IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0928447
(2001-08-14)
|
우선권정보 |
JP-0273429 (2000-09-08) |
발명자
/ 주소 |
- Nakamura, Ippei
- Sorori, Tadahiro
|
출원인 / 주소 |
- Fuji Photo Film Co., Ltd.
|
대리인 / 주소 |
Burns, Doane, Swecker & Mathis, L.L.P.
|
인용정보 |
피인용 횟수 :
10 인용 특허 :
22 |
초록
▼
A negative image-recording material which can be imagewise exposed to IR radiation from IR lasers and ensures direct image formation from digital data of a computer or the like. The material, when used in a lithographic printing plate, ensures good hardenability in an image area and exhibits good pr
A negative image-recording material which can be imagewise exposed to IR radiation from IR lasers and ensures direct image formation from digital data of a computer or the like. The material, when used in a lithographic printing plate, ensures good hardenability in an image area and exhibits good printing durability, even if not heated for image formation, and ensures a large number of good prints from the printing plate. The recording material contains (A) an IR absorber, (B) a radical generator having an onium salt structure, (C) a radical-polymerizing compound, and (D) a reducing additive, and this is imagewise exposed to IR radiation for image formation. Preferably, the reducing additive (D) is highly reactive with radicals and a reaction product with a radical has high reductivity. Preferred examples of the reducing additive are ether-type hydrogen donors, alcohol-type hydrogen donors, vinyl ethers and phosphine-type compounds.
대표청구항
▼
A negative image-recording material which can be imagewise exposed to IR radiation from IR lasers and ensures direct image formation from digital data of a computer or the like. The material, when used in a lithographic printing plate, ensures good hardenability in an image area and exhibits good pr
A negative image-recording material which can be imagewise exposed to IR radiation from IR lasers and ensures direct image formation from digital data of a computer or the like. The material, when used in a lithographic printing plate, ensures good hardenability in an image area and exhibits good printing durability, even if not heated for image formation, and ensures a large number of good prints from the printing plate. The recording material contains (A) an IR absorber, (B) a radical generator having an onium salt structure, (C) a radical-polymerizing compound, and (D) a reducing additive, and this is imagewise exposed to IR radiation for image formation. Preferably, the reducing additive (D) is highly reactive with radicals and a reaction product with a radical has high reductivity. Preferred examples of the reducing additive are ether-type hydrogen donors, alcohol-type hydrogen donors, vinyl ethers and phosphine-type compounds. est side is below the predetermined value, the step of dividing said selected region data into the plurality of pieces of rectangle data by dividing said selected region into the plurality of rectangles using lines that join the vertices of said selected region, the step of generating the larger pieces of rectangle data, and the step of judging whether the length of the shortest side is at least equal to the predetermined value are repeated. 5. The mask lithography data generation method according to claim 1, wherein said electron beam exposure mask is a mask used when performing electron beam lithography on a semiconductor device, and said selected region is a region that corresponds to a gate electrode of a transistor of said semiconductor device.6. The mask lithography data generation method according to claim 1, wherein said electron beam exposure mask is a mask used when performing electron beam lithography on a semiconductor device, and said selected region is a region that corresponds to a region including a contact in said semiconductor device.7. The mask lithography data generation method according to claim 1, wherein said electron beam exposure mask is a mask used when performing electron beam lithography on a semiconductor device, and said selected region is a region that corresponds to a region including a via hole in said semiconductor device. negative electrode mixture, said negative electrode mixture comprising a negative electrode active material in/from which lithium-ions can be occluded/released through discharging/charging; and said non-aqueous electrolytic solution comprising a lithium salt dissolved into organic solvent; wherein, said winding group is infiltrated into the non-aqueous electrolytic solution; porosity of the separator is larger than or the same as porosity of the positive electrode mixture and porosity of the negative electrode mixture; and an electric capacity of said secondary battery is more than 15 Ah; and wherein, when a layer thickness of the positive electrode mixture applied on both surfaces of the positive electrode collector ranges from 200 &mgr;m-300 &mgr;m, the porosity of the positive electrode mixture layer is set in accordance with formula (1), wherein x pis a number equal to the layer thickness, ypis the porosity, and 15%≦bp≦20%:y p=5%(xp)+bp (1).2. A non-aqueous electrolytic solution secondary battery according to claim 1, wherein the porosity of the positive electrode mixture is 25% to 35%, the porosity of the negative electrode mixture is 20% to 50%, and the porosity of the separator is 20% to 60%.3. A non-aqueous electrolytic solution secondary battery according to claim 1, wherein the negative electrode active material is an amorphous carbon.4. A non-aqueous electrolytic solution secondary battery according to claim 1, wherein the positive electrode active material is a lithium-manganese complex oxide.5. A non-aqueous electrolytic solution secondary battery according to claim 4, wherein the lithium-manganese complex oxide is expressed by a chemical formula LixMnyO2(0.4≦x≦1.35, 0.65≦y≦1.0), the porosity of the positive electrode mixture is set from 25% to 31%.6. A non-aqueous electrolytic solution secondary battery according to claim 5, wherein apparent density of the positive electrode mixture is set from 2.58 g/cm3to 2.72 g/cm3.7. A non-aqueous electrolytic solution secondary battery according to claim 5, wherein a mix proportion of the lithium-manganese complex oxide included in the positive electrode mixture is 80 weight % to 90 weight %.8. A non-aqueous electrolytic solution secondary battery according to claim 1, wherein a volume of the non-aqueous electrolytic solution accommodated in the battery container is set to be 1.0 times or more than a porosity volume of the winding group.9. A non-aqueous electrolytic solution secondary battery according to claim 8, wherein lithium-ion content of the non-aqueous electrolytic solution is not less than 0.7 mole/liter and not more than 1.5 mole/liter.10. A non-aqueous electrolytic solution secondary battery according to claim 8, wherein the volume of the non-aqueous electrolytic solution is set to be 1.25 times or more than the porosity volume of the winding group.11. A non-aqueous electrolytic solution secondary battery according to claim 1 wherein, when a layer thickness of the negative electrode mixture applied on both surfaces of the negative electrode collector, ranges from 140 &mgr;m-280 &mgr;m, the porosity of the negative electrode mixture layer, is set in accordance with formula (2), wherein xnis a number equal to the layer thickness, ynis the porosity, and 25%≦bn≦30%:y n=5%(xn)+bn (2).12. A non-aqueous electrolytic solution secondary battery according to claim 11, wherein the negative electrode active material is an amorphous carbon.13. A non-aqueous electrolytic solution secondary battery comprising a winding group and a non-aqueous electrolytic solution accommodated in a battery container, said winding group comprising a positive electrode and a negative electrode wound through a separator; said positive electrode comprising a positive electrode collector applied with a positive electrode mixture, said positive electrode mixture comprising a positive electrode active material from/in which lithium-ions
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