IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0186618
(2002-07-02)
|
발명자
/ 주소 |
- Saunders, John
- Jacob, Jamey D.
- Gao, Dayong
- Myers, Michel A.
|
출원인 / 주소 |
|
대리인 / 주소 |
Antonelli, Terry, Stout, & Kraus, LLP
|
인용정보 |
피인용 횟수 :
50 인용 특허 :
5 |
초록
▼
A heating and cooling apparatus to be applied to an object to control the temperature of the object. A number of thermoelectric modules are adapted to be positioned in contact with the object in a pattern. A voltage source is adapted to apply a voltage to the thermoelectric modules to cause a temper
A heating and cooling apparatus to be applied to an object to control the temperature of the object. A number of thermoelectric modules are adapted to be positioned in contact with the object in a pattern. A voltage source is adapted to apply a voltage to the thermoelectric modules to cause a temperature change in each thermoelectric module so as to control the temperature of the object in accordance with the pattern and with the voltage applied to thermoelectric modules.
대표청구항
▼
A heating and cooling apparatus to be applied to an object to control the temperature of the object. A number of thermoelectric modules are adapted to be positioned in contact with the object in a pattern. A voltage source is adapted to apply a voltage to the thermoelectric modules to cause a temper
A heating and cooling apparatus to be applied to an object to control the temperature of the object. A number of thermoelectric modules are adapted to be positioned in contact with the object in a pattern. A voltage source is adapted to apply a voltage to the thermoelectric modules to cause a temperature change in each thermoelectric module so as to control the temperature of the object in accordance with the pattern and with the voltage applied to thermoelectric modules. d down-converter having an output, a first input receiving said filtered down-converted output signal and a second input receiving the directly modulated output signal generated by said IF frequency synthesizer and being present as a heterodyne frequency; a second IF bandpass filter of a lower IF plane connected to said output of said second down-converter; a first amplifier connected to said second IF bandpass filter; a third IF bandpass filter connected to said first amplifier; a second amplifier connected to said third IF bandpass filter; a demodulator connected to said second amplifier; said IF frequency synthesizer, said UHF frequency synthesizer, said low-noise amplifier, said UHF reception filter, said first down-converter, said first IF bandpass filter, said second down-converter, said second IF bandpass filter, said first amplifier, said third IF bandpass filter, said second amplifier and said demodulator defining a reception path; and a common antenna connected to said reception path and said transmission path via said time division duplex switch. 2. The circuit according to claim 1, wherein said up-converter in said transmission path suppresses image frequencies.3. The circuit according to claim 1, wherein the first divided UHF output frequency is 90° phase shifted in said first 1:n frequency divider in regards to the directly modulated output signal of said IF frequency synthesizer.4. The circuit according to claim 1, wherein said IF frequency synthesizer in said transmission path is a vector modulator performing digital frequency modulation, and said demodulator in said reception path is a demodulator selected from the group consisting of vector demodulators and frequency demodulators.5. The circuit according to claim 4, wherein the digital frequency modulation is a Gaussian minimum shift keying modulation.6. The circuit according to claim 4, wherein the digital frequency modulation is a Gaussian frequency shift keying modulation.7. The circuit according to claim 1, wherein the circuit has an operating frequency range of between 902 MHz and 928 MHz with a channel spacing of 200 kHz.8. The circuit according to claim 7, wherein said UHF frequency synthesizer generates alternateable frequencies between 1580 MHz and 1660 MHz, said IF frequency synthesizer forms frequencies at 99.9 MHz, said lower IF plane is located at a frequency of 10.7 MHz, and said upper IF plane is located at a frequency of 110.6 MHz.9. The circuit according to claim 7, wherein said UHF frequency synthesizer generates alternateable frequencies between 1495 MHz and 1575 MHz, said IF frequency synthesizer forms frequencies at 142.7 MHz, said lower IF plane is located at a frequency of 10.7 MHz, and said upper IF plane is located at a frequency of 153.4 MHz.10. The circuit according to claim 1, wherein the ultra high frequency (UHF) range is at 900 MHz.11. The circuit according to claim 1, wherein the radio transceiver is a cordless telephone. an image rejection, sub-harmonic frequency converter, realized in microstrip, particularly adapted to be used in mobile communication equipment, The converter avails of two identical sub-harmonic mixers employing each one or two pairs of diodes in antiparallel, obtained on a same silica substrate, and of a structure of hybrids performing appropriate phase combination adapted to suppress the image band in the converted signal. The mixers include filtering structures preferably consisting, but no limited to the same, of stubs λ/4 long, at the local oscillator frequency, having a free end, in short or open circuit, respectively. According to an alternative embodiment, said stubs are replaced by appropriate filters implemented with concentrated structures (L and C) performing the same transfer function of the stubs in microstrip. The sub-harmonic converter and a traditional converter can be jointly employed in a terminal mobile equipment operating in “Dual Mode service hand-held” (GSM 900 and DCS 1800) sharing a unique 900 MHz local oscillator. a voltage signal.4. The pressure responsive device according to claim 1, wherein the semiconductor substrate has another main surface opposite to the one main surface and has an air vent hole running from the concave to the another main surface.5. The pressure responsive device according to claim 4, wherein the package has an air vent hole on a bottom wall that overlaps with the air vent hole of the semiconductor substrate.6. The pressure responsive device according to claim 1, wherein the concave is in the range of 5 to 15 &mgr;m in depth.7. The pressure responsive device according to claim 1, wherein the vibrating electrode membrane includes an electret membrane made of a polymer which is electrically charged and an electrode formed on the electret membrane.8. A pressure responsive device comprising: a package including a storage chamber in an interior of the package, the package having a vent hole introducing an outside pressure into the storage chamber; a semiconductor substrate placed in the storage chamber, the semiconductor substrate including a first main surface and a second main surface opposing the first main surface, the first main surface having a concave shape by etching the semiconductor substrate, the first main surface further having a peripheral surface surrounding the concave, the concave having a bottom surface; an over layer formed on the peripheral surface of the first main surface; and a capacitor including a fixed electrode membrane placed on the bottom surface of the concave and a vibrating electrode membrane fixed in contact with an entirety of the over layer completely covering the concave and facing the fixed electrode membrane through a space, the vibrating electrode membrane configured to vibrate according to a variation in the outside pressure into the storage chamber. 9. The pressure responsive device according to claim 8, wherein the peripheral surface is a first flat face positioned on a first plane, and the bottom surface of the concave has a second flat face positioned on a second plane spaced away from and substantially parallel with the first plane.10. The pressure responsive device according to claim 8, further comprising a communication groove running from the concave to an outer edge of the semiconductor substrate formed on the first main surface of the semiconductor substrate.11. The pressure responsive device according to claim 8, wherein the semiconductor substrate is a silicon substrate and the over layer is a silicon oxide layer.12. The pressure responsive device according to claim 8, wherein the over layer is fixed to the peripheral main surface of the first main surface.13. The pressure responsive device according to claim 8, wherein the concave is in the range of 5 to 15 &mgr;m in depth.14. The pressure responsive device according to claim 8, wherein the vibrating electrode membrane includes an electret membrane made of a polymer which is electrically charged and an electrode formed on the electret membrane.
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