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There is described an organic thin-film transistor fabricated on a substrate. The organic thin-film transistor includes a first insulating layer formed on the substrate; an organic semiconductor layer formed on the first insulating layer; a second insulating layer formed on the organic semiconductor

There is described an organic thin-film transistor fabricated on a substrate. The organic thin-film transistor includes a first insulating layer formed on the substrate; an organic semiconductor layer formed on the first insulating layer; a second insulating layer formed on the organic semiconductor layer; a first through-hole bored through the second insulating layer; a second through-hole bored through the second insulating layer; a source electrode embedded in the first through-hole, a depth of which is equal to or greater than a thickness of the second insulating layer so that the source electrode contacts the organic semiconductor layer; a drain electrode embedded in the second through-hole, a depth of which is equal to or greater than a thickness of the second insulating layer so that the drain electrode contacts the organic semiconductor layer; and a gate electrode embedded in the first insulating layer.

대표청구항 ▼

1. An organic thin-film transistor fabricated on a substrate, comprising: a first insulating layer formed on said substrate; an organic semiconductor layer formed on said first insulating layer; a second insulating layer formed on said organic semiconductor layer; a first through-hole bor

1. An organic thin-film transistor fabricated on a substrate, comprising: a first insulating layer formed on said substrate; an organic semiconductor layer formed on said first insulating layer; a second insulating layer formed on said organic semiconductor layer; a first through-hole bored through said second insulating layer; a second through-hole bored through said second insulating layer; a source electrode embedded in said first through-hole, a depth of which is equal to or greater than a thickness of said second insulating layer so that said source electrode contacts said organic semiconductor layer; and a drain electrode embedded in said second through-hole, a depth of which is equal to or greater than a thickness of said second insulating layer so that said drain electrode contacts said organic semiconductor layer. 2. The organic thin-film transistor of claim 1, further comprising: a gate electrode embedded in said first insulating layer. 3. The organic thin-film transistor of claim 1, wherein said second insulating layer is made of a photosensitive material. 4. The organic thin-film transistor of claim 1, wherein said second insulating layer is a coating film formed by applying a solvent, which includes a water as a main ingredient.