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A method of associating deferral procedures to a fault model for complex systems based on historical data, the method including the steps of: analyzing historical data for deferral information to identify deferral procedures; associating each of the deferral procedures with a corresponding one or mo

A method of associating deferral procedures to a fault model for complex systems based on historical data, the method including the steps of: analyzing historical data for deferral information to identify deferral procedures; associating each of the deferral procedures with a corresponding one or more standard repairs; linking each of the standard repairs with a fault code; and associating each of the deferral procedures with one or more of the fault codes that were linked, respectively, with the one or more standard repairs to thereby provide a set of associations between deferral procedures and fault codes. The method may be implemented in a software program and the program may advantageously be employed in an aircraft maintenance and operations support system for automatically associating deferral procedures with an aircraft fault model based on historical data.

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A method of associating deferral procedures to a fault model for complex systems based on historical data, the method including the steps of: analyzing historical data for deferral information to identify deferral procedures; associating each of the deferral procedures with a corresponding one or mo

A method of associating deferral procedures to a fault model for complex systems based on historical data, the method including the steps of: analyzing historical data for deferral information to identify deferral procedures; associating each of the deferral procedures with a corresponding one or more standard repairs; linking each of the standard repairs with a fault code; and associating each of the deferral procedures with one or more of the fault codes that were linked, respectively, with the one or more standard repairs to thereby provide a set of associations between deferral procedures and fault codes. The method may be implemented in a software program and the program may advantageously be employed in an aircraft maintenance and operations support system for automatically associating deferral procedures with an aircraft fault model based on historical data. with the material between the process and another wet process is evaluated in a manner that considering the following selection criteria:(i) an etchant which is determined not to dissolve the material in the dissolution test in (a);(ii) an etchant which is determined that there are no residues by adhesion in the adhesion property test in (c);(iii) an etchant which has been determined that there are residues by adhesion in the adhesion property test in (c) and which is determined that an estimated adhesion surface density is less than a given contaminant surface density limit within which the properties of the semiconductor device are not deteriorated, by calculating an estimated concentration of dissolved ion or molecular species of an element derived from the material accumulated by dissolution in the etchant when processing a given number of substrates according to the structure of the semiconductor device, based on a dissolution rate obtained in the dissolution rate test in (b) and determining the estimated adhesion surface density from the estimated dissolution concentration, based on a correlation between the dissolution concentration in the etchant and the surface density of the residues adhering to the substrate surface, that is determined in the adhesion-property concentration dependency test in (d);(iv) an etchant containing a re-adhesion inhibitor, which is evaluated that the estimated adhesion surface density is equal to or higher than the contaminant surface density limit and is evaluated in a re-estimation that an estimated adhesion surface density becomes lower than the contaminant surface density limit by adding the re-adhesion inhibitor which is determined to be effective in the effective adhesion-inhibitor selection test in (e),an etchant meeting the selection criteria (i) to (iii) can be shared; an etchant further meeting the selection criterion (iv) can be shared after adding the re-adhesion inhibitor determined to be effective, or otherwise a remaining etchant can be shared only in wet processes where the etchant is not inevitably in contact with a material which may be a source of an element suspected to cause deterioration of the properties of the semiconductor device, andaccording to the evaluation, etchant sharing is employed in a cleaning-apparatus line configuration used in a wet process.3. The process for designing a cleaning-apparatus line configuration as claimed in claim 2, wherein the upper limit in a distribution range of a surface density of an element derived from the material, which is present on a substrate by immersing a clean substrate in an etchant free from the ion or molecule species of an element derived from the material for a given period and removing the etchant by a usual washing procedure, may be chosen the given contaminant surface density limit, which does not cause deterioration of the properties of the semiconductor device.4. A process for designing a cleaning-apparatus line configuration as claimed in claim 3, wherein the etchant employed in two or more wet processes in the manufacturing process is selected from the group consisting of an ammonium hydroxide-hydrogen peroxide mixture (APM), a sulfuric acid-hydrogen peroxide mixture (SPM), diluted hydrofluoric acid (DHF), an ammonium fluoride buffer-hydrofluoric acid mixture (BHF): buffered HF), a hydrochloric acid-hydrogen peroxide mixture (FPM), 50% hydrofluoric acid (HF), a hydrochloric acid-hydrogen peroxide mixture (HPM), phosphoric acid and hydrofluoric-nitric acid (a hydrofluoric acid-nitric acid mixture.5. The process for designing a cleaning-apparatus line configuration as claimed in claim 2, wherein the etchant employed in two or more wet processes in the manufacturing process is selected from the group consisting of an ammonium hydroxide-hydrogen peroxide mixture (APM), a sulfuric acid-hydrogen peroxide mixture (SPM), diluted hydrofluoric acid (DHF), an ammonium fluoride buffer-hydrofluoric acid mixture(BHF: buffered