IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
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| 국제특허분류(IPC7판) |
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| 출원번호 |
US-0294233
(2002-11-13)
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발명자
/ 주소 |
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| 출원인 / 주소 |
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| 대리인 / 주소 |
Knobbe Martens Olson & Bear LLP
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| 인용정보 |
피인용 횟수 :
114 인용 특허 :
43 |
초록
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Silicon alloys and doped silicon films are prepared by chemical vapor deposition and ion implantation processes using Si-containing chemical precursors as sources for Group III and Group V atoms. Preferred dopant precursors include (H3Si)3-xMRx, (H3Si)3N, and (H3Si)4N2, wherein R is H or D, x=0, 1 o
Silicon alloys and doped silicon films are prepared by chemical vapor deposition and ion implantation processes using Si-containing chemical precursors as sources for Group III and Group V atoms. Preferred dopant precursors include (H3Si)3-xMRx, (H3Si)3N, and (H3Si)4N2, wherein R is H or D, x=0, 1 or 2, and M is selected from the group consisting of B, P, As, and Sb. Preferred deposition methods produce non-hydrogenated silicon alloy and doped Si-containing films, including crystalline films.
대표청구항
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1. A deposition process for making a non-hydrogenated Si-containing film, comprising: providing a vapor deposition chamber having a substrate disposed therein; introducing a dopant precursor compound to the chamber, wherein the dopant precursor compound comprises at least one silicon atom and a
1. A deposition process for making a non-hydrogenated Si-containing film, comprising: providing a vapor deposition chamber having a substrate disposed therein; introducing a dopant precursor compound to the chamber, wherein the dopant precursor compound comprises at least one silicon atom and at least one Group III or Group V atom; and depositing a non-hydrogenated Si-containing film onto the substrate. 2. The process of claim 1, wherein the dopant precursor compound has the form (H3Si)3-xMRx, and wherein R is H or D, x=0, 1 or 2, and M is selected from the group consisting of B, Al, Ga, In, P, As, and Sb.3. The process of claim 2, further comprising introducing a silicon source to the chamber.4. The process of claim 3, wherein the silicon source is selected from the group consisting of silane, disilane and trisilane.5. The process of claim 2, wherein M is selected from the group consisting of P, As, and Sb.6. The process of claim 5, wherein the Si-containing film is an alloy comprising an amount of silicon in the range of about 50 atomic % to about 99.9 atomic %.7. The process of claim 5, wherein the Si-containing film comprises an amount of arsenic or phosphorous in the range of about 1 part per billion to about 1,000 parts per million.8. The process of claim 2, wherein the Si-containing film is a crystalline film.9. The process of claim 8, wherein the Si-containing film is an epitaxial film.10. The process of claim 2, wherein the Si-containing film is a solid diffusion source.11. The process of claim 1, wherein the Si-containing film is deposited by thermal chemical vapor deposition.12. The process of claim 11, wherein the dopant precursor compound is (H3Si)3N.13. The process of claim 12, further comprising introducing a carbon source and a silicon source to the chamber to thereby deposit a nitrogen-doped SiC film as the non-hydrogenated Si-containing film.14. The process of claim 11, wherein the dopant precursor compound is (H3Si)2N2.15. The process of claim 1, further comprising introducing an oxygen-containing pulse to the chamber, wherein the dopant precursor compound is tetrasilylhydrazine, and wherein the non-hydrogenated Si-containing film is deposited by atomic layer deposition.16. The process of claim 1, wherein the Si-containing film is deposited by plasma-enhanced chemical vapor deposition.17. The process of claim 1, wherein the Si-containing film is deposited at a temperature of about 400° C. or greater.18. The process of claim 1, wherein the Si-containing film is deposited at a temperature in the range of about 450° C. to about 700° C.19. The process of claim 1, wherein the Si-containing film contains about 5 atomic % hydrogen or less.20. The process of claim 1, wherein the Si-containing film contains about 2 atomic % hydrogen or less.21. The process of claim 1, further comprising introducing an oxygen-containing pulse to the chamber, wherein the dopant precursor compound is trisilylamine, and wherein the non-hydrogenated Si-containing film is deposited by atomic layer deposition.22. The process of claim 1, further comprising introducing a germanium source to the chamber.23. The process of claim 1, wherein the Si-containing film comprises a material selected from the group consisting of doped amorphous silicon, doped polysilicon, doped epitaxial silicon, doped SiC, doped SiGe, and doped SiGeC.24. A chemical vapor deposition process for making an at least partially crystalline Si-containing film, comprising providing a chemical vapor deposition chamber having a substrate disposed therein: introducing a silicon source and a dopant precursor compound to the chamber, wherein the dopant precursor compound is comprised of at least one silicon atom and at least one Group III or Group V atom; and(depositing a doped Si-containing film onto the substrate.25. The process of claim 24, wherein the substrate is maintained at a temperature between about 550° C. and about 700° C. and the film is at least parti ally crystalline as deposited.26. The process of claim 24, wherein the silicon source is selected from the group consisting of silane, disilane and trisilane.27. The process of claim 26, wherein the dopant precursor compound has the form (H3Si)3-xMRx, and wherein R is H or D, x=0, 1 or 2, and M is selected from the group consisting of B, Al, Ga, In, P, As, and Sb.28. The process of claim 27, wherein the doped Si-containing film comprises an amount of arsenic or phosphorous in the range of about 1 part per billion to about 1,000 parts per million.29. The process of claim 24, further comprising introducing a carbon source to the chamber to thereby deposit a nitrogen-doped SiC film as the doped Si-containing film.30. The process of claim 29, wherein the dopant precursor compound is a nitrogen-containing chemical precursor compound that is free of N—H bonds.31. The process of claim 30, wherein the chemical vapor deposition chamber is a single-wafer, horizontal gas flow reactor.32. The process of claim 24, wherein the doped Si-containing film is a single crystal.33. The process of claim 24, further comprising introducing a germanium source to the chamber.34. The process of claim 24, wherein the doped Si-containing film is amorphous as deposited, further comprising: heating the doped amorphous Si-containing film to a temperature in the range of about 550° C. to about 700° C. for a period of time effective to at least partially crystallize the doped amorphous Si-containing film. 35. The process of claim 34, wherein the doped amorphous Si-containing film is deposited by plasma-enhanced chemical vapor deposition.36. The process of claim 34, wherein the doped amorphous Si-containing film is non-hydrogenated.37. The process of claim 34, wherein the dopant precursor compound has the form (H3Si)3-xMRx, and wherein R is H or D, x=0, 1 or 2, and M is selected from the group consisting of B, Al, Ga, In, P, As, and Sb.38. The process of claim 37, wherein the silicon source is selected from the group consisting of silane, disilane and trisilane.39. The process of claim 37, wherein the doped Si-containing film comprises an amount of arsenic or phosphorous in the range of about 1 part per billion to about 1,000 parts per million.40. The process of claim 34, wherein the period of time for the heating of the doped Si-containing film is in the range of about 2 minutes to about 1 hour.
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