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A vacuum plasma processor includes an electrode array with plural mutually-insulated electrodes forming a bottom or top electrode of the plasma processor. When the electrode array is part of the bottom electrode, the electrodes of the array are parts of a thermoelectric, Peltier effect arrangement r

A vacuum plasma processor includes an electrode array with plural mutually-insulated electrodes forming a bottom or top electrode of the plasma processor. When the electrode array is part of the bottom electrode, the electrodes of the array are parts of a thermoelectric, Peltier effect arrangement responsive to localized temperature sensors and are parts of an electrostatic chuck. The thermoelectric arrangement controls localized temperature of workpieces and the chucking voltages indicate workpiece position relative to a workpiece holder including the electrodes. The electrodes of the arrays are coupled to circuitry for determining and/or controlling at least one localized plasma electric parameter at different locations of a workpiece and/or the plasma. The circuitry simultaneously supplies RF power having differing frequencies and/or power levels to different electrodes of the arrays and includes separate matching networks connected to the different electrodes of the array.

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1. A vacuum plasma processor for processing a workpiece comprising a vacuum chamber having a gas inlet port, a vacuum port, a workpiece holder, a reactance for exciting gas in the chamber to an AC plasma, and a controller arrangement for controlling temperature properties of different localized port

1. A vacuum plasma processor for processing a workpiece comprising a vacuum chamber having a gas inlet port, a vacuum port, a workpiece holder, a reactance for exciting gas in the chamber to an AC plasma, and a controller arrangement for controlling temperature properties of different localized portions of a workpiece on the holder, the controller arrangement including a temperature sensor for different localized portions of the workpiece on the holder, the controller including a plurality of thermoelectric devices associated with the different localized portions of the workpiece on the holder, each thermoelectric device including a pair of first and second semiconductor structures, a DC voltage source connected between the first and second semiconductor structures; the electrodes, semiconductor structures and DC voltage source being arranged to cause the first structure to supply heat to the first segment for a first polarity of the voltage and the second structure to remove heat from the second segment for a second polarity of the voltage. 2. A vacuum plasma processor for processing a workpiece comprising a vacuum chamber having a gas inlet port, a vacuum port, a workpiece holder, a reactance for exciting gas in the chamber to plasma, an array of mutually electrically insulated rectangular electrodes for supplying electric fields to the plasma, an AC source arrangement, the electrodes being arranged in a pair of stripes extending at right angles to each other, the stripes intersecting at a region aligned with the center of the workpiece holder, and circuitry for causing differential power to be applied by the AC source arrangement to separate electrodes of the array. 3. The vacuum plasma processor of claim 2 wherein the stripes are included in a matrix of rows and columns.4. The vacuum plasma processor of claim 3 wherein the workpiece, when processed, includes plural dies, the electrodes being arranged to be aligned with the plural dies of the workpiece when the workpiece is properly positioned on the workpiece holder.