Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/44
출원번호
US-0120836
(2002-04-11)
발명자
/ 주소
Sudijono, John Leonard
Aliyu, Yakub
Zhou, Mei Sheng
Chooi, Simon
Gupta, Subhash
Roy, Sudipto Ranendra
Ho, Paul Kwok Keung
Xu, Yi
출원인 / 주소
Chartered Semiconductor Manufacturing Ltd.
대리인 / 주소
Saile, George O.Pike, Rosemary L. S.Stanton, Stephen G.
인용정보
피인용 횟수 :
20인용 특허 :
6
초록▼
A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bo
A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.
대표청구항▼
1. A method of bonding a wire to a metal bonding pad, comprising the steps of: providing a semiconductor die structure having an exposed metal bonding pad within a chamber; said bonding pad having an upper surface; producing a hydrogen-plasma within said chamber from a plasma source; pre-cleani
1. A method of bonding a wire to a metal bonding pad, comprising the steps of: providing a semiconductor die structure having an exposed metal bonding pad within a chamber; said bonding pad having an upper surface; producing a hydrogen-plasma within said chamber from a plasma source; pre-cleaning and passivating said metal bonding pad with said hydrogen-plasma to remove any metal oxide formed on said metal bonding pad upper surface; and bonding a wire to said cleaned and passivated metal bonding pad while the metal bonding pad is within the hydrogen-plasma. 2. The method of claim 1, wherein said metal bonding pad is comprised of a material selected from the group comprising Al, Al-Cu, and Cu, and said wire is comprised of a material selected from the group comprising Au, a copper alloy and copper. 3. The method of claim 1, wherein said plasma source is direct. 4. The method of claim 1, wherein said plasma source is a parallel plate with RF. 5. The method of claim 1, wherein said plasma source is downstream. 6. The method of claim 1, wherein said hydrogen source is selected from the group comprising NH3,H2,N2+H2,He+H2and Ar+H2. 7. The method of claim 1, further including the step of masking said semiconductor die structure to expose said metal bonding pad before said hydrogen-plasma production step. 8. A method of bonding a copper wire to a copper bonding pad, comprising the steps of: providing a semiconductor die structure having an exposed copper bonding pad within a chamber; said copper bonding pad having an upper surface; producing a hydrogen-plasma within said chamber from a plasma source; pre-cleaning and passivating said copper bonding pad with said hydrogen-plasma to remove any copper oxide formed on said copper bonding pad upper surface; and bonding a copper wire to said passivated copper bonding pad while the copper bonding pad is within the hydrogen-plasma. 9. The method of claim 8, wherein said plasma source is direct. 10. The method of claim 8, wherein said plasma source is a parallel plate with RF. 11. The method of claim 8, wherein said plasma source is downstream. 12. The method of claim 8, wherein said hydrogen source is selected from the group comprising NH3,H2,,N2+H2,He+H2,and Ar+H2. 13. The method of claim 8, further including the step of masking said semiconductor die structure to expose said copper bonding pad before said hydrogen-plasma production step. 14. A method of bonding a copper wire to a copper bonding pad, comprising the steps of: providing a semiconductor die structure having an exposed copper bonding pad within a chamber; said copper bonding pad having an upper surface; producing a hydrogen-plasma within said chamber from a plasma source; said hydrogen-source being selected from the group comprising NH3,H2,,N2+H2,He+H2,and Ar+H2; pre-cleaning and passivating said copper bonding pad with said hydrogen-plasma to remove any copper oxide formed on said copper bonding pad upper surface; and bonding a copper wire to said passivated copper bonding pad while the copper bonding pad is within the hydrogen-plasma. 15. The method of claim 14, wherein said plasma source is direct. 16. The method of claim 14, wherein said plasma source is a parallel plate with RF. 17. The method of claim 14, wherein said plasma source is downstream. 18. The method of claim 14, further including the step of masking said semiconductor die structure to expose said copper bonding pad before said hydrogen-plasma production step.
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이 특허에 인용된 특허 (6)
Weiler Peter M. (Palo Alto CA), Method and apparatus for capping metallization layer.
Hsiao Yung-Kuan,TWX ; Wu Cheng-Ming,TWX ; Lee Yu-Hua,TWX, Method for reducing bonding pad loss using a capping layer when etching bonding pad passivation openings.
Spurlin, Tighe A.; Antonelli, George Andrew; Doubina, Natalia; Duncan, James E.; Reid, Jonathan D.; Porter, David, Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer.
Spurlin, Tighe A.; Lambert, Darcy E.; Singhal, Durgalakshmi; Antonelli, George Andrew, Methods for reducing metal oxide surfaces to modified metal surfaces using a gaseous reducing environment.
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