Photonic signal frequency up and down-conversion using a photonic band gap structure
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G02F-002/02
G02F-001/39
출원번호
US-0742295
(2000-12-22)
발명자
/ 주소
Scalora, Michael
Bloemer, Mark J.
Centini, Marco
D'Aguanno, Giuseppe
대리인 / 주소
Finn, James S.
인용정보
피인용 횟수 :
23인용 특허 :
72
초록▼
A photonic band gap (PBG) device is provided for frequency up and/or down-converting first and second photonic signals incident on the device to produce a down-converted output photonic signal. When the first and second incident photonic signals have respective first and second frequencies &ohgr;3an
A photonic band gap (PBG) device is provided for frequency up and/or down-converting first and second photonic signals incident on the device to produce a down-converted output photonic signal. When the first and second incident photonic signals have respective first and second frequencies &ohgr;3and &ohgr;2, the down-converted photonic signal has a third frequency &ohgr;1=&ohgr;3−&ohgr;2. When the first incident field has a frequency &ohgr;1, the first up-converted photonic signal has a second frequency &ohgr;2. The second up-converted photonic signal has a third frequency &ohgr;3=&ohgr;1+&ohgr;2. Thus, the PBG device can be used to generate coherent near- and mid-IR signals by frequency down-converting photonic signals from readily available photonic signal sources, or red, blue, and ultraviolet signals by up-converting the same readily available photonic signal sources.
대표청구항▼
1. A device for frequency down-converting a photonic signal incident upon the device, comprising: a plurality of first material layers; and a plurality of second material layers, the first and second material layers being adapted to receive first and second photonic signals incident upon the
1. A device for frequency down-converting a photonic signal incident upon the device, comprising: a plurality of first material layers; and a plurality of second material layers, the first and second material layers being adapted to receive first and second photonic signals incident upon the device and having respective first and second frequencies, the first and second material layers being arranged such that the device exhibits a photonic band gap structure, wherein the photonic band gap structure exhibits first and second transmission band edges respectively corresponding to the first and second frequencies, and wherein an interaction of the first and second photonic signals with the arrangement of layers causes a mixing process to generate a third photonic signal having a third frequency that is less than the first and second frequencies. 2. The device of claim 1, wherein said first and second material layers are arranged in a periodically alternating manner such that the arrangement formed therefrom exhibits said photonic band gap structure.3. The device of claim 1, wherein said first material layer has a first index of refraction and said second material layer has a second index of refraction, said first index of refraction and said second index of refraction being different.4. The device of claim 1, wherein said first material layer has a first thickness and said second material layer has a second thickness, said first thickness and said second thickness being different.5. The device of claim 1, wherein said photonic band gap structure also exhibits a set of transmission resonances near the third order band gap, and wherein said third frequency is tuned such that phase matching conditions are satisfied to enhance the generation of the third frequency.6. The device of claim 1, wherein each of said first and second input photonic signals is one of 1) a continuous wave photonic signal generated by a continuous wave laser source, and 2) a pulsed photonic signal generated by a pulsed laser source.7. The device of claim 1, wherein said arrangement of layers forms a mixed half-eighth wave structure.8. The device according to claim 1, wherein said first and second material layers respectively comprise GaAs and AlAs semiconductor layers, said first and second layers being formed on an appropriate substrate.9. The device according to claim 1, wherein said first and second material layers respectively comprise AlN and SiO2layers, said first and second layers being formed on a appropriate substrate.10. The device of claim 1, wherein a length of the device is between 300 hundred nanometers and 300 thousand microns.11. A method of frequency down-converting a photonic signal incident on a device, the device including a plurality of first material layers and a plurality of second material layers, the first and second material layers being arranged such that the device exhibits a photonic band gap structure, wherein the photonic band gap structure exhibits first and second transmission band edges, the method comprising the steps of: applying first and second photonic signals to the first and second material layers, the first and second photonic signals having respective first and second frequencies corresponding to the first and second transmission band edges, wherein an interaction of the first and second photonic signals with the arrangement of layers causes a mixing process to generate a third photonic signal having a third frequency that is less than the first and second frequencies. 