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A process for the production of methanol comprises subjecting a hydrocarbon feedstock partial oxidation and an optional reformer to produce a partial oxidation reactor effluent comprising hydrogen, carbon monoxide and carbon dioxide; adding an amount of a hydrogen feedstock, at least a portion of wh

A process for the production of methanol comprises subjecting a hydrocarbon feedstock partial oxidation and an optional reformer to produce a partial oxidation reactor effluent comprising hydrogen, carbon monoxide and carbon dioxide; adding an amount of a hydrogen feedstock, at least a portion of which is obtained from electrolyzing water, to the partial oxidation reactor effluent to produce a synthesis gas stream having a predetermined ratio of hydrogen to carbon monoxide and optionally to carbon dioxide; subjecting the synthesis gas to methanol synthesis to produce a methanol product stream; and, recycling a substantial portion of the methanol product stream to the partial oxidation reactor.

대표청구항 ▼

A process for the production of methanol comprises subjecting a hydrocarbon feedstock partial oxidation and an optional reformer to produce a partial oxidation reactor effluent comprising hydrogen, carbon monoxide and carbon dioxide; adding an amount of a hydrogen feedstock, at least a portion of wh

A process for the production of methanol comprises subjecting a hydrocarbon feedstock partial oxidation and an optional reformer to produce a partial oxidation reactor effluent comprising hydrogen, carbon monoxide and carbon dioxide; adding an amount of a hydrogen feedstock, at least a portion of which is obtained from electrolyzing water, to the partial oxidation reactor effluent to produce a synthesis gas stream having a predetermined ratio of hydrogen to carbon monoxide and optionally to carbon dioxide; subjecting the synthesis gas to methanol synthesis to produce a methanol product stream; and, recycling a substantial portion of the methanol product stream to the partial oxidation reactor. benzothiadiazole, phenylenediamine, catechol, aminophenol, mercaptobenzothiazole, mercaptobenzotriazole, mercaptobenoxazole, melamine and thiadiazole.16. The apparatus of claim 6, wherein said solution application mechanism is configured to supply a second electrolytic planarizing solution to a polishing surface of said polishing pad.17. The apparatus of claim 1, wherein said polishing pad comprises windows configured to expose portions of said platen to facilitate creation of said an electric potential difference between said platen and said metallized surface.18. The apparatus of claim 1, wherein said workpiece carrier is configured to cause relative motion between said workpiece and said polishing pad.19. The apparatus of claim 18, wherein said relative motion is selected from the group consisting of: linear motion, orbital motion, circular motion, a combination of linear and orbital motion, a combination of linear and circular motion, a combination of orbital and circular motion, and a combination of linear, orbital and circular motion.20. The apparatus of claim 1, wherein said platen is configured to move in an orbital pattern.21. The apparatus of claim 1, wherein at least a portion of said platen comprises at least one of aluminum, titanium, gold, copper, tantalum and platinum.22. The apparatus of claim 1, wherein said metallized surface is of a material selected from the group consisting of: Cu, Cu/Al, Ni, Ag, Au, Ta, TaN, Ti, TIN, W, CoWP, NiP, and CoP.23. The apparatus of claim 1, wherein said workpiece carrier is configured to press said workpiece against said polishing pad at a pressure no greater than approximately 1 psi.24. The apparatus of claim 1, further comprising at least a first group and a second group of electrical conductors, wherein said power source supplies a first current to said first group and a second current to said second group, said first current being different from said second current.25. The apparatus of claim 1, wherein the apparatus is configured to monitor a change in an electrical resistance across the metallized surface on the workpiece upon the removal of the at least a portion of the metallized surface.26. The apparatus of claim 25, wherein the apparatus is further configured to detect an endpoint of planarization of the workpiece.27. The apparatus of claim 1, wherein said an electric potential difference is created between the metallized surface of the workpiece and the platen and the electric potential difference alternates between a first electric potential difference and a second electric potential difference.28. The apparatus of claim 27, wherein said first electric potential difference is zero.29. The apparatus of claim 27, wherein said electrical potential difference is constant.30. The apparatus of claim 1, further comprising a temperature control mechanism for counteracting the generation of heat at the metallized surface during planarization.31. The apparatus of claim 30, further comprising a solution application mechanism configured to supply an electrolytic planarizing solution to a polishing surface of said polishing pad and wherein said temperature control mechanism comprises a cooler for cooling said electrolytic planarizing solution before said solution is applied to said polishing pad.32. The apparatus of claim 30, wherein said workpiece carrier comprises a heat exchange fluid for regulating the temperature of said workpiece.33. The apparatus of claim 1, wherein said platen comprises heat conductivity material and wherein said platen is configured to be temperature controlled by a heat exchange fluid circulating therethrough.34. The apparatus of claim 1, wherein a distance between said platen and the metallized surface of the workpiece is not greater than approximately 3 mm.35. The apparatus of claim 34, wherein said distance is no greater than approximately 1 mm.36. The apparatus of claim 35, wherein said distance is no greater than approximately 2000 angstroms.37. A