IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0184321
(2002-06-27)
|
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
Schwegman, Lundberg, Woessner & Kluth, P.A.
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인용정보 |
피인용 횟수 :
7 인용 특허 :
82 |
초록
▼
Techniques of shallow trench isolation and devices produced therefrom. The techniques of shallow trench isolation utilize foamed polymers, cured aerogels or air gaps as the insulation medium. Such techniques facilitate lower dielectric constants than the standard silicon dioxide due to the cells of
Techniques of shallow trench isolation and devices produced therefrom. The techniques of shallow trench isolation utilize foamed polymers, cured aerogels or air gaps as the insulation medium. Such techniques facilitate lower dielectric constants than the standard silicon dioxide due to the cells of gaseous components inherent in foamed polymers, cured aerogels or air gaps. Lower dielectric constants reduce capacitive coupling concerns and thus permit higher device density in an integrated circuit device.
대표청구항
▼
Techniques of shallow trench isolation and devices produced therefrom. The techniques of shallow trench isolation utilize foamed polymers, cured aerogels or air gaps as the insulation medium. Such techniques facilitate lower dielectric constants than the standard silicon dioxide due to the cells of
Techniques of shallow trench isolation and devices produced therefrom. The techniques of shallow trench isolation utilize foamed polymers, cured aerogels or air gaps as the insulation medium. Such techniques facilitate lower dielectric constants than the standard silicon dioxide due to the cells of gaseous components inherent in foamed polymers, cured aerogels or air gaps. Lower dielectric constants reduce capacitive coupling concerns and thus permit higher device density in an integrated circuit device. 951113, 19900800, Huang et al., 257/369; US-4959700, 19900900, Yamazaki, 257/061; US-4969025, 19901100, Yamamoto et al., 257/056; US-4969031, 19901100, Kobayashi et al., 257/064; US-4986213, 19910100, Yamazaki et al., 118/719; US-4988638, 19910100, Huang et al., 438/154; US-5003356, 19910300, Wakai et al., 257/390; US-5012228, 19910400, Masuda et al., 345/088; US-5037766, 19910800, Wang, 438/161; US-5043772, 19910800, Yamazaki, 257/053; US-5051570, 19910900, Tsujikawa et al., 250/201.1; US-5055899, 19911000, Wakai et al., 257/061; US-5056895, 19911000, Kahn, 349/114; US-5057889, 19911000, Yamada et al., 257/353; US-5057898, 19911000, Adan et al., 257/369; US-5065208, 19911100, Shah, 257/587; US-5077223, 19911200, Yamazaki, 438/087; US-5082351, 19920100, Fergason, 349/086; US-5084905, 19920100, Sasaki et al., 257/776; US-5132754, 19920700, Serikawa et al., 257/057; US-5132820, 19920700, Someya et al., 349/043; US-5132821, 19920700, Nicholas, 349/043; US-5148301, 19920900, Sawatsubashi et al., 349/043; US-5151689, 19920900, Kabuto et al., 345/103; US-5236544, 19930800, Yamagata, 117/095; US-5247191, 19930900, Yamazaki et al., 257/072; US-5250818, 19931000, Saraswat et al., 257/066; US-5250931, 19931000, Misawa et al., 345/206; US-5261153, 19931100, Lucas, 029/830; US-5261156, 19931100, Mase et al., 029/832; US-5270224, 19931200, Furumura et al., 438/320; US-5270567, 19931200, Mori et al., 257/412; US-5274279, 19931200, Misawa et al., 326/121; US-5281840, 19940100, Sarma, 257/351; US-5287205, 19940200, Yamazaki et al., 349/174; US-5289030, 19940200, Yamazaki et al., 257/410; US-5313076, 19940500, Yamazaki et al., 257/410; US-5315132, 19940500, Yamazaki, 257/053; US-5327001, 19940700, Wakai et al., 257/350; US-5341012, 19940800, Misawa et al., 257/351; US-5349204, 19940900, Yamazak
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