12. The method of claim 11, further comprising the step of mixing the first and second frequencies such that the third frequency is the difference between the first and second frequencies.13. The method of claim 12, wherein the mixing step generates the third frequency such that the third frequency is tuned to a third transmission resonance associated with a third band gap edge.14. The method of claim 11, wherein a number of input beams may be injected to a plurality of first and second layers, such that phase matching conditions are satisfied.15. A device for frequency up-converting a photonic signal incident upon the device, comprising: a plurality of first material layers; and a plurality of second material layers, the first and second material layers being adapted to receive a first photonic signal incident upon the device and having a first frequency, the first and second material layers being arranged such that the device exhibits a photonic band gap structure, wherein the photonic band gap structure exhibits first and second transmission band edges respectively corresponding to a first and a second frequency, and wherein an interaction of the first photonic signal may generate a second photonic signal with a frequency near the second band edge, and such that the arrangement of layers causes a further mixing process to generate a third photonic signal having a third frequency that is more than the first and second frequencies. 16. The device of claim 15, wherein said first and second material layers are arranged in a periodically alternating manner such that the arrangement formed therefrom exhibits said photonic band gap structure.17. The device of claim 15, wherein said first material layer has a first index of refraction and said second material layer has a second index of refraction, said first index of refraction and said second index of refraction being different from one another.18. The device of claim 15, wherein said first material layer has a first thickness and said second material layer has a second thickness, said first thickness and said second thickness being different from one another.19. The device of claim 15, wherein said photonic band gap structure also exhibits a third transmission resonance at a third order band gap, and wherein said third frequency is tuned to said third transmission resonance.20. The device of claim 15, wherein the input photonic signal is one of 1) a continuous wave photonic signal generated by a continuous wave laser source, and 2) a pulsed photonic signal generated by a pulsed laser source.21. The device of claim 15, wherein said arrangement of layers forms a mixed half-eighth wave multilayer stack, and said second frequency is a second harmonic of the input photonic signal frequency, and said third photonic signal is a third harmonic of the input photonic signal frequency.22. A method of frequency up-converting a photonic signal incident on a device, the device including a plurality of first material layers and a plurality of second material layers, the first and second material layers being arranged such that the device exhibits a photonic band gap structure, wherein the photonic band gap structure exhibits first and second transmission band edges, the method comprising the steps of: applying a first photonic signal to the first and second material layers, generating a second photonic signal having a second frequency corresponding to the second transmission band edge, wherein a subsequent interaction of the first and second photonic signal with the arrangement of layers causes a mixing process to generate a third photonic signal having a third frequency that is more than the first and second frequencies. 23. The method of claim 22, wherein a first and second photonic signal are injected inside the plurality of layers.24. The method of claim 22, further comprising the step of mixing the first and second frequencies such that the third frequency is the sum of the first and second frequencies.25. The method of claim 24, wherein the mixing step generates the third frequency such that the third frequency is tuned to a third transmission resonance associated with a third band gap edge.26. The method of claim 22, wherein a number of input beams may be injected to a plurality of first and second layers, such that phase matching conditions are satisfied.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (72)
Crenshaw Michael E. (Madison AL) Scalora Michael (Huntsville AL) Bowden Charles M. (Huntsville AL), All-optical switch utilizing inversion of two-level systems.
Hood Thomas G. (San Francisco CA) Meyer Stephen F. (Los Altos CA) Brazil Michael (Union City CA), Color-corrected heat-reflecting composite films and glazing products containing the same.
Hartig Klaus W. (Brighton MI) Larson Steven L. (Monroe MI) Lingle Philip J. (Temperance MI), Dual silver layer Low-E glass coating system and insulating glass units made therefrom.
Wolfe Jesse D. (San Ramon CA) Belkind Abraham I. (North Plainfield NJ) Laird Ronald E. (Benecia CA), Durable low-emissivity solar control thin film coating.
Schrenk Walter J. (Midland MI) Arends Charles B. (Midland MI) Balazs Conrad F. (Midland MI) Lewis Ray A. (Midland MI) Wheatley John A. (Midland MI), Formable reflective multilayer body.
Chemla Daniel S. (Rumson NJ) Damen Theodoor C. (Colts Neck NJ) Gossard Arthur C. (Warren NJ) Miller David A. B. (Lincroft NJ) Wood Thomas H. (Highlands NJ), High speed light modulator using multiple quantum well structures.
Hartig Klaus W. (Brighton MI) Larson Steven L. (Monroe MI) Lingle Philip J. (Temperance MI), Low-E glass coating system and insulating glass units made therefrom.
Brommer Karl (Hampton Falls NH) Mullaney Henry (Amherst NH) Meade Robert (Winchester MA) Rappe Andrew (Emeryville CA) Joannopoulos John (Belmont MA), Low-loss dielectric resonant devices having lattice structures with elongated resonant defects.
