초록 ▼

A bandolier of syringes for use in an automated syringe handling system is provided. The automated syringe handling system generally receives syringes and fills the syringe with a substance, such as a medicament. In one exemplary embodiment, the syringe handling system is a system that disperses one

A bandolier of syringes for use in an automated syringe handling system is provided. The automated syringe handling system generally receives syringes and fills the syringe with a substance, such as a medicament. In one exemplary embodiment, the syringe handling system is a system that disperses one or more medicaments into the syringes in an automated manner. The bandolier includes a web, e.g., a strip of transparent material partially encapsulating bodies of syringes that are bound to the web at a prescribed interval. The bandolier includes a feature disposed within the prescribed interval and between the syringes with the feature being different from the surrounding web.

대표청구항 ▼

A bandolier of syringes for use in an automated syringe handling system is provided. The automated syringe handling system generally receives syringes and fills the syringe with a substance, such as a medicament. In one exemplary embodiment, the syringe handling system is a system that disperses one

A bandolier of syringes for use in an automated syringe handling system is provided. The automated syringe handling system generally receives syringes and fills the syringe with a substance, such as a medicament. In one exemplary embodiment, the syringe handling system is a system that disperses one or more medicaments into the syringes in an automated manner. The bandolier includes a web, e.g., a strip of transparent material partially encapsulating bodies of syringes that are bound to the web at a prescribed interval. The bandolier includes a feature disposed within the prescribed interval and between the syringes with the feature being different from the surrounding web. ferroelectric layer composed of SrBi2Ta2O9or Sr1-xBi2+x(Ta1-yNby)2O9(0≤x≤0.2, 0≤y≤1) having a layered perovskite structure on the bottom electrode layer; and a top electrode layer on the ferroelectric layer, wherein the ferroelectric layer is in (103)-orientation in an orthorhombic system or in (104)-orientation. 10. An electronic apparatus provided with the ferroelectric memory according to claim 9. 11. A ferroelectric memory according to claim 9, wherein: the Si single crystal substrate is a (111) substrate; the buffer layer is composed of metal oxide MO (M=Mg, Ca, Sr, Ba) having an NaCl structure being in (111)-orientation in a cubic system; and the bottom electrode layer is in (111)-orientation in a cubic system or in (111)-orientation in a pseudo-cubic system. 12. An electronic apparatus provided with the ferroelectric memory according to claim 11.