A method of manufacturing is described wherein a semiconductor device has a substrate as workpiece with an insulation film formed on the substrate, openings formed inside the insulation film, a first conductive film is formed inside the openings and on a surface of the insulation film, a second cond
A method of manufacturing is described wherein a semiconductor device has a substrate as workpiece with an insulation film formed on the substrate, openings formed inside the insulation film, a first conductive film is formed inside the openings and on a surface of the insulation film, a second conductive film is formed on the first conductive film, and the first and the second conductive films are formed inside openings by planarizing a surface of second conductive film and a surface part of the first conductive film with a fixed abrasive tool. The method includes supplying a first processing liquid, planarizing the surface of the second conductive film with the first processing liquid and the fixed abrasive tool, switching the supply of liquid from a first processing liquid to a second processing liquid, and planarizing the surface of second conductive film and the surface of part of the first conductive film with the second processing liquid and the fixed abrasive tool.
대표청구항▼
A method of manufacturing is described wherein a semiconductor device has a substrate as workpiece with an insulation film formed on the substrate, openings formed inside the insulation film, a first conductive film is formed inside the openings and on a surface of the insulation film, a second cond
A method of manufacturing is described wherein a semiconductor device has a substrate as workpiece with an insulation film formed on the substrate, openings formed inside the insulation film, a first conductive film is formed inside the openings and on a surface of the insulation film, a second conductive film is formed on the first conductive film, and the first and the second conductive films are formed inside openings by planarizing a surface of second conductive film and a surface part of the first conductive film with a fixed abrasive tool. The method includes supplying a first processing liquid, planarizing the surface of the second conductive film with the first processing liquid and the fixed abrasive tool, switching the supply of liquid from a first processing liquid to a second processing liquid, and planarizing the surface of second conductive film and the surface of part of the first conductive film with the second processing liquid and the fixed abrasive tool. al., 435/172.3; US-5744305, 19980400, Fodor et al., 435/006; US-5756289, 19980500, Hoekstra, 435/006; US-5817479, 19981000, Au-Young et al., 435/069.1; US-5830721, 19981100, Stemmer et al., 435/172.1; US-5837458, 19981100, Minshull et al., 435/006; US-5869336, 19990200, Meyer et al., 435/348; US-5877397, 19990300, Lonberg et al., 800/002; US-5948767, 19990900, Scheule et al., 514/044; US-6075181, 20000600, Kucherlapati et al., 800/025; US-6110490, 20000800, Thierry, 424/450; US-6114598, 20000900, Kucherlapati et al., 800/018; US-6117679, 20000900, Stemmer, 435/440; US-6150584, 20001100, Kucherlapati et al., 800/018; US-6340583, 20020100, Yan et al., 435/194
Carr Jeffrey W. (Fishkill NY) David Lawrence D. (Wappingers Falls NY) Guthrie William L. (Hopewell Junction NY) Kaufman Frank B. (Amawalk NY) Patrick William J. (Newburgh NY) Rodbell Kenneth P. (Poug, Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor.
Shigeru Harada JP; Yoshifumi Takata JP; Junko Izumitani JP, Semiconductor device having a multilayer wiring structure and pad electrodes protected from corrosion and method for fabricating the same.
Mravic ; deceased Brian ; Pasqualoni Anthony Mark ; Mahulikar Deepak, Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.