Brommer Karl (Box 53 Hampton Falls NH 03844) Mullaney Henry (271 Chestnut Hill Rd. Amherst NH 03031) Meade Robert (54 Berkeley St. Somerville MA 02143) Rappe Andrew (5133 Briarwood Dr. Macungie PA 18, Low-loss dielectric resonator having a lattice structure with a resonant defect.
Lyons Donald R. (100 Richmond Run Yorktown VA 23693) Ndlela Zolili U. (8528 Annette Engle Way Fair Oaks CA 95628), Methods of and apparatus for calibrating precisely spaced multiple transverse holographic gratings in optical fibers.
Fork Richard Lynn ; Jones Darryl Keith ; Keys Andrew Scott, Microresonator and associated method for producing and controlling photonic signals with a photonic bandgap delay apparatus.
Donald Dominic Arnone GB; Andrew James Shields GB; Richard Andrew Hogg GB; Craig Michael Ciesla GB; David Mark Whittaker GB; Edmund Harold Linfield GB; Alexander Giles Davies GB, Optical device and imaging system.
Rancourt James D. (Santa Rosa CA) Matteucci John S. (Healdsburg CA) Andreasen Michael W. (Calistoga CA), Optical filter assembly for enhancement of image contrast and glare reduction of cathode ray display tube.
Levi Anthony F. J. (Summit NJ) McCall Samuel L. (Chatham NJ) Slusher Richart E. (Lebanon NJ), Optical integrated circuit designed to operate by use of photons.
Scalora Michael ; Dowling Jonathan P. ; Bowden Charles M. ; Bloemer Mark J. ; Tocci Michael D., Optical switch that utilizes one-dimensional, nonlinear, multilayer dielectric stacks.
Ozbay Ekmel (Ames IA) Tuttle Gary (Ames IA) Michel Erick (Ames IA) Ho Kai-Ming (Ames IA) Biswas Rana (Ames IA) Chan Che-Ting (Ames IA) Soukoulis Costas (Ames IA), Periodic dielectric structure for production of photonic band gap and method for fabricating the same.
Scalora Michael (Huntsville AL) Dowling Jonathan P. (Huntsville AL) Bowden Charles M. (Huntsville AL) Bloemer Mark J. (Athens AL), Photonic band edge optical diode.
Scalora Michael ; Bloemer Mark J. ; Tocci Michael D., Photonic band gap device and method using a periodicity defect region to increase photonic signal delay.
Dowling Jonathan P. ; Scalora Michael ; Bloemer Mark J. ; Bowden Charles M. ; Flynn Rachel J. ; Fork Richard L. ; Reinhardt ; Jr. Senter B. ; Tocci Michael D., Photonic bandgap apparatus and method for delaying photonic signals.
Alfano Robert R. (3777 Independence Ave. Bronx NY 10463) Yoo Kwong M. (412 W. 148th St. ; Apt. 2G New York NY 10031), Protective device for selectively reflecting high-intensity light over a broad spectral bandwidth.
Gajewski Kenneth J. (Woodhaven MI) Hymore Ronald R. (Oregon OH) Nietering Kenneth E. (Dearborn MI), Solar load reduction panel with controllable light transparency.
Fan Shanhui (Cambridge MA) Villeneuve Pierre R. (Arlington MA) Meade Robert D. (Morris Township NJ) Joannopoulos John D. (Belmont MA), Three-dimensional periodic dielectric structures having photonic bandgaps.
Pai Purnachandra (Birmingham MI) Im Jun S. (Detroit MI) Piner John (Lincoln Park MI), Transparency having a second surface multilayer decorative coating.
Lu Samuel (Agoura CA) Sun Ming-Jau (Woodland Hills CA) Stewart Alan F. (Thousand Oaks CA) Louderback Anthony W. (Eugene OR), Ultraviolet resistive antireflective coating of Ta2O5doped with Al2O3
상세보기
Lu Samuel (Agoura CA) Sun Ming-Jau (Woodland Hills CA) Stewart Alan F. (Thousand Oaks CA) Louderback Anthony W. (Eugene OR), Ultraviolet resistive coated mirror and method of fabrication.
Barker, Delmar L.; Owens, William R., Heat transfer devices based on thermodynamic cycling of a photonic crystal with coupled resonant defect cavities.
Barker, Delmar L.; Owens, William R.; Kano, Patrick O., Photonic crystal resonant defect cavities with nano-scale oscillators for generation of terahertz or infrared radiation.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.