초록 ▼

Semiconductor devices comprising interconnects with improved adhesion of barrier layers to dielectric layers are formed by laser thermal annealing, in N2and H2, exposed surfaces of a dielectric layer defining an opening, and then depositing Ta to form a composite layer lining the opening. Embodiment

Semiconductor devices comprising interconnects with improved adhesion of barrier layers to dielectric layers are formed by laser thermal annealing, in N2and H2, exposed surfaces of a dielectric layer defining an opening, and then depositing Ta to form a composite layer lining the opening. Embodiments include forming a dual damascene opening in an interlayer dielectric comprising F-containing dielectric material, such as F-silicon oxide derived from F-TEOS, impinging a pulsed laser light beam on exposed surfaces of the F-silicon oxide defining the opening in a flow of N2and H2, and then depositing Ta to form a composite barrier layer comprising graded tantalum nitride and α-Ta lining the opening. Laser thermal annealing in N2and H2depletes the exposed silicon oxide surfaces of F while enriching the surfaces with N2. Deposited Ta reacts with the N2in the N2-enriched surface region to form a composite barrier layer comprising a graded layer of tantalum nitride and a layer of α-Ta thereon. Cu is then deposited, CMP conducted and a capping layer deposited to form the dual damascene structure.

대표청구항 ▼

1. A method of manufacturing a semiconductor device, the method comprising: forming an opening in a dielectric layer;laser thermal anneal exposed surfaces of the dielectric layer in nitrogen (N2) and hydrogen (H2) to form the N2-enriched surface region; andforming a composite barrier layer comprisin

1. A method of manufacturing a semiconductor device, the method comprising: forming an opening in a dielectric layer;laser thermal anneal exposed surfaces of the dielectric layer in nitrogen (N2) and hydrogen (H2) to form the N2-enriched surface region; andforming a composite barrier layer comprisinga layer of graded tantalum nitride containing N2in an amount decreasing in a direction away from the N2-enriched surface region lining the opening; anda layer of alpha tantalum (a-Ta) on the traded tantalum nitride layer.2. The method according to claim 1, wherein the dielectric layer contains fluorine (F).3. The method according to claim 2, wherein the dielectric layer comprises F-containing silicon oxide.4. The method according to claim 3, wherein the F-containing silicon dioxide is derived from F-doped tetraethyl orthosilicate (F-TEOS).5. The method according to claim 2, comprising laser thermal annealing to form a region on the exposed surfaces depleted in F and enriched in N2.6. The method according to claim 5, comprising forming the composite barrier layer by depositing Ta.7. The method according to claim 6, comprising filling the opening with copper (Cu) or a Cu alloy.8. The method according to claim 7, where the opening is a dual damascene opening comprising a lower via hole section in communication with an upper trench section, the method comprising filling the opening to form a lower via connected to an upper line.9. The method according to claim 5, comprising a laser thermal annealing by impinging a pulsed laser light beam on the exposed surfaces at a radiant fluence of about 0.109 to about 0.136 joules/cm2.10. The method according to claim 9, comprising laser thermal annealing to elevate the temperature of the exposed surfaces to about 400° C. to about 500° C.11. The method according to claim 5, comprising a laser thermal annealing employing:a N2flow rate of about 200 to about 2,000 sccm; anda H2flow rate of about 200 to about 2,000 sccm.12. The method according to claim 1, comprising laser thermal annealing to form a N2-enriched region on the exposed surfaces of the dielectric layer.13. The method according to claim 12, comprising laser thermal annealing by impinging a pulsed laser light beam on the exposed surfaces of the dielectric layer at a radiant fluence of about 0.109 to about 0.136 joules/cm2.14. The method according to claim 13, comprising laser thermal annealing to elevate the temperature of the exposed surfaces to about 400° C. to about 500° C.15. The method according to claim 12, comprising laser thermal annealing employing:a N2flow rate of about 200 to about 2,000 sccm; anda H2flow rate of about 200 to about 2,000 sccm.16. The method according to claim 12, comprising forming the composite barrier layer by depositing Ta.