초록 ▼

There is provided a system for pumping thermal energy. The system includes (a) a membrane permeator for removing vapor from a process gas and for providing a vapor-depleted process gas, and (b) a gas-liquid contactor for adding vapor from a liquid to a vapor-depleted gas to produce a vapor-added pro

There is provided a system for pumping thermal energy. The system includes (a) a membrane permeator for removing vapor from a process gas and for providing a vapor-depleted process gas, and (b) a gas-liquid contactor for adding vapor from a liquid to a vapor-depleted gas to produce a vapor-added process gas. The system transfers a quantity of thermal energy from the liquid to the vapor-added process gas, and is also capable of upgrading the thermal energy to a higher temperature. The system may be used for various heat pump applications including chilling and waste heat or low level heat recovery.

대표청구항 ▼

There is provided a system for pumping thermal energy. The system includes (a) a membrane permeator for removing vapor from a process gas and for providing a vapor-depleted process gas, and (b) a gas-liquid contactor for adding vapor from a liquid to a vapor-depleted gas to produce a vapor-added pro

There is provided a system for pumping thermal energy. The system includes (a) a membrane permeator for removing vapor from a process gas and for providing a vapor-depleted process gas, and (b) a gas-liquid contactor for adding vapor from a liquid to a vapor-depleted gas to produce a vapor-added process gas. The system transfers a quantity of thermal energy from the liquid to the vapor-added process gas, and is also capable of upgrading the thermal energy to a higher temperature. The system may be used for various heat pump applications including chilling and waste heat or low level heat recovery. e connector coupling the distal end of the first beam to the distal end of the second beam; wherein a potential difference is applied between the two gold conductive layers of the first beam so that current flows into one conductive layer and out the other conductive layer and no potential difference is applied across the second beam. 13. A microelectromechanical structure comprising: a substrate defining a reference plane; and an actuator, the actuator including: a first beam having a proximal end and a distal end, the proximal end of the first beam coupled to the substrate wherein the first beam extends in a first plane parallel with the reference plane, wherein the first beam comprises three layers including a dielectric layer sandwiched between two conductive layers;a second beam having a proximate and a distal end, the proximal end of the second beam coupled to the substrate wherein the second beam extends in the first plane parallel with the reference plane; anda connector coupling the distal end of the first beam to the distal end of the second beam, the connector further including:an actuator electrode located that the distal ends of the first and second beams; anda substrate electrode located on the substrate, wherein when current is applied to the first beam, the actuator bends so that the actuator electrode lies above the substrate electrode; and wherein a first potential difference is applied across the two conductive layers of the first beam so that current flows into one conductive layer and out the other conductive layer and no potential difference is applied across the second beam, and wherein a second potential difference is applied between the substrate and actuator electrodes so that an electrostatic force latches the connector of the actuator to the substrate. 14. A microelectromechanical structure comprising: a substrate defining a reference plane; an actuator having a portion thereof suspended above the reference plane of the substrate, the actuator comprising: a hot arm having a distal region and a proximal region, the hot arm including three layers including a dielectric layer sandwiched between two conductive layers, the hot arm having a first width in the proximal region and a second width in the distal region, the first width being less than the second width;a cold arm having a distal region coupled to the distal region of the hot arm; wherein a potential difference is applied across the hot arm so that a current circulates through the conductive layers of the hot arm to cause the hot arm to expand and move the distal regions of the hot and cold arms towards the contact located on the substrate. 15. The structure of claim 14 wherein the first width is half of the second width.16. The structure of claim 14 wherein the first width is about a quarter of the second width.17. A microelectromechanical structure comprising: a substrate defining a reference plane; an actuator having a portion thereof suspended above the reference plane of the substrate, the actuator comprising: a hot arm having a distal end, the hot arm is made of three layers including a dielectric layer sandwiched between two conductive layers;a cold arm having a distal end which is coupled to the distal end of the hot arm, the cold arm being position in a generally parallel orientation relative to the hot arm; wherein a potential difference is applied across the hot arm so that a current circulates through the conductive layers of the hot arm to cause the hot arm to expand and move the distal ends of the hot and cold arms towards the contact located on the substrate. 18. The structure of claim 17 wherein the cold arm is made of three layers including a dielectric layer sandwiched between two conductive layers.19. The structure of claim 17 further comprising a connector made of a conductive material coupling the distal ends of the hot and cold arms.20. The structure of claim 17 wherein the two conductive layers of the hot arm are formed of a single material.21. The structure of claim 20 wherein the cold arm is formed of polysilicon.22. The structure of claim 17 wherein the hot arm has a first width in a proximal region and a second width in a distal region wherein the first width is less than the second width.23. The structure of claim 22 wherein the first width is half of the second width.24. The structure of claim 22 wherein the first width is about a quarter of the second width.25. A microelectromechanical device comprising: a substrate defining a reference plane; a first beam having a proximal and a distal end, the proximal end of the first beam coupled to the substrate wherein the first beam extends in a plane parallel with the reference plane, the first beam formed by a three layer structure having a dielectric layer sandwiched between two conductive layers; a second beam having a proximal and a distal end, the proximal end of the second beam coupled to the substrate wherein the second beam extends in a plane parallel with the reference plane, the second beam formed by a three layer structure having a dielectric layer sandwiched between two conductive layers; a connector coupling the distal end of the first beam to the distal end of the second beam; wherein a first potential difference selectively applied across the first beam and no potential difference applied across the second beam, causes greater thermal expansion in the first beam resulting in deflection of the distal ends of the first and second beams in a first direction; and wherein a second potential difference selectively applied across the second beam and no potential difference applied across the first beam causes greater thermal expansion in the second beam resulting in deflection of the distal ends of the first and second beams in a second opposite direction. 26. The device of claim 25 wherein the first and second beams are positioned in a neutral position when no potential difference is applied across either one of the first and second beams, and selective application of one of the first and second potential differences to the respective first and second beams results in deflection of the distal ends of the first and second beams from the neutral position to the respective first and second directions.