IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0205776
(2002-07-26)
|
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
12 인용 특허 :
8 |
초록
▼
A semiconductor processing system has a liquid chemical metering and delivery system including a process tank and a metering vessel. Fluid level detectors detect the fluid level in the process tank and metering vessel. A two stage fill valve fills the metering vessel from bottom to top. A dispense v
A semiconductor processing system has a liquid chemical metering and delivery system including a process tank and a metering vessel. Fluid level detectors detect the fluid level in the process tank and metering vessel. A two stage fill valve fills the metering vessel from bottom to top. A dispense valve dispenses the metered contents of the vessel into a process tank via gravity, to form a chemical solution in the process tank, with high mixing accuracy. The volumes of the metering vessel and process tank and the inflow and outflow rates are set to provide 100% up time to a process chamber which uses the chemical solution to process semiconductor wafers or other flat media.
대표청구항
▼
A semiconductor processing system has a liquid chemical metering and delivery system including a process tank and a metering vessel. Fluid level detectors detect the fluid level in the process tank and metering vessel. A two stage fill valve fills the metering vessel from bottom to top. A dispense v
A semiconductor processing system has a liquid chemical metering and delivery system including a process tank and a metering vessel. Fluid level detectors detect the fluid level in the process tank and metering vessel. A two stage fill valve fills the metering vessel from bottom to top. A dispense valve dispenses the metered contents of the vessel into a process tank via gravity, to form a chemical solution in the process tank, with high mixing accuracy. The volumes of the metering vessel and process tank and the inflow and outflow rates are set to provide 100% up time to a process chamber which uses the chemical solution to process semiconductor wafers or other flat media. et al.; US-5115803, 19920500, Sioutas, 128/200.23; US-5139016, 19920800, Waser, 128/200.16; US-5140740, 19920800, Weigelt; US-5152456, 19921000, Ross et al., 239/102.2; US-5157372, 19921000, Langford; US-5164740, 19921100, Ivri, 346/001.1; US-5170782, 19921200, Kocinski, 128/200.16; US-5186164, 19930200, Raghuprasad; US-5186166, 19930200, Riggs et al.; US-5198157, 19930300, Bechet, 264/009; US-5217492, 19930600, Guire et al.; US-5258041, 19931100, Guire et al.; US-5261601, 19931100, Ross et al., 239/102.2; US-5263992, 19931100, Guire; US-5297734, 19940300, Toda, 239/102.2; US-5299739, 19940400, Takahashi et al., 239/102.2; US-5309135, 19940500, Langford; US-5312281, 19940500, Takahashi et al., 446/025; US-5320603, 19940600, Vetter et al.; US-5347998, 19940900, Hodson et al., 128/200.23; US-5414075, 19950500, Swan et al.; US-5415161, 19950500, Ryder, 128/200.23; US-5452711, 19950900, Gault; US-5477992, 19951200, Jinks et al., 222/402.16; US-5487378, 19960100, Robertson et al., 128/200.16; US-5512329, 19960400, Guire; US-5512474, 19960400, Clapper et al.; US-5515841, 19960500, Robertson et al., 128/200.16; US-5515842, 19960500, Ramseyer et al.; US-5518179, 19960500, Humberstone et al., 239/102.2; US-5533497, 19960700, Ryder, 128/200.21; US-5563056, 19961000, Swan et al.; US-5579757, 19961200, McMahon et al., 128/200.21; US-5586550, 19961200, Ivri et al., 128/200.16; US-5637460, 19970600, Swan et al.; US-5654162, 19970800, Guire et al.; US-5654460, 19970800, Rong; US-5657926, 19970800, Toda; US-5665068, 19970900, Takamura; US-5692644, 19971200, Gueret; US-5707818, 19980100, Chudzik et al.; US-5714360, 19980200, Swan et al.; US-5714551, 19980200, Bezwada et al.; US-5718222, 19980200, Lloyd et al.; US-5744515, 19980400, Clapper; US-5758637, 19980600, Ivri et al., 128/200.16; US-5893515, 19990400, Hahn et al.; US-5938117, 19990800, Ivri, 239/004; US-6012450, 20000100, Rubsamen; US-6014970, 20000100, Ivri et al.; US-6085740, 20000700, Ivri et al.
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