IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0095915
(2002-03-12)
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우선권정보 |
JP-0272788 (1998-09-28); JP-0067744 (1999-03-15); JP-0133283 (1999-05-13) |
발명자
/ 주소 |
|
출원인 / 주소 |
- NEC Electronics Corporation
|
대리인 / 주소 |
Scully, Scott, Murphy & Presser
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
7 |
초록
▼
A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) is irradiated on a surface (or back) of a semiconductor device chip to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces
A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) is irradiated on a surface (or back) of a semiconductor device chip to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces a magnetic field. A magnetic field detector such as SQUID detects a strength of the magnetic field, based on which a scan magnetic field image is produced. A display device superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip. Incidentally, a semiconductor device wafer is constructed to include a thermoelectromotive force generator and its wires, which are electrically connected to first-layer wires. By irradiation of the laser beam on the thermoelectromotive force generator, it is possible to detect a short-circuit defect, which lies between the first-layer wires. Further, it is possible to perform nondestructive inspection on a semiconductor integrated circuit, which is in an intermediate stage of manufacture before formation of bonding pads and which includes a closed circuit configured by a first-layer wire, including a thermoelectromotive force generating defect, a circuit via and an inspection via as well as a metal film, which is formed in a relatively broad range of a surface area and is used to form a second-layer wire.
대표청구항
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1. A nondestructive inspection device comprising:a light source for generating laser light;laser beam generation means for generating a laser beam based on the laser light, so that the laser beam is irradiated on a surface of a semiconductor device chip; andmagnetic field detection means for detecti
1. A nondestructive inspection device comprising:a light source for generating laser light;laser beam generation means for generating a laser beam based on the laser light, so that the laser beam is irradiated on a surface of a semiconductor device chip; andmagnetic field detection means for detecting a strength of a magnetic field which is induced by a thermoelectromotive current, which is caused to occur in the semiconductor device chip in response to irradiation of the laser beam,whereby inspection is performed based on a detection result of the magnetic field detection means as to whether a defect exists in the semiconductor device chip or not in a nondestructive manner. 2. A nondestructive inspection device according to claim 1 further comprising laser beam scanning means which scans the surface of the semiconductor device chip with the laser beam while sequentially changing an irradiated position of the semiconductor device chip. 3. A nondestructive inspection device according to claim 2 further comprising image display means in which every time the laser beam scanning means changes the irradiated position of the laser beam on the semiconductor device chip, the strength of the magnetic field is converted to a luminance value, which is set as luminance at a display position on a screen corresponding to the irradiated position of the semiconductor device chip so as to display a scan magnetic field image. 4. A nondestructive inspection device according to claim 3 further comprisinga scanning laser microscope for producing a scan laser microphotograph with regard to the semiconductor device chip, andcomposite image display means for displaying a composite image consisting of the scan magnetic field image and the scan laser microphotograph, which are overlapped with each other, on the screen. 5. A nondestructive inspection device according to claim 1 wherein the laser beam generation means is arranged to irradiate the laser beam only on a specific semiconductor device chip within a plurality of semiconductor device chips, which are arranged in proximity to each other, on a wafer, and wherein the laser beam generation means adjusts the laser beam such that the laser beam is irradiated on an inspected area of the specific semiconductor device chip as a whole at once. 6. A nondestructive inspection device according to any one of claims 1 to 5 wherein the laser beam has a wavelength which has a capability of transmitting through a silicon substrate and which does not cause an OBIC current to occur. 7. A nondestructive inspection device according to any one of claims 1 to 5 wherein the laser beam has a wavelength which is longer than 1200 nano-meter. 8. A nondestructive inspection device according to any one of claims 1 to 5 wherein the laser beam has a wavelength which is approximately 1300 nano-meter. 9. A nondestructive inspection device according to claim 6 wherein the laser beam generation means is arranged to irradiate the laser beam on a back of the semiconductor device chip while the magnetic field detection means is arranged in a side of the surface of the semiconductor device chip. 10. A nondestructive inspection device according to claim 1 further comprising at least one current circuit, one end of which is electrically connected to a predetermined position of the semiconductor device chip, so that the magnetic field detection means is arranged in proximity to the current circuit. 11. A nondestructive inspection device according to claim 1 further comprising a plurality of current circuits, each end of which is electrically connected to a predetermined position of the semiconductor device chip, and wherein specific parts of the current circuits are arranged in proximity to each other mutually, so that the magnetic field detection means is arranged in proximity to the specific parts. 12. A nondestructive inspection device according to claim 1 further comprising at least one current circuit, one end of which is electrica lly connected to a predetermined position of the semiconductor device chip and another end of which is electrically connected to a position of the semiconductor device chip which differs from the predetermined position, so that the magnetic field detection means is arranged in proximity to the current circuit. 13. A nondestructive inspection device according to claim 1 further comprising a plurality of current circuits each having two ends, which are electrically connected to different positions of the semiconductor device chip, wherein the plurality of current circuits are connected to a common connection point, so that the magnetic field detection means is arranged in proximity to the common connection point. 14. A nondestructive inspection device according to claim 10 or 12 wherein the predetermined position of the semiconductor device chip corresponds to a bonding pad. 15. A nondestructive inspection device according to claim 1 wherein the magnetic field detection means is configured by a SQUID (Superconducting Quantum Interference Device). 16. A nondestructive inspection device according to claim 15 wherein the SQUID contains three components for magnetic detection, which arc directed in three independent directions respectively. 17. A nondestructive inspection device for performing nondestructive inspection on a semiconductor device which contains first and second conductors being arranged in proximity to each other on a substrate and in which one end of a thermoelectromotive force generator formed on the substrate is connected to the first conductor by a first wire while another end of the thermoelectromotive force generator is connected to the second conductor by a second wire, said nondestructive inspection device comprising:laser irradiation means for irradiating laser light on the thermoelectromotive force generator; andmagnetic field detection means for detecting a magnetic field which is induced when the laser light is irradiated on the thermoelectromotive force generator. 18. A nondestructive inspection device according to claim 17 wherein the laser light is subjected to convergence to produce a laser beam, which is irradiated on the thermoelectromotive force generator. 19. A nondestructive inspection device according to claim 18 further comprising:scanning means for moving an irradiated position at which the laser beam is irradiated on the substrate of the semiconductor device; andimage producing means for establishing a positional correspondence between the irradiated position and a display position on a screen of a display device and for producing and displaying a scan magnetic field image based on the detected magnetic field, whose strength is represented by brightness or color, on the screen of the display device. 20. A nondestructive inspection device according to claim 19 wherein the scanning means operates such that the substrate is fixed while the laser beam is moved. 21. A nondestructive inspection device according to claim 19 wherein the scanning means operates such that the laser beam is fixed in position while the substrate is moved. 22. A nondestructive inspection device according to claim 19 wherein the image producing means operates such that a scan laser microphotograph is produced with respect to the substrate of the semiconductor device, so that a composite image, consisting of the scan magnetic field image and the scan laser microphotograph which are overlapped with each other, is displayed on the screen of the display device. 23. A nondestructive inspection device according to claim 18 wherein the laser irradiation means operates such that the laser beam having a wavelength which transmits through the substrate but which does not cause an OBIC current to occur is irradiated on the substrate of the semiconductor device. 24. A nondestructive inspection device according to claim 23 wherein the substrate corresponds to a silicon substrate. 25. A nondestructive inspection device according to claim 17 wherein the laser irradiation means operates such that the laser light is irradiated on a back of the substrate of the semiconductor device while the magnetic field detection means detects the magnetic field in proximity to a surface of the semiconductor device. 26. A nondestructive inspection device according to claim 17 wherein the magnetic field detection means is configured by a SQUID.
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