Semiconductor device and manufacturing method thereof
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/302
H01L-021/461
출원번호
US-0329405
(2002-12-27)
우선권정보
JP-0124924 (1999-04-30); JP-0206961 (1999-07-22)
발명자
/ 주소
Yamazaki, Shunpei
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson Eric J.
인용정보
피인용 횟수 :
47인용 특허 :
29
초록▼
A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhancement the tolerance for hot carrier injection. LDD regions 217-220 provided in an n-channel TF
A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhancement the tolerance for hot carrier injection. LDD regions 217-220 provided in an n-channel TFT (pixel TFT) 304 forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.
대표청구항▼
1. A method of manufacturing a semiconductor device comprising:forming a semiconductor film over a substrate;etching the semiconductor film into a semiconductor layer;forming a gate insulating film on the semiconductor layer;forming a conductive film on the gate insulating film; andetching the condu
1. A method of manufacturing a semiconductor device comprising:forming a semiconductor film over a substrate;etching the semiconductor film into a semiconductor layer;forming a gate insulating film on the semiconductor layer;forming a conductive film on the gate insulating film; andetching the conductive film so as to form a gate electrode by an inductively coupled plasma etching systems,wherein the gate electrode has an uoner surface, a side surface and a lower surface which is in contact with the gate insulating film, andwherein the lower surface is larger than the upper surface. 2. A method of manufacturing a semiconductor device according to claim 1, wherein the gate electrode comprises at least one selected from the group consisting of tantalum, chromium, tungsten, and silicon having conductivity. 3. A method of manufacturing a semiconductor device according to claim 1, wherein a taper angle of the gate electrode is between 3 and 40°. 4. A method of manufacturing a semiconductor device according to claim 1, wherein the step of etching the conductive film is conducted in a mixture gas containing fluorine and chlorine. 5. A method of manufacturing a semiconductor device according to claim 4, wherein the gas containing fluorine is one selected from the group consisting of CF 4 , C 2 F 6 and C 4 F 8 . 6. A method of manufacturing a semiconductor device according to claim 4, wherein the gas containing chlorine is one selected from the group consisting of Cl 2 , SiCl 4 , and BCl 3 . 7. A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is at least one of a liquid crystal display device and an EL display device. 8. A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a goggle type display, an image reproduction device, and a projector. 9. A method of manufacturing a semiconductor device comprising:forming a semiconductor film over a substrate;etching the semiconductor film into a semiconductor layer;forming a gate insulating film on the semiconductor layer;forming a conductive film on the gate insulating film;etching the conductive film so as to form a gate electrode by an inductively coupled plasma etching system; andintroducing an impurity element into the semiconductor layer so as to form a pair of impurity regions with a channel region interposed therebetween,wherein the pate electrode has an upper surface, a side surface and a lower surface which is in contact with the gate insulating film, andwherein the lower surface is larger than the upper surface. 10. A method of manufacturing a semiconductor device according to claim 9, wherein the gate electrode comprises at least one selected from the group consisting of tantalum, chromium, tungsten, and silicon having conductivity. 11. A method of manufacturing a semiconductor device according to claim 9, wherein a taper angle of the gate electrode is between 3 and 40°. 12. A method of manufacturing a semiconductor device according to claim 9, wherein the step of etching the conductive film is conducted in a mixture gas containing fluorine and chlorine. 13. A method of manufacturing a semiconductor device according to claim 12, wherein the gas containing fluorine is one selected from the group consisting of CF 4 , C 2 F 6 and C 4 F 8 . 14. A method of manufacturing a semiconductor device according to claim 12, wherein the gas containing chlorine is one selected from the group consisting of Cl 2 , SiCl 4 , and BCl 3 . 15. A method of manufacturing a semiconductor device according to claim 9, wherein the impurity element comprises phosphorus. 16. A method of manufacturing a semiconductor device according to claim 9, wherein a portion of the pair of impurity regions overlaps the gate electrode. 17. A method of manufacturing a semiconductor device according to claim 9 , wherein the semiconductor device is at least one of a liquid crystal display device and an EL display device. 18. A method of manufacturing a semiconductor device according to claim 9, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a goggle type display, an image reproduction device, and a projector. 19. A method of manufacturing a semiconductor device comprising:forming a semiconductor film over a substrate;etching the semiconductor film into a semiconductor layer;forming a gate insulating film on the semiconductor layer;forming a conductive film on the gate insulating film;etching the conductive film so as to form a gate electrode having a tapered cross section by an inductively coupled plasma etching system; andintroducing an impurity element into the semiconductor layer so as to form a pair of impurity regions with a channel region interposed therebetween,wherein a concentration of the impurity element contained in a portion of the pair of impurity regions becomes higher as a distance from the channel region increases. 20. A method of manufacturing a semiconductor device according to claim 19, wherein the gate electrode comprises at least one selected from the group consisting of tantalum, chromium, tungsten, and silicon having conductivity. 21. A method of manufacturing a semiconductor device according to claim 19, wherein a taper angle of the gate electrode is between 3 and 40°. 22. A method of manufacturing a semiconductor device according to claim 19, wherein the step of etching the conductive film is conducted in a mixture gas containing fluorine and chlorine. 23. A method of manufacturing a semiconductor device according to claim 22, wherein the gas containing fluorine is one selected from the group consisting of CF 4 , C 2 F 6 and C 4 F 8 . 24. A method of manufacturing a semiconductor device according to claim 22, wherein the gas containing chlorine is one selected from the group consisting of Cl 2 , SiCl 4 , and BCl 3 . 25. A method of manufacturing a semiconductor device according to claim 19, wherein the impurity element comprises phosphorus. 26. A method of manufacturing a semiconductor device according to claim 19, wherein the portion of the pair of impurity regions overlaps the gate electrode. 27. A method of manufacturing a semiconductor device according to claim 19, wherein the semiconductor device is at least one of a liquid crystal display device and an EL display device. 28. A method of manufacturing a semiconductor device according to claim 19, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a goggle type display, an image reproduction device, and a projector. 29. A method of manufacturing a semiconductor device comprising:forming a semiconductor film over a substrate;etching the semiconductor film into a semiconductor layer;forming a gate insulating film on the semiconductor layer;forming a conductive film on the gate insulating film;etching the conductive film so as to form a gate electrode by an inductively coupled plasma etching system;introducing an impurity element into the semiconductor layer so as to form a pair of impurity regions with a channel region interposed therebetween;etching the gate insulating film using the gate electrode as a masks,wherein the gate electrode has an upper surface, a side surface and a lower surface which is in contact with the gate insulating film, andwherein the lower surface is larger than the upper surface. 30. A method of manufacturing a semiconductor device according to claim 29, wherein the gate electrode comprises at least one selected from the group consisting of tantalum, chromium, tungsten, and silicon having conductivity. 31. A method of manufacturing a semiconductor device according to claim 29, wherein a taper angle of the gate electrode is between 3 and 40°. 32. A method of manufactu ring a semiconductor device according to claim 29, wherein the step of etching the conductive film is conducted in a mixture gas containing fluorine and chlorine. 33. A method of manufacturing a semiconductor device according to claim 32, wherein the gas containing fluorine is one selected from the group consisting of CF 4 , C 2 F 6 and C 4 F 8 . 34. A method of manufacturing a semiconductor device according to claim 32, wherein the gas containing chlorine is one selected from the group consisting of Cl 2 , SiCl 4 , and BCl 3 . 35. A method of manufacturing a semiconductor device according to claim 29, wherein the impurity element comprises phosphorus. 36. A method of manufacturing a semiconductor device according to claim 29, wherein a portion of the pair of impurity regions overlaps the gate electrode. 37. A method of manufacturing a semiconductor device according to claim 29, wherein the semiconductor device is at least one of a liquid crystal display device and an EL display device. 38. A method of manufacturing a semiconductor device according to claim 29, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a goggle type display, an image reproduction device, and a projector. 39. A method of manufacturing a semiconductor device comprising:forming a semiconductor film over a substrate;etching the semiconductor film into a semiconductor layer;forming a gate insulating film on the semiconductor layer;forming a conductive film on the gate insulating film;etching the conductive film so as to form a gate electrode having a tapered cross section by an inductively coupled plasma etching system;introducing an impurity element into the semiconductor layer so as to form a pair of impurity regions with a channel region interposed therebetween; andetching the gate insulating film using the gate electrode as a mask,wherein a concentration of the impurity element contained in a portion of the pair of impurity regions becomes higher as a distance from the channel region increases. 40. A method of manufacturing a semiconductor device according to claim 39, wherein the gate electrode comprises at least one selected from the group consisting of tantalum, chromium, tungsten, and silicon having conductivity. 41. A method of manufacturing a semiconductor device according to claim 39, wherein a taper angle of the gate electrode is between 3 and 40°. 42. A method of manufacturing a semiconductor device according to claim 39, wherein the step of etching the conductive film is conducted in a mixture gas containing fluorine and chlorine. 43. A method of manufacturing a semiconductor device according to claim 42, wherein the gas containing fluorine is one selected from the group consisting of CF 4 , C 2 F 6 and C 4 F 8 . 44. A method of manufacturing a semiconductor device according to claim 42, wherein the gas containing chlorine is one selected from the group consisting of Cl 2 , SiCl 4 , and BCl 3 . 45. A method of manufacturing a semiconductor device according to claim 39, wherein the impurity element comprises phosphorus. 46. A method of manufacturing a semiconductor device according to claim 39, wherein the portion of the pair of impurity regions overlaps the gate electrode. 47. A method of manufacturing a semiconductor device according to claim 39, wherein the semiconductor device is at least one of a liquid crystal display device and an EL display device. 48. A method of manufacturing a semiconductor device according to claim 39, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a goggle type display, an image reproduction device, and a projector.
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