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Sealing porous structures

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/4763
출원번호 US-0303293 (2002-11-22)
발명자 / 주소
  • Raaijmakers, Ivo
  • Soininen, Pekka T.
  • Granneman, Ernst
  • Haukka, Suvi
  • Elers, Kai-Erik
  • Tuominen, Marko
  • Sprey, Hessel
  • Terhorst, Herbert
  • Hendriks, Menso
출원인 / 주소
  • ASM Microchemistry Oy
대리인 / 주소
    Knobbe, Martens, Olson & Bear, LLP
인용정보 피인용 횟수 : 67  인용 특허 : 23

초록

Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then t

대표청구항

1. A method of fabricating an integrated circuit including a porous insulating layer having a plurality of trenches extending from an upper surface of the insulating layer, the method comprising:blocking the pores on an exposed surface of the insulating layer, wherein blocking is performed preferent

이 특허에 인용된 특허 (23)

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  4. Roger Leung ; Denis Endisch ; Songyuan Xie ; Nigel Hacker ; Yanpei Deng, Dielectric films for narrow gap-fill applications.
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  10. Posa John G. (Lake Oswego OR), Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition.
  11. Suntola Tuomo,FIX ; Lindfors Sven,FIX ; Soininen Pekka,FIX, Method and equipment for growing thin films.
  12. Alessandra Satta BE; Karen Maex BE; Kai-Erik Elers FI; Ville Antero Saanila FI; Pekka Juha Soininen FI; Suvi P. Haukka FI, Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
  13. Kelly Michael A. (121 Erica Way Portola Valley CA 94028), Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its.
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  29. Byun, Jeong Soo, Methods for depositing tungsten after surface treatment.
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