, Cella, Harper & Scinto
인용정보
피인용 횟수 :
13인용 특허 :
3
초록▼
A photolithography method using near-field light includes a step of controlling the position of an exposure mask and an object to be processed so as to make the object to be located in a region where near-field light is present, and a step of exposing the object to near-field light while controlling
A photolithography method using near-field light includes a step of controlling the position of an exposure mask and an object to be processed so as to make the object to be located in a region where near-field light is present, and a step of exposing the object to near-field light while controlling the intensity of such light as a function of the aperture density of the exposure mask. The intensity of near-field light is controlled by modifying the aperture width or modifying the transmissivity of the exposure mask depending on the aperture density.
대표청구항▼
A photolithography method using near-field light includes a step of controlling the position of an exposure mask and an object to be processed so as to make the object to be located in a region where near-field light is present, and a step of exposing the object to near-field light while controlling
A photolithography method using near-field light includes a step of controlling the position of an exposure mask and an object to be processed so as to make the object to be located in a region where near-field light is present, and a step of exposing the object to near-field light while controlling the intensity of such light as a function of the aperture density of the exposure mask. The intensity of near-field light is controlled by modifying the aperture width or modifying the transmissivity of the exposure mask depending on the aperture density. c element according to claim 2, wherein said conductor film containing Ir, silicon and nitrogen is arranged between said oxide-based dielectric film and said conductor film containing Ir and silicon. 4. A dielectric element comprising: an insulator film including an oxide-based dielectric film; and an electrode including a first conductor film consisting of Ir and silicon, further comprising a conductive crystal film arranged between said first conductor film and said insulator film. 5. The dielectric element according to claim 4 wherein said conductive crystal film is a metal film containing at least one metal selected from a group consisting of Pt, Ir, Ru and Re. 6. The dielectric element according to claim 4, wherein said conductive crystal film is a metal oxide film containing at least one metal selected from a group consisting of Pt, Ir, Ru and Re. 7. A dielectric element comprising: an insulator film including an oxide-based dielectric film; and an electrode including a first conductor film consisting of Ir and silicon, wherein said electrode including said first conductor film is an upper electrode, wherein said upper electrode includes a plurality of layers, and at least the uppermost layer of said upper electrode is formed by said first conductor film. 8. A dielectric element, comprising: an insulator film including an oxide-based dielectric film; and an electrode including a first conductor film comprising Ir and silicon, wherein said electrode including said first conductor film is an upper electrode, wherein said upper electrode includes a plurality of layers, and at least the uppermost layer of said upper electrode is formed by said first conductor film, and wherein said upper electrode is formed by a multilayer structure of said first conductor film, containing Ir, silicon and nitrogen, forming said uppermost layer and a second conductor film containing Ir. 9. The dielectric element according to claim 1, wherein said first conductor film is arranged between a conductive material and said insulator film. 10. The dielectric element according to claim 9, wherein said conductive material is converted to an insulating material when oxidized, and said first conductor film and said insulator film are successively formed on said conductive material. 11. The dielectric element according to claim 10, wherein said conductive material includes either a polycrystalline silicon plug or a tungsten plug. 12. The dielectric element according to claim 1, further comprising a conductive crystal film arranged between said first conductor film and said insulator film. 13. The dielectric element according to claim 12, wherein said conductive crystal film is a metal film containing at least one metal selected from the group consisting of Pt, Ir, Ru and Re. 14. The dielectric element according to claim 12, wherein said conductive crystal film is a metal oxide film containing at least one metal selected from the group consisting of Pt, Ir, Ru and Re. 15. The dielectric element according to claim 1, wherein said electrode including said first conductor film is an upper electrode. 16. The dielectric element according to claim 15, wherein said upper electrode includes a plurality of layers, and at least the uppermost layer of said upper electrode is formed by said first conductor film.
Nakasato, Shinji; Inao, Yasuhisa, Device and method for controlling close contact of near-field exposure mask, and near-field exposure mask for the same.
Yamaguchi, Takako; Inao, Yasuhisa, Exposure mask, method of designing and manufacturing the same, exposure method and apparatus, pattern forming method, and device manufacturing method.
Yamaguchi, Takako; Kuroda, Ryo, Method of detecting relative position of exposure mask and object to be exposed, alignment method, and exposure method using the same.
Ito, Toshiki; Mizutani, Natsuhiko; Terao, Akira, Near field exposure mask, method of forming resist pattern using the mask, and method of producing device.
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