초록 ▼

A multijunction solar cell comprising a silicon solar cell with a germanium solar cell formed on the backside of the silicon solar cell. The silicon solar cell and germanium solar cell are directly coupled via a p-p junction to inactivate interface dislocations. Preferably, the silicon solar cell co

A multijunction solar cell comprising a silicon solar cell with a germanium solar cell formed on the backside of the silicon solar cell. The silicon solar cell and germanium solar cell are directly coupled via a p-p junction to inactivate interface dislocations. Preferably, the silicon solar cell comprises a p++ type silicon layer; an intrinsic silicon layer formed on the p++ type silicon layer; an n++ type silicon layer formed on the intrinsic type silicon layer; and a p-type silicon layer formed on the n++ type silicon layer. The germanium solar cell preferably comprises an n-type germanium layer; and a p-type germanium layer form on the n-type germanium layer. The p-type germanium layer is coupled to the p++ type silicon layer.

대표청구항 ▼

1. A multijunction solar cell comprising: a silicon solar cell comprising: a p++ type silicon layer;an intrinsic silicon layer formed on the p++ type silicon layer;an n++ type silicon layer formed on the intrinsic type silicon layer; anda p-type silicon layer formed on the n++ type silicon layer;

1. A multijunction solar cell comprising: a silicon solar cell comprising: a p++ type silicon layer;an intrinsic silicon layer formed on the p++ type silicon layer;an n++ type silicon layer formed on the intrinsic type silicon layer; anda p-type silicon layer formed on the n++ type silicon layer; a germanium solar cell comprising: an n-type germanium layer; anda p-type germanium layer form on the n-type germanium layer; and wherein the p-type germanium layer is coupled to the p++ type silicon layer to inactivate interface dislocations. 2. A multijunction solar cell comprising: a silicon solar cell comprising a non-light receiving end comprising a p++ type silicon layer, an intrinsic silicon layer formed on the p++ type silicon layer, an n++ type silicon layer formed on the intrinsic type silicon layer, and a p-type silicon layer formed on the n++ type silicon layer; and a germanium solar cell having a light receiving end comprising a p-type germanium layer; wherein the non-light receiving end comprising a p++ type silicon layer is directly coupled to the light receiving end comprising a p-type germanium layer. 3. The multijunction solar cell as per claim 2, wherein the germanium solar cell further comprises: an n-type germanium layer; and a p-type germanium layer formed on the n-type germanium layer. 4. The solar cell as per claim 3, wherein a surface of the n-type germanium layer is passivated by an n-type silicon layer.5. The solar cell as per claim 2, further comprising: a germanium-tin solar cell formed on the non light receiving end of the germanium solar cell. 6. A method of forming a multijunction solar cell, the method comprising: forming a silicon solar cell comprising: a p++ type silicon layer;an intrinsic silicon layer formed on the p++ type silicon layer;an n++ type silicon layer formed on the intrinsic type silicon layer;a p-type silicon layer formed on the n++ type silicon layer; forming a germanium solar cell comprising: an n-type germanium layer;a p-type germanium layer form on the n-type germanium layer; and wherein the p-type germanium layer is coupled to the p++ type silicon layer. 7. The method as per claim 6 further comprising: forming a germanium-tin solar cell having a light receiving end coupled to the n-type layer of the germanium solar cell.