[특허]Method for operating a wind farm

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특허 상세정보

MyON담기

내보내기 페이스북 공유 트위터 공유 카카오톡 공유

Method for operating a wind farm

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	F03D-009/00 G05D-011/00
미국특허분류(USC)	290/044; 700/286; 700/291
출원번호	US-0089812 (2002-06-27)
우선권정보	DE-0048196 (1999-10-06)
국제출원번호	PCT/EP00/06493 (2000-07-08)
국제공개번호	WO01/25630 (2001-04-12)
발명자 / 주소	Wobben, Aloys
대리인 / 주소	Steinberg, Neil A.
인용정보	피인용 횟수 : 30 인용 특허 : 7

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A method and apparatus for operating a wind park having maximum permissible output power and a plurality of wind power installations wherein each wind power installation includes an output power and a maximum rated output power. The apparatus, in one aspect, includes a processing unit that is coupled to the plurality of wind power installations to control the output power of at least one of the wind power installations. The processing unit may determine the total output power of all of the plurality of wind power installations and, in response thereto, control the output power of at least one of the plurality of wind power installation so that the total output power of all of the plurality of wind power installations does not exceed the maximum permissible output power of the wind park. The method for operating the wind park, in one aspect, includes determining the output power of the plurality of wind power installations and controlling the output power of at least one of the plurality of wind power installations by reducing the output power of at least one of the plurality of wind power installations if the total output power of all of the plurality of wind power installations exceeds the maximum permissible output power of the wind park. o increase its stiffness and thereby enhance its capacity to constrain the substrate to prevent its warpage during thermal cycling. The thickened stiffener is coupled with an elevated heat spreader lid, that is, a heat spreader lid with a elevated central portion configured for engagement with the picture frame stiffener such that a central portion of at least one side of the heat spreader lid extends into the opening in the picture frame stiffener. As a result, the heat spreader lid is in a position to constrain warpage of the package by applying a counter force against a warping die. d the lid.18. The integrated circuit package recited in claim 17 wherein the lid comprises a support member coupled to the substrate.19. The integrated circuit package recited in claim 17 wherein the lid comprises material from the group consisting of copper and aluminum-silicon-carbide.20. The integrated circuit package recited in claim 17 wherein the lid comprises at least one metal or organic layer to which the thermally conductive element is coupled.21. The integrated circuit package recited in claim 20 wherein the at least one metal or organic layer comprises nickel or gold.22. The integrated circuit package recited in claim 17 wherein the solderable thermally conductive element comprises material, including one or more alloys, from the group consisting of tin, bismuth, silver, indium, and lead.23. The integrated circuit package recited in claim 17 wherein the substrate is an organic substrate and wherein the die is coupled to the substrate through a land grid array.24. The integrated circuit package recited in claim 17 and further comprising:a diffusion layer between the adhesion layer and the solder-wettable layer.25. The integrated circuit package recited in claim 24 wherein the layers comprise material, including one or more alloys, from the group consisting of titanium, chromium, zirconium, nickel, vanadium, and gold.26. The integrated circuit package recited in claim 17 wherein the solderable thermally conductive element has a liquidus temperature in the range of 138 to 157 degrees Centigrade.27. An electronic assembly comprising: at least one integrated circuit package comprising:a substrate;a die positioned on a surface of the substrate, the die having a back surfacean adhesion layer of metal formed on the back surface;a solder-wettable layer formed on the adhesion layer;a lid positioned over the die; anda solderable thermally conductive element coupling the solder-wettable layer and the lid.28. The electronic assembly recited in claim 27 wherein the lid comprises a support member coupled to the substrate.29. The electronic assembly recited in claim 27 wherein the solderable thermally conductive element comprises material, including one or more alloys, from the group consisting of tin, bismuth, silver, indium, and lead.30. The electronic assembly recited in claim 27 wherein the substrate is an organic substrate and wherein the die is coupled to the substrate through a land rid array.31. The electronic assembly recited in claim 27 and further comprising:a diffusion layer between the adhesion layer and the solder-wettable layer.32. The electronic assembly recited in claim 31 wherein the layers comprise material, including one or more alloys, from the group consisting of titanium, chromium. zirconium, nickel, vanadium, and gold.33. An electronic system comprising an electronic assembly having at least one integrated circuit package comprising: a substrate;a die positioned on a surface of the substrate, the die having a back surface;an adhesion layer of metal formed on the back surface;a solder-wettable layer formed on the adhesion layer,a lid positioned over the die; anda solderable thermally conductive element coupling the solder-wettable layer and the lid.34. The electronic system recited in claim 33 wherein the solderable thermally conductive element comprises material, including one or more alloys, from the group consisting of tin, bismuth, silver, indium, and lead.35. The electronic system recited in claim 33 wherein the substrate is an organic substrate, wherein the die is coupled to the substrate through a land grid array, and wherein the lid comprises a support member coupled to the substrate.36. The electronic system recited in claim 33 and further comprising:a diffusion layer between the adhesion layer and the solder-wettable laye r.37. The electronic system recited in claim 36 wherein the layers comprise material, including one or more alloys, from the group consisting of titanium, chromium, zirconium, nickel, vanadium, and gold.38. An assembly comprising: a die having a surface;an adhesion layer of metal formed on the surface; anda solder-wettable layer formed on the adhesion layer to receive a solderable thermally conductive element.39. The assembly recited in claim 38 wherein the adhesion layer comprises material, including one or more alloys, from the group consisting of titanium, chromium, zirconium, nickel, vanadium, and gold.40. The assembly recited in claim 38 wherein the adhesion layer comprises titanium.41. The assembly recited in claim 38 wherein the solder-wettable layer comprises material, including one or more alloys, from the group consisting of titanium, chromium, zirconium, nickel, vanadium, and gold.42. The assembly recited in claim 38 wherein the solder-wettable layer comprises one of nickel and gold.43. The assembly recited in claim 38 wherein the solderable thermally conductive element comprises material, including one or more alloys, from the group consisting of tin, bismuth, silver, indium, and lead.44. The assembly recited in claim 38 wherein the solderable thermally conductive element has a liquidus temperature in the range of 138 to 157 degrees Centigrade.45. The assembly recited in claim 38 and further comprising:a diffusion layer formed between the adhesion layer and the solder-wettable layer.46. The assembly recited in claim 45 wherein the diffusion layer comprises material, including one or more alloys, from the group consisting of titanium, chromium, zirconium, nickel, vanadium, and gold.47. The assembly recited in claim 45 wherein the diffusion layer comprises nickel-vanadium.48. An assembly comprising: a die having a surface;an adhesion layer of metal coupled to the surface;a solder-wettable layer coupled to the adhesion layer;a lid; anda thermal interface of solder material to couple the lid to the solder-wettable layer.49. The assembly recited in claim 48 wherein the solder material comprises material, including one or more alloys, from the group consisting of tin, bismuth, silver, indium, and lead.50. The assembly recited in claim 48 wherein the solder material has a liquidus temperature of 150 degrees Centigrade or less.51. The assembly recited in claim 48 wherein the solder material has a liquidus temperature of 140 degrees Centigrade or less.52. The assembly recited in claim 48 wherein the solder material has a liquidus temperature in the range of 138 to 157 degrees Centigrade.

이 특허에 인용된 특허 (7)

이 특허를 인용한 특허 피인용횟수: 30

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Method for operating a wind farm

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Method for operating a wind farm

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이 특허에 인용된 특허 (7)

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