초록 ▼

A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to a organic or organometallic molecule such that upon exposure to heat such bond is readily cleavable, e.g., copper deposition process involving the formation of films on

A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to a organic or organometallic molecule such that upon exposure to heat such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent.

대표청구항 ▼

1. An apparatus for abatement of effluent from a CVD process using an organometallic copper source reagent, said apparatus comprising: a sorbent bed comprising sorbent material having sorptive affinity for the organometallic copper source reagent and decomposition byproducts thereof; and a flow

1. An apparatus for abatement of effluent from a CVD process using an organometallic copper source reagent, said apparatus comprising: a sorbent bed comprising sorbent material having sorptive affinity for the organometallic copper source reagent and decomposition byproducts thereof; and a flow path joining the sorbent bed in gas flow communication with the process, so that effluent is flowed through the gas flow path to the sorbent bed for at least partial removal of residual copper source reagent and decomposition products from the effluent; and a pump in the flow path. 2. The apparatus of claim 1, wherein said pump provides a subatmospheric pressure level.3. An apparatus for abatement of effluent from a CVD process using an organometallic copper source reagent, said apparatus comprising: a sorbent bed comprising sorbent material having sorptive affinity for the organometallic copper source reagent and decomposition byproducts thereof; and a flow path joining the sorbent bed in gas flow communication with the process, so that effluent is flowed through the gas flow path to the sorbent bed for at least partial removal of residual copper source reagent and decomposition products from the effluent; and an endpoint detector arranged to detect breakthrough of an effluent component from said sorbent bed. 4. An apparatus for abatement of effluent from a CVD process for depositing copper on a substrate from a Cu(hfac)TMVS source reagent, said apparatus comprising: a sorbent bed having sorptive affinity for Cu(hfac)TMVS, Cu(hfac) 2and TMVS; a flow path joining the sorbent bed in gas flow communication with the process, so that effluent from the CVD process passes through said sorbent bed, to remove residual Cu(hfac)TMVS, Cu(hfac) 2and TMVS from the effluent; and a pump in said flow path. 5. The apparatus of claim 4, wherein said pump provides a subatmospheric pressure level.6. The apparatus of claim 4, further comprising means for regenerating the sorbent bed.7. An apparatus for abatement of effluent from a CVD process for depositing copper on a substrate from a Cu(hfac)TMVS source reagent, said apparatus comprising: a sorbent bed having sorptive affinity for Cu(hfac)TMVS, Cu(hfac) 2and TMVS; a flow path joining the sorbent bed in gas flow communication with the process, so that effluent from the CVD process flows through said sorbent bed, to remove residual Cu(hfac)TMVS, Cu(hfac) 2and TMVS from the effluent; and means for detecting the endpoint of sorption in the sorbent bed. 8. The apparatus of claim 7, wherein said means for detecting the endpoint of sorption in the sorbent bed, comprise a quartz microbalance detector.9. The apparatus of claim 4, further including a semiconductor manufacturing facility whose operation comprises said CVD process.10. An apparatus comprising: a semiconductor manufacturing facility arranged to deposit copper on a substrate from an organocopper reagent, said facility including an organocopper reagent source and a CVD reactor coupled therewith, wherein said CVD reactor produces an effluent including residual organocopper reagent and decomposition byproducts of the organocopper reagent; a sorbent bed comprising sorbent material having sorptive affinity for the residual organocopper reagent and decomposition byproducts thereof; and a flow path joining the sorbent bed in gas flow communication with the CVD reactor, so that effluent is flowed through the gas flow path to the sorbent bed for at least partial removal of the residual organocopper reagent and decomposition byproducts from the effluent. 11. The apparatus of claim 10, further comprising a pump in the flow path.12. The apparatus of claim 11, wherein the pump provides a subatmospheric pressure level.13. The apparatus of claim 11, further comprising thermal means selected from the group consisting of (i) a heated flow path portion upstream of said pump, and (ii) a cold trap downstream of the pump.14. The appa ratus of claim 10, further comprising means for detecting the endpoint of sorption in the sorbent bed.15. The apparatus of claim 10, wherein the organocopper reagent source comprises a Cu(hfac)TMVS source.16. The apparatus of claim 10, further comprising thermal means including (i) a heated flow path portion upstream of said pump, and (ii) a cold trap downstream of the pump.17. The apparatus of claim 16, further comprising means for detecting the endpoint of sorption in the sorbent bed.18. The apparatus of claim 10, wherein the sorbent bed comprises sorbent selected from the group consisting of carbon, carbon impregnated with oxidizer, inorganic material impregnated with oxidizer, metal oxides, organic polymers, alumina, molecular sieve, silica gel, hydrophobic zeolites, hydrophilic zeolites, and potassium permanganate.19. The apparatus of claim 10, wherein the sorbent bed comprises sorbent selected from the group consisting of carbon impregnated with permanganate, carbon having metal oxide therein, permanganate, and Cu2O.20. The apparatus of claim 10, wherein the organocopper reagent source in said semiconductor manufacturing facility comprises a reservoir containing organocopper reagent in a liquid-phase precursor form, and said semiconductor manufacturing facility further comprises a vaporizer unit arranged to receive liquid-phase precursor from the reservoir and vaporize liquid-phase precursor to form precursor vapor, with the CVD reactor being arranged to receive said precursor vapor from the vaporizer unit.