IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0391388
(1995-02-27)
|
우선권정보 |
JP-0029502 (1994-02-28); JP-0029506 (1994-02-28); JP-0029508 (1994-02-28) |
발명자
/ 주소 |
- Takeda, Nobuhiro
- Fujiwara, Akihiro
- Ogura, Shigeo
- Wada, Hiroyuki
|
출원인 / 주소 |
|
대리인 / 주소 |
Morgan & Finnegan, L.L.P.
|
인용정보 |
피인용 횟수 :
18 인용 특허 :
10 |
초록
▼
In an image sensing apparatus of this embodiment, a variable angle prism for preventing a camera shake is used to attain a pixel shift. Consequently, low resolution images free from a blur and high-resolution images obtained by the pixel shift can be selectively obtained with an extremely simple arr
In an image sensing apparatus of this embodiment, a variable angle prism for preventing a camera shake is used to attain a pixel shift. Consequently, low resolution images free from a blur and high-resolution images obtained by the pixel shift can be selectively obtained with an extremely simple arrangement. Whether a resolution increasing function is to be executed is properly determined in accordance with photographing conditions. Therefore, the resolution increasing function has no adverse effect on other functions. In addition, a power-saving effect can be enhanced since an unnecessary resolution increasing function is not performed. Since the resolution can be further increased by using a conventional camera shake preventing device, a larger amount of a high-frequency component can be detected. Consequently, focus detection can be performed accurately.
대표청구항
▼
In an image sensing apparatus of this embodiment, a variable angle prism for preventing a camera shake is used to attain a pixel shift. Consequently, low resolution images free from a blur and high-resolution images obtained by the pixel shift can be selectively obtained with an extremely simple arr
In an image sensing apparatus of this embodiment, a variable angle prism for preventing a camera shake is used to attain a pixel shift. Consequently, low resolution images free from a blur and high-resolution images obtained by the pixel shift can be selectively obtained with an extremely simple arrangement. Whether a resolution increasing function is to be executed is properly determined in accordance with photographing conditions. Therefore, the resolution increasing function has no adverse effect on other functions. In addition, a power-saving effect can be enhanced since an unnecessary resolution increasing function is not performed. Since the resolution can be further increased by using a conventional camera shake preventing device, a larger amount of a high-frequency component can be detected. Consequently, focus detection can be performed accurately. 1200, Godfrey et al., 356/152.1; US-4649274, 19870300, Hartmann; US-4760257, 19880700, Pollack et al., 250/330; US-4798462, 19890100, Byren; US-5047638, 19910900, Cameron et al.; US-5515161, 19960500, Blumenfeld; US-5577733, 19961100, Downing; US-5672872, 19970900, Wu et al.; US-5689110, 19971100, Dietz et al.; US-5783825, 19980700, Wiese; US-5838014, 19981100, Cabib et al., 250/504.R ich oxynitride treated with an RF purge and a silicon dioxide barrier providing a surface for the DARC coating that seals the silicon-rich oxide, silicon-rich nitride or the silicon-rich oxynitride; and a silicon nitride layer overlaying the silicon dioxide barrier, the silicon nitride layer being free of particles formed by one or more reactions with the DARC coating and the silicon nitride layer. 16. The semiconductor device of claim 15 wherein the barrier comprises silicon nitride.17. A semiconductor device, comprising: a DARC coating comprising one or more of silicon-rich oxide, silicon-rich nitride or a silicon-rich oxynitride treated with an RF purge and a silicon dioxide barrier formed by the RF purge, providing a hard, nonporous, non-reactive surface for the DARC coating that seals the silicon-rich oxide, silicon-rich nitride or the silicon-rich oxynitride; and a silicon nitride layer overlaying the silicon dioxide barrier, the silicon nitride layer being free of particles formed by one or more reactions with the DARC coating and the layer overlaying the DARC coating. 18. The semiconductor device of claim 17 wherein the silicon nitride layer overlying the DARC coating has a uniform topography.19. The semiconductor device of claim 17 wherein the layer overlying the DARC coating comprises silicon nitride.20. The semiconductor device of claim 17 wherein the DARC coating comprises a silicon nitride or silicon oxynitride selected from the group consisting of Six Oy :H, Six Oy Nz (H), Six Oy Nz and SixN4.21. The semiconductor device of claim 17 wherein the DARC coating comprises Six N4 wherein x is greater than 3.22. The semiconductor device of claim 17 and further including a layer underlying the DARC coating.23. The semiconductor device of claim 17 further comprising a layer underlying the DARC coating wherein the layer underlying the DARC coating comprises tungsten silicide.
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