초록 ▼

A method is described for filling of high aspect ratio contact vias provided over silicon containing areas. A via is formed in an insulating layer over the silicon containing area and a silicide forming material is deposited in the via. A silicide region is formed over the silicon containing area, t

A method is described for filling of high aspect ratio contact vias provided over silicon containing areas. A via is formed in an insulating layer over the silicon containing area and a silicide forming material is deposited in the via. A silicide region is formed over the silicon containing area, the silicide forming material is removed from the via leaving the silicide region. The via is then filled with a conductor using an electroless plating process.

대표청구항 ▼

1. A semiconductor contact structure comprising:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;an activated silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated

1. A semiconductor contact structure comprising:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;an activated silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer. 2. A semiconductor contact structure comprising:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a titanium silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said titanium silicide layer. 3. A semiconductor contact structure comprising:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a tungsten silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said tungsten silicide layer. 4. The contact structure of claim 1 wherein said silicide layer comprises cobalt suicide. 5. The contact structure of claim 1 wherein said silicide layer comprises nickel silicide. 6. The contact structure of claim 1 wherein said electrolessly plated conductor comprises a conductor containing nickel. 7. A semiconductor contact structure comprising:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer, wherein said electrolessly plated conductor comprises a conductor containing nickel and phosphorous. 8. The contact structure of claim 7, wherein said electrolessly plated conductor comprises a conductor containing nickel, tungsten, and phosphorous. 9. The contact structure of claim 1 wherein said electrolessly plated conductor comprises a conductor containing cobalt. 10. A semiconductor contact structure comprising:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer, wherein said electrolessly plated conductor comprises a conductor containing cobalt and phosphorous. 11. The contact structure of claim 10 wherein said electrolessly plated conductor comprises a conductor containing cobalt, tungsten, and phosphorous. 12. The contact structure of claim 10 wherein said electrolessly plated conductor comprises a conductor containing nickel, cobalt and phosphorous. 13. The contact structure of claim 1 wherein said area containing silicon comprises an area of polysilicon. 14. A semiconductor contact structure comprising:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer, wherein said electrolessly plated conductor comprises a conductor containing tungsten. 15. A semiconductor contact structure comprising:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer, wherein said electrolessly plated conductor comprises a conductor containing titanium. 16. A semiconductor contact structure comprising:an insulating layer provided over a semiconductor substrate;an opening in sa id insulating layer to an area containing silicon;a silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer, wherein said electrolessly plated conductor comprises a conductor containing tantalum. 17. A processing system comprising:a processor; andat least one memory device coupled to said processor for data exchange, at least one of said processor and memory device having a contact structure which comprises:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;an activated silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer. 18. A processing system comprising:a processor; andat least one memory device coupled to said processor for data exchange, at least one of said processor and memory device having a contact structure which comprises:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a titanium silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said titanium silicide layer. 19. A processing system comprising:a processor; andat least one memory device coupled to said processor for data exchange, at least one of said processor and memory device having a contact structure which comprises:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a tungsten silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said tungsten silicide layer. 20. The processing system of claim 17 wherein said silicide layer comprises cobalt silicide. 21. The processing system of claim 17 wherein said silicide layer comprises nickel silicide. 22. The processing system of claim 17 wherein said electrolessly plated conductor comprises a conductor containing nickel. 23. A processing system comprising:a processor; andat least one memory device coupled to said processor for data exchange, at least one of said processor and memory device having a contact structure which comprises:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer, wherein said electrolessly plated conductor comprises a conductor containing nickel and phosphorous. 24. The processing system of claim 23 wherein said electrolessly plated conductor comprises a conductor containing nickel, tungsten, and phosphorous. 25. The processing system of claim 17 wherein said electrolessly plated conductor comprises a conductor containing cobalt. 26. A processing system comprising:a processor; andat least one memory device coupled to said processor for data exchange, at least one of said processor and memory device having a contact structure which comprises:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer, wherein said electrolessly plated conductor comprises a conductor containing cobalt and phosphorous. 27. The processing system of claim 26 wherein said electrolessly plated conductor comprises a conductor containing cobalt, tungsten, and phosphorous. 28. The processing system of claim 26, wherein said electrolessly plated conductor comprises a conducto r containing nickel, cobalt and phosphorous. 29. The processing system of claim 17 wherein said area containing silicon comprises an area of polysilicon. 30. A processing system comprising:a processor; andat least one memory device coupled to said processor for data exchange, at least one of said processor and memory device having a contact structure which comprises:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer, wherein said electrolessly plated conductor comprises a conductor containing tungsten. 31. A processing system comprising:a processor; andat least one memory device coupled to said processor for data exchange, at least one of said processor and memory device having a contact structure which comprises:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer, wherein said electrolessly plated conductor comprises a conductor containing titanium. 32. A processing system comprising:a processor; andat least one memory device coupled to said processor for data exchange, at least one of said processor and memory device having a contact structure which comprises:an insulating layer provided over a semiconductor substrate;an opening in said insulating layer to an area containing silicon;a silicide layer formed at the bottom of said opening over said area containing silicon; andan electrolessly plated conductor formed within said opening over said silicide layer, wherein said electrolessly plated conductor comprises a conductor containing tantalum.