Creased armature winding insulator for dynamo-electric machine
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H02K-003/34
H02K-001/00
H02K-017/00
H02K-019/00
H02K-021/00
출원번호
US-0780480
(2001-02-12)
우선권정보
JP-0234159 (2000-08-02)
발명자
/ 주소
Senoo, Akira
Oketani, Naohiro
Takizawa, Takusi
Oohashi, Atsushi
출원인 / 주소
Mitsubishi Denki Kabushiki Kaisha
대리인 / 주소
Sughrue Mion, PLLC
인용정보
피인용 횟수 :
10인용 특허 :
18
초록▼
A method includes the steps of forming a substantially U-shaped insulator having outwardly bent portions formed by bending the side portions thereof at bent parts so as to be apart from each other, forming winding assemblies including strands of wire wound in a predetermined wound state, mounting th
A method includes the steps of forming a substantially U-shaped insulator having outwardly bent portions formed by bending the side portions thereof at bent parts so as to be apart from each other, forming winding assemblies including strands of wire wound in a predetermined wound state, mounting the insulator in each slot in a manner such that the outwardly bent portions of the insulator protrude from an opening of the slot, and inserting the winding assemblies in each insulator from an open side of the slot by being guided by the outwardly bent portions and pushing the winding assemblies together with the insulator into each slot.
대표청구항▼
A method includes the steps of forming a substantially U-shaped insulator having outwardly bent portions formed by bending the side portions thereof at bent parts so as to be apart from each other, forming winding assemblies including strands of wire wound in a predetermined wound state, mounting th
A method includes the steps of forming a substantially U-shaped insulator having outwardly bent portions formed by bending the side portions thereof at bent parts so as to be apart from each other, forming winding assemblies including strands of wire wound in a predetermined wound state, mounting the insulator in each slot in a manner such that the outwardly bent portions of the insulator protrude from an opening of the slot, and inserting the winding assemblies in each insulator from an open side of the slot by being guided by the outwardly bent portions and pushing the winding assemblies together with the insulator into each slot. he composite structure of claim 1 further comprising a second metal pad structure below said first via pad structure, said second metal pad structure comprising a plurality of segments of a second interconnect metal and a second plurality of dielectric fillers, at least one of said plurality of segments of said second interconnect metal contacting said first via metal.7. The composite structure of claim 6 wherein said second interconnect metal is selected from the group consisting of copper and aluminum.8. The composite structure of claim 1 wherein said first plurality of dielectric fillers comprise a low-k dielectric.9. The composite structure of claim 8 wherein said low-k dielectric is selected from the group consisting of porous silica, fluorinated amorphous carbon, fluoro-polymer, parylene, polyarylene ether, silsesquioxane, fluorinated silicon dioxide, and diamondlike carbon.10. The composite structure of claim 6 wherein said second plurality of dielectric fillers comprise a low-k dielectric.11. The composite structure of claim 10 wherein said low-k dielectric is selected from the group consisting of porous silica, fluorinated amorphous carbon, fluoro-polymer, parylene, polyarylene ether, silsesquioxane, fluorinated silicon dioxide, and diamondlike carbon.12. The composite structure of claim 1 wherein said first metal pad structure is a bonding pad.13. A method for fabricating a composite structure in an IC chip, said method comprising steps of: fabricating a first via pad structure, said first via pad structure comprising a plurality of segments of a first via metal and a first plurality of dielectric fillers, each of said first plurality of dielectric fillers being situated between two of said plurality of segments of said first via metal, at least two of said plurality of segments of said first via metal being connected; fabricating a first metal pad structure above said first via pad structure, said first metal pad structure comprising a plurality of segments of a first interconnect metal, at least one of said plurality of segments of said first interconnect metal extending along at least one side of said first metal pad structure, said at least one of said plurality of segments of said first interconnect metal being in contact with at least one of said plurality of segments of said first via metal. 14. The method of claim 13 wherein said first metal pad structure is a bonding pad.15. The method of claim 13 wherein said first interconnect metal is selected from the group consisting of copper and aluminum.16. The method of claim 13 wherein said first via metal is selected from the group consisting of copper and tungsten.17. The method of claim 13 wherein said first plurality of dielectric fillers comprise a low-k dielectric.18. The method of claim 17 wherein said low-k dielectric is selected from the group consisting of porous silica, fluorinated amorphous carbon, fluoro-polymer, parylene, polyarylene ether, silsesquioxane, fluorinated silicon dioxide, and diamondlike carbon.19. A composite structure in an IC chip, said composite structure comprising: a first via-pad structure comprising a plurality of segments of a first via metal, at least one of said plurality of segments of said first via metal extending along at least one side of said first via pad structure; a first metal pad structure below said first via pad structure, said first metal pad structure comprising a plurality of segments of a first interconnect metal and a first plurality of dielectric fillers, each of said first plurality of dielectric fillers being situated between two of said plurality of segments of said first interconnect metal, at least one of said plurality of segments of said first interconnect metal being in contact with said at least one of said plurality of segments of said first via metal, at least two of said plurality of segments of said first interconnect metal being connected. 20. The composite structure of claim 19 wher
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이 특허에 인용된 특허 (18)
Honshima Teruhisa (Naka JPX) Watanabe Yasuaki (Katsuta JPX) Takahachi Akira (Naka JPX) Samata Tadayochi (Katsuta JPX) Tohkairin Akira (Katsuta JPX) Ogasawara Nobuhiko (Mito JPX), Armature for an electric rotary machine and method of manufacturing the same.
Ebihara, Jiro; Takiguchi, Masayuki, Rotor production method including assembling a slot insulator and coil trunk into a set prior to insertion into an armature core.
Katahira Koji,JPX ; Ono Yasuhiro,JPX ; Gotoh Tatsuo,JPX ; Okada Norimasa,JPX ; Ebihara Jiro,JPX ; Takiguchi Masayuki,JPX, Rotor production method including assembling a slot insulator and coil trunk into a set prior to insertion into an armature core.
Alan G. Jack GB; Barrie Mecrow GB; John Terence Evans GB; James Stonehouse Burdess GB; John Neville Fawcett GB; Dawn Stephenson GB; Phillip George Dickinson GB, Stator with teeth formed from a soft magnetic powder material.
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