초록 ▼

A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer

A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

대표청구항 ▼

1. A method of micro-casting a silicon carbide nano-imprinting stamp, comprising:forming a release layer on a substrate layer;forming a mold layer on the release layer;patterning and then etching the mold layer to form a plurality of nano-sized mold cavities therein that extend to the release layer;

1. A method of micro-casting a silicon carbide nano-imprinting stamp, comprising:forming a release layer on a substrate layer;forming a mold layer on the release layer;patterning and then etching the mold layer to form a plurality of nano-sized mold cavities therein that extend to the release layer;forming a plurality of nano-sized features and a foundation layer connected therewith by filling in the nano-sized mold cavities with a material comprising silicon carbide;planarizing the foundation layer to form a substantially planar surface;forming a glue layer on the planar surface of the foundation layer;bonding a handling substrate with the glue layer by applying pressure and heat to the handling substrate and the substrate layer until the glue layer forms a mechanical bond with the foundation layer and the handling substrate;patterning and then etching a backside of the substrate layer to form a plurality of through holes that extend to the release layer;removing the substrate layer by introducing an etchant into the through holes so that the release layer is etched away thereby releasing the substrate layer; andetching the mold layer to remove the mold layer from the nano-sized features and the foundation layer. 2. The method as set forth in claim 1 and further comprising:planarizing the mold layer after forming the mold layer to form a substantially planar surface thereon. 3. A method of micro-casting a silicon carbide nano-imprinting stamp, comprising:forming a mold layer on a substrate layer;patterning and then etching the mold layer to form a plurality of nano-sized mold cavities therein that extend to the substrate layer;forming a plurality of nano-sized features and a foundation layer connected therewith by filling in the nano-sized mold cavities with a material comprising silicon carbide;planarizing the foundation layer to form a substantially planar surface;forming a glue layer on the planar surface of the foundation layer;bonding a handling substrate with the glue layer by applying pressure and heat to the handling substrate and the substrate layer until the glue layer forms a mechanical bond with the foundation layer and the handling substrate;removing the substrate layer from the mold layer; andetching the mold layer to remove the mold layer from the nano-sized features and the foundation layer. 4. The method as set forth in claim 3 and further comprising:planarizing the mold layer after forming the mold layer to form a substantially planar surface thereon. 5. The method as set forth in claim 3, wherein the removing the substrate layer comprises grinding a backside of the substrate layer until the substrate layer is removed from the mold layer. 6. The method as set forth in claim 5, wherein the grinding comprises chemical mechanical planarization. 7. The method as set forth in claim 3, wherein the removing and the etching comprises patterning and then etching a backside of the substrate layer to form a plurality of through holes therein that extend to the mold layer; andintroducing an etchant into the through holes so that the mold layer is etched away thereby releasing the substrate layer. 8. A method of micro-casting a silicon carbide nano-imprinting stamp, comprising:patterning and then etching a mold layer to form a plurality of nano-sized mold cavities therein;forming a plurality of nano-sized features and a foundation layer connected therewith by filling in the nano-sized mold cavities with a material comprising silicon carbide;planarizing the foundation layer to form a substantially planar surface;forming a glue layer on the planar surface of the foundation layer;bonding a handling substrate with the glue layer by applying pressure and heat to the handling substrate and the mold layer until the glue layer forms a mechanical bond with the foundation layer and the handling substrate; andremoving the mold layer from the foundation layer. 9. The method as set forth in claim 8, wherein the removing the mold lay er comprises selectively etching the mold layer thereby releasing the mold layer from the foundation layer.