Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-021/84
H01L-021/31
H01L-021/469
출원번호
US-0635422
(2000-08-10)
우선권정보
JP-0229518 (1999-08-13); JP-0250940 (1999-09-03)
발명자
/ 주소
Yamazaki, Shunpei
Ohtani, Hisashi
Tanaka, Koichiro
Kasahara, Kenji
Kawasaki, Ritsuko
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
73인용 특허 :
26
초록▼
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted there
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
대표청구항▼
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted there
To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size. device to said first semiconductor device, on a side opposite said substrate, said first interposer device having a first surface of a first area and a second surface of a second area less than said first area with a first pair of recesses formed on opposing edges of said first interposer device thus exposing said at least one bond pad on said active surface of said first semiconductor device, said second surface mounted to said active surface of said first semiconductor device; providing a second semiconductor device; and mounting said second semiconductor device on said first surface of said first interposer device, opposite said first semiconductor device and electrically connecting said second semiconductor device to either said first semiconductor device or to said substrate or both. 2. The method of forming a multiple semiconductor device stack apparatus according to claim 1, further comprising: providing a second interposer device having a first side and a second side; and mounting said second interposer device to said second semiconductor device on said first side, wherein said second interposer device includes a bond pad recess opening for allowing connection between either said first and second semiconductor devices or between said first and second semiconductor devices and said substrate or both. 3. A method of forming a multiple semiconductor device stack apparatus comprising; providing a substrate; providing a first semiconductor device having at least one bond pad on an active surface thereof; mounting and electrically connecting said first semiconductor device to said substrate; providing a first thermally conductive interposer device; mounting said first thermally conductive interposer device to said first semiconductor device, on a side opposite said substrate, said first thermally conductive interposer device having a first surface of a first area and a second surface of a second area less than said first area with a first pair of recesses formed on opposing edges of said first thermally conductive interposer device thus exposing said at least one bond pad on said active surface of said first semiconductor device, said second surface mounted to said active surface of said first semiconductor device; providing a second semiconductor device; and mounting said second semiconductor device on said first surface of said first thermally conductive interposer device, opposite said first semiconductor device and electrically connecting said second semiconductor device to either said first semiconductor device or to said substrate or both. 4. The method of claim 3, further comprising: providing a second interposer device having a first side and a second side; and mounting said second interposer device to said second semiconductor device on said first side thereof, wherein said second interposer device includes a bond pad recess opening for allowing connection between either said first and second semiconductor devices or between said first and second semiconductor devices and said substrate or both. 5. The method of claim 4, wherein said second interposer device comprises a thermally conductive interposer.6. The method of claim 4, wherein said second interposer device comprises a thermally insulative interposer.7. The method of claim 4, wherein said second interposer device comprises a thermally conductive and thermally insulative interposer.8. The method of claim 3, wherein said first thermally conductive interposer device includes a thermally insulative portion.9. (Amended) A method for forming a stack of multiple semiconductor devices comprising: providing a substrate; providing a first semiconductor device having at least one bond pad on an active surface thereof; mounting and electrically connecting said first semiconductor device to said substrate; providing a first interposer device; mounting said first interposer device to said first semiconductor device, o n a side opposite said substrate, said first interposer device having a first surface of a first area and a second surface of second area less than said first area with a first pair of recesses formed on opposing edges of said first interposer device thus exposing said at least one bond pad on said active surface of said first semiconductor device, said second surface mounted to said active surface of said first semiconductor device; providing a second semiconductor device; and mounting said second semiconductor device on said first surface of said first interposer device, opposite said first semiconductor device and electrically connecting said second semiconductor device to either said first semiconductor device or to said substrate or both. 10. The method of claim 9, further comprising: providing a second interposer device having a first side and a second side; and mounting said second interposer device to said second semiconductor device on said first side, wherein said second interposer device includes a bond pad recess opening for allowing connection between either said first and second semiconductor devices or between said first and second semiconductor devices and said substrate or both. 11. A method of forming a stack of semiconductor devices comprising: providing a substrate; providing a first semiconductor device having at least one bond pad on an active surface thereof; mounting and electrically connecting said first semiconductor device to said substrate; providing a first thermally conductive interposer device; mounting said first thermally conductive interposer device to said first semiconductor device, on a side opposite said substrate, said first thermally conductive interposer device having a first surface of a first area and a second surface of a second area less than said first area with a first pair of recesses formed on opposing edges of said first thermally conductive interposer device thus exposing said at least one bond pad on said active surface of said first semiconductor device, said second surface mounted to said active surface of said first semiconductor device; providing a second semiconductor device; and mounting said second semiconductor device on said first surface of said first thermally conductive interposer device, opposite said first semiconductor device and electrically connecting said second semiconductor device to either said first semiconductor device or to said substrate or both. 12. The method of claim 11, further comprising: providing a second interposer device having a first side and a second side; and mounting said second interposer device to said second semiconductor device on said first side thereof, wherein said second interposer device includes a bond pad recess opening for allowing connection between either said first and second semiconductor devices or between said first and second semiconductor devices and said substrate or both. 13. The method of claim 12, wherein said second interposer device comprises a thermally conductive interposer.14. The method of claim 12, wherein said second interposer device comprises a thermally insulative interposer.15. The method of claim 12, wherein said second interposer device comprises a thermally conductive and thermally insulative interposer.16. The method of claim 11, wherein said first thermally conductive interposer device includes a thermally insulative portion.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (26)
Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Kusumoto Naoto,JPX ; Tanaka Koichiro,JPX, Apparatus and method for laser radiation.
Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Ishihara Hiroaki,JPX, Method of manufacturing a semiconductor device by using a homogenized rectangular laser beam.
Jennings, Dean; Liang, Haifan; Yam, Mark; Parihar, Vijay; Mayur, Abhilash J.; Hunter, Aaron Muir; Adams, Bruce E.; Ranish, Joseph M., Annealing apparatus using two wavelengths of continuous wave laser radiation.
Tanaka, Koichiro; Yamamoto, Yoshiaki; Kosaka, Nami, Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus.
Yamazaki, Shunpei; Shibata, Hiroshi; Tanaka, Koichiro; Hiroki, Masaaki; Akiba, Mai, Laser irradiation method and method of manufacturing a semiconductor device.
Yamazaki,Shunpei; Shibata,Hiroshi; Tanaka,Koichiro; Hiroki,Masaaki; Akiba,Mai, Method of manufacturing a semiconductor device that includes patterning sub-islands.
Kim, Sung-Hwan; Kim, Sang-Su; Jeong, Byoung-Seong; Song, Je-Hyun; Lee, Tae-Hun; Yang, Sung-Won; Kim, Tae-Hyung, Multi-functional apparatus for testing and etching substrate and substrate processing apparatus including the same.
Kokubo,Chiho; Shiga,Aiko; Yamazaki,Shunpei; Miyairi,Hidekazu; Dairiki,Koji; Tanaka,Koichiro, Semiconductor device and method of manufacturing the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.