Gas purification system with an integrated hydrogen sorption and filter assembly
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B01D-050/00
B01D-053/04
출원번호
US-0614649
(2000-07-12)
발명자
/ 주소
Arquin, Pierre J.
Lindahl, Nels W.
Canaan, Mark A.
출원인 / 주소
SAES Pure Gas, Inc.
대리인 / 주소
Perkins Coie LLP
인용정보
피인용 횟수 :
3인용 특허 :
13
초록▼
The present invention provides a gas purification system with improved efficiency, simpler construction, cost reduction, form factor improvements, and increased durability. The present invention provides cost and form factor improvements through fewer components overall and through utilizing multipl
The present invention provides a gas purification system with improved efficiency, simpler construction, cost reduction, form factor improvements, and increased durability. The present invention provides cost and form factor improvements through fewer components overall and through utilizing multiple integrated components. Prior art gas purification system are more bulky and complicated. The present invention achieves increased thermal efficiency through utilization of a regenerative heat exchanger to recapture a portion of the heat energy transferred to the gas during the purification process. Prior art purifiers lacked a regenerative heat exchanger. The present invention integrates the two components into one integrated heater and purification vessel assembly. The present invention integrates the two discrete components into one integrated hydrogen sorption and particle filter assembly. The integrated hydrogen sorption and particle filter assembly is also capable of operating at higher temperatures. This cases maintenance and manufacture. The resulting gas purification system is simpler through utilizing fewer components, smaller by utilizing fewer and integrated components, and reduced cost through fewer components, smaller components and through reduced manufacture labor requirements.
대표청구항▼
1. A method for purifying a gas, the method suitable for purifying gas to a level of purity sufficient for semiconductor manufacturing, the method comprising the acts of: cooling the gas less than 100 degrees C; flowing the gas under pressure into a purification system enclosure via an inlet;
1. A method for purifying a gas, the method suitable for purifying gas to a level of purity sufficient for semiconductor manufacturing, the method comprising the acts of: cooling the gas less than 100 degrees C; flowing the gas under pressure into a purification system enclosure via an inlet; contacting said gas under pressure with a hydrogen sorption unit including hydrogen sorption material and disposed within said gas purification system enclosure; flowing said gas thorough a particle filtering device within said gas purification system enclosure; and flowing said gas out of said gas purification system enclosure via an outlet. 2. A method for purifying a gas as recited in claim 1, wherein the particle filtering device is manufactured from a sintered metal.3. A method for purifying a gas as recited in claim 2, wherein the particle filtering devices is substantially capable of removing particles from said outlet gas flow as small as 0.003 mircon.4. A method for purifying a gas as recited in claim 2, wherein the particle filtering device is manufactured from at least one of nickel, stainless steel.5. A method for purifying a gas as recited in claim 2, wherein the particle filtering device is comprised of a plurality of filtering elements.6. A method for purifying a gas as recited in claim 5, wherein the filtering element is a cylindrical shape.7. A method for purifying a gas as recited in claim 5, wherein the filtering element is a disk shape.8. A method for purifying a gas as recited in claim 1, wherein the hydrogen sorption material is selected from among the group consisting of: Zr, Pd, Pt, Rh, Ru, Ni, Ti and alloys thereof.9. A method for purifying a gas as recited in claim 1, wherein the hydrogen sorption material is selected from among the group consisting of: Zr—V—Fe alloys and Zr—Fe alloys.10. The gas purification method as recited in claim 1, further comprised of the step thermally regenerating said hydrogen sponge by heating said hydrogen sponge to a temperature of approximately 200 degrees Celsius.11. A gas purification system comprising: a low temperature hydrogen source; said low temperature being less than 100 degrees C; a hydrogen removal unit including hydrogen sorption material; a particle filtering device; and an enclosure having an inlet and an outlet, said enclosure housing said hydrogen removal unit and filtering device, said hydrogen removal unit proximal to said inlet and in gaseous communication with said hydrogen source; said particle filtering device proximal to said outlet and in gaseous communication with said hydrogen removal unit and said outlet. 12. The gas purification system as recited in claim 11, wherein no material in said enclosure will outgas hydrogen during active hydrogen removal or filtering.13. The gas purification system recited in claim 11, wherein said particle filtering device is manufactured from a sintered metal.14. The gas purification system as recited in claim 13, wherein said metal is nickel or stainless steel.15. The gas purification system as recited in claim 13, wherein said particle filtering device is comprised of a plurality of filtering elements.16. The gas purification system as recited in claim 11, wherein said hydrogen sorption material is selected from among the group consisting of: Zr, Pd, Pt, Rh, Ru, Ni, Ti and alloys thereof.17. The gas purification system as recited in claim 11, wherein said hydrogen sorption material is selected form among the group consisting of: Zr—V—Fe alloys and Zr—Fe alloys.
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