Heterojunction bipolar transistor and its manufacturing method
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-031/0328
H01L-031/0336
H01L-031/072
H01L-031/109
출원번호
US-0407428
(2003-04-07)
우선권정보
JP-0103370 (2002-04-05)
발명자
/ 주소
Yoshioka, Akira
Nozu, Tetsuro
출원인 / 주소
Kabushiki Kaisha Toshiba
대리인 / 주소
Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보
피인용 횟수 :
6인용 특허 :
3
초록▼
A heterojunction bipolar transistor comprises, an emitter made of a first compound semiconductor of a first conductivity type; a base made of a second compound semiconductor of a second conductivity type and having a bandgap smaller than the first compound semiconductor; and a collector made of a th
A heterojunction bipolar transistor comprises, an emitter made of a first compound semiconductor of a first conductivity type; a base made of a second compound semiconductor of a second conductivity type and having a bandgap smaller than the first compound semiconductor; and a collector made of a third compound semiconductor of a first conductivity type and having a bandgap wider than the second compound semiconductor. The emitter and the base form a heterojunction of type I. The base and the collector form a heterojunction of type II. Further, the base includes impurities by a concentration equal to or more than 5×10 19 cm −3 .
대표청구항▼
1. A heterojunction bipolar transistor comprising,an emitter made of a first compound semiconductor of a first conductivity type;a base made of a second compound semiconductor of a second conductivity type and having a bandgap smaller than the first compound semiconductor; anda collector made of a t
1. A heterojunction bipolar transistor comprising,an emitter made of a first compound semiconductor of a first conductivity type;a base made of a second compound semiconductor of a second conductivity type and having a bandgap smaller than the first compound semiconductor; anda collector made of a third compound semiconductor of a first conductivity type and having a bandgap wider than the second compound semiconductor,the emitter and the base forming a heterojunction of type I,the base and the collector forming a heterojunction of type II, andthe base including impurities by a concentration equal to or more than 5×10 19 cm −3 . 2. A heterojunction bipolar transistor according to claim 1, wherein the first compound semiconductor is In 1−x Ga x P, the second compound semiconductor is GaAs, and the third compound semiconductor is In 1−x Ga x P. 3. A heterojunction bipolar transistor according to claim 1, further comprising a second collector adjoining the collector on an opposite side from the base and made of a fourth compound semiconductor of a first conductivity type,the fourth compound semiconductor having a bandgap wider than the third compound semiconductor. 4. A heterojunction bipolar transistor according to claim 3, wherein the fourth compound semiconductor includes a plurality of kinds of group III elements, andan orderliness of the plurality of kinds of group III elements in the third compound semiconductor is higher than an orderliness of the plurality of kinds of group III elements in the fourth compound semiconductor. 5. A heterojunction bipolar transistor comprising,an emitter made of a first compound semiconductor of a first conductivity type;a base made of a second compound semiconductor of a second conductivity type and having a bandgap smaller than the first compound semiconductor; anda collector made of a third compound semiconductor of a first conductivity type and having a bandgap wider than the second compound semiconductor,each of the first and third compound semiconductors includes a plurality of kinds of group III elements, andan orderliness of the plurality of kinds of group III elements in the third compound semiconductor is higher than an orderliness of the plurality of kinds of group III elements in the first compound semiconductor. 6. A heterojunction bipolar transistor according to claim 5, wherein the emitter and the base forms a heterojunction of type I, andthe base and the collector forms a heterojunction of type II. 7. A heterojunction bipolar transistor according to claim 5, wherein the first compound semiconductor is In 1−x Ga x P, the second compound semiconductor is GaAs, and the third compound semiconductor is In 1−x Ga x P. 8. A heterojunction bipolar transistor according to claim 5, further comprising a second collector adjoining the collector on an opposite side from the base and made of a fourth compound semiconductor of a first conductivity type,the fourth compound semiconductor having a bandgap wider than the third compound semiconductor. 9. A heterojunction bipolar transistor according to claim 8, wherein the fourth compound semiconductor includes a plurality of kinds of group III elements, andan orderliness of the plurality of kinds of group III elements in the third compound semiconductor is higher than an orderliness of the plurality of kinds of group III elements in the fourth compound semiconductor. 10. A heterojunction bipolar transistor comprising,an emitter made of a first compound semiconductor of a first conductivity type;a first base made of a second compound semiconductor of a second conductivity type and having a bandgap smaller than the first compound semiconductor;a second base made of a third compound semiconductor of a second conductivity type and having a bandgap smaller than the first compound semiconductor; anda collector made of a fourth compound semiconductor of a first conductivity type and having a bandgap wi der than the third compound semiconductor,the third compound semiconductor having a composition that differs from a composition of the second compound semiconductor,the emitter and the first base forming a heterojunction of type I, andthe second base and the collector forming a heterojunction of type II. 11. A heterojunction bipolar transistor according to claim 10, wherein the second and the third compound semiconductors have impurity concentrations equal to or higher than 5×10 19 cm −3 . 12. A heterojunction bipolar transistor according to claim 10, wherein the second compound semiconductor is InGaAs, and the third compound semiconductor is GaAsSb. 13. A heterojunction bipolar transistor according to claim 10, wherein the first and the fourth compound semiconductors are InP. 14. A heterojunction bipolar transistor according to claim 3, wherein the fourth compound semiconductor includes a plurality of kinds of group III elements, andan orderliness of the plurality of kinds of group III elements in the third compound semiconductor is higher than an orderliness of the plurality of kinds of group III elements in the fourth compound semiconductor.